• 제목/요약/키워드: surface superconductivity

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Bi-2223/Ag 초전도 선재에서 임계전류와 인덱스의 자계의존성 (Magnetic field dependence of critical current and index n in a Bi-2223/Ag superconductor tape)

  • 김정호;김규태;임준형;장석헌;노연봉;주진호;최세용;나완수;홍계원
    • Progress in Superconductivity
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    • 제6권1호
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    • pp.79-83
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    • 2004
  • We fabricated Bi-2223/Ag superconductor tape with 55 filaments and estimated the magnetic field dependence of critical current (I$_{c}$) and index n (n) up to 30 T at 4.2 K. The I$_{c}$ and n were characterized as a function of external magnetic field parallel to the tape surface on increasing and decreasing field, using a 35 T hybrid magnet. The $I_{c}$ was estimated to be 325 A, and n was 32, 22, and 26 in the electric field range of $0.1 ∼1\mu$V/cm, 1∼10 $\mu$V/cm, and 0.1∼10 $\mu$V/cm, respectively, under self-field at 4.2 K. It was observed that $I_{c}$ was dependent on magnitude of magnetic field and it decreased exponentially as the field increased; in a parallel and increasing field, It was 128 A at 30 T which is approximately 40% of critical current in self-field. In addition, the $I_{c}$ was higher on decreasing field than that on increasing one. On the other hand, n did not significantly depend on field strength up to 30 T, nor varied on whether increasing or decreasing field; n value in 0.1∼1 $\mu$V/cm was 23.0$\pm$5.2 and 27.8$\pm$8.0 on increasing and decreasing field, respectively. The n value on decreasing magnetic field was slightly higher than that on increasing field. This hysteretic behavior of n was similar to that of$ I_{c}$, which is related to the trapped flux at the grain boundary.ary.

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c-axis Tunneling in Intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ Single Crystals

  • Lee, Min-Hyea;Chang, Hyun-Sik;Doh, Yong-Joo;Lee, Hu-Jong;Lee, Woo;Choy, Jin-Ho
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.260-260
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    • 1999
  • We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

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고온초전도 박막이 설치된 유전체부하 공진기의 주파수 조절 가능한 High-Q 공진기 제작 및 대면적 고온초전도 박막의 특성평가에의 응용 (Application of Dielectric-loaded Cavity Resonators with HTS Endplates for Tunable High-Q Resonators and Characterization Tools for Large HTS Films)

  • 권형준;박종운;강훈;허정;이상영
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.75-82
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    • 1999
  • TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.

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PLD법으로 제작한 YBa$_{2}$Cu$_{3}$O$_{7}$ 반막의 표면상태 변화 (Surface morphology of YBa$_{2}$Cu$_{3}$O$_{7}$ thin films prepared by the PLD method)

  • 한기열;황태종;유성초;이규원;하동한
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.66-69
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    • 2000
  • 본 연구에서는 STO(100) 기판 위에 PLD법으로 YBCO 박막을 제작할 때, YBCO 상과 outgrowth의 형성과정과 구조 등을 관찰하였다. 증착의 각 과정별로 박막의 표면 및 단면을 AFM과 SEM으로 관찰한 결과, YBCO 상은 작은 씨앗에서부터 계속 성장해 가며, YBCO 상은 구조를 약 한층 정도 형성하는 불과 10 ${AA}$ 정도만 증착되어도 YBCO의 XRD 피크를 보인다. 반면에 생성되며, YBCO처럼 작은 씨앗에서 서서히 성장해 가는 것은 아니라고 생각된다.

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CeO$_2$ 완충층에 대한 고온 열처리가 CeO$_2$ 완충층을 지닌 R-cut 사파이어 기판 우에 성장된 YBa$_2Cu_3O_{7-{\delta}}$ 박막의 표면상태에 미치는 영향 (Effects of High-temperature Annealing of CeO$_2$ Buffer Layers on the Surface Morphology of YBa$_2Cu_3O_{7-{\delta}}$ Films on CeO$_2$-buffered R-cut Sapphire Substrates)

  • 이재훈;양우일;장정문;류재수;;이상영
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.152-159
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    • 1999
  • YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.

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