• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.93-93
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.11
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• pp.1090-1099
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• 2004

In this paper a novel design of equilateral-triangular microstrip antenna using PIN diode fur switching the resonant frequency is presented and experimentally studied. The proposed antenna has changed the resonant frequency by length of spur-lines on the patch, and PIN diodes are utilized to switch the spur-line on and off. The shape of the spur-line is changed according to the on and off states of PIN diode and the equilateral triangular microstrip antenna has different resonant frequencies in accordance with them. The resonant frequency is 1.22 GHz with off states since the surface currents flow the periphery of T shape spur-lines, while the resonant frequency is 1.82 GHz with on states since the surface currents are little effect with the conventional equilateral triangular microstrip antenna. The radiation pattern of the proposed antenna has a good linear polarization with the cross polarization of -20 dB both with on and off states.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.156-156
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• 2017

In this work, analysis of biocompatible TiO2 oxide multilayer by the XPS depth profiling was researched. the manufacture of the TiO2 barrier-type multilayer was accurately performed in a mixed electrolyte containing HAp, Pd, and Ag nanoparticles. The temperature of the solution was kept at approximatively $32^{\circ}C$ and was regularly rotated by a magnetic stirring rod in order to increase the ionic diffusion rate. The manufactured specimens were carefully analyzed by XPS depth profile to investigate the result of chemical bonding behaviors. From the analysis of chemical states of the TiO2 oxide multilayer using XPS, the peaks are showed with the typical signal of Ti oxide at 459.1 eV and 464.8 eV, due to Ti 2p(3/2) and Ti 2p(1/2), respectively. The Pd-3d peak was split into Pd-3d(5/2) and Pd-3d(3/2)peaks, and shows two bands at 334.7 and 339.9 eV for Pd-3d3 and Pd-3d5, respectively. Also, the peaks of Ag-3d have been investigated. The chemical states consisted of the O-1s, P-2p, and Ti-2p were identified in the forms of PO42- and PO43-. Based on the results of the chemical states, the chemical elements into the TiO2 oxide multilayer were also inferred to be penetrated from the electrolyte during anodic process.The structure characterization of the modified surface were performed by using FE-SEM, and from the result of biological evaluation in simulated body fluid(SBF), the biocompatibility of TiO2 oxide multilayer was effective for bioactive property.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.94-98
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• 2004

The electronic structures and magnetism of MgCCo$_3$(001) surface terminated by the plane with the MgCo-Term (Mg, Co terminated) and the CCo-Term (C, Co terminated) were investigated using the all-electron full-potential linearized augmented Plane-wave method. For the MgCo-Term, the magnetic moment of Co atom of the surface is strongly enhanced to 1.00$\mu$$_{B}$, while the magnetic moment of Co atom of the subsurface is similar to that of the center layers. For the CCo-Term, the magnetic moments of Co atoms are enhanced to 0.75 and 0.80$\mu$$_{B}$ for the surface and subsurface layers, respectively. The magnetic moments of C and Mg atoms are coupled antiferromagnetically to that of the neighbour Co atoms. From the calculated density of states, we see that the enhancements of magnetic moments of Co atoms are closely related to localization of the Co-3d states.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2009.04a
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• pp.34-37
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• 2009

본 논문에서는 원자적 계산(atomistic calculation)을 이용한 나노박막의 평형상태(self-equilibrium state)에 대한 해석기법을 제시한다. 두께가 얇은 나노박막은 표면 응력(surface stress)에 의한 영향으로 원자간 거리가 벌크상태의 거리보다 작아진다. 두께가 얇은 나노박막에서의 원자 사이의 거리는 표면 응력과 탄성계수들의 표현식으로 계산이 가능하며, 본 논문에서는 {100}, {111}, {110} 표면을 가지는 나노박막의 평형상태의 해석을 위한 해석적 방법을 제시한다. 원자 사이의 거리를 계산하기 위해서는 보다 정확한 표면 응력의 계산방법이 필요하다. 본 연구에서는 나노박막의 평형상태에 대한 해석을 위해 surface relaxation model을 제시하고, 이 모델을 이용하여 표면응력(surface stress)과 표면강성계수(surface stiffness tensor)와 같은 surface parameter의 계산을 수행한다. 본 논문에서 제시된 surface relaxation model을 검증하기 위하여 분자동역학 전산모사(molecular dynamics simulation)의 수치 결과를 제시하고, 본 연구에서 계산한 equilibrium strain과 비교 검증한다.

• Proceedings of the Korea Concrete Institute Conference
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• 2004.05a
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• pp.738-741
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• 2004

This study is concerning on modeling to predict the flexural behaviors of FRP-confined concrete structural members. For compressive behaviors of confined concrete by FRP jackets, the hypoelasticity-based constitutive law of concrete has been presented under the basis of three-dimensional stress states. The strength enhancement of concrete wrapped by FRP jackets has been determined by the failure surface of concrete in tri-axial states, and its corresponding peak strain is computed by the strain enhancement factor. The behavior of FRP jackets has been modeled using the mechanics of orthotropic laminated composite materials in two-dimensional stress states. To be based on the three-dimensional constitutive laws, an algorithm for the prediction of flexural bending behaviors of FRP-confined concrete structural member has been presented.

• Proceedings of the KIEE Conference
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• 2004.07d
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• pp.2236-2238
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• 2004

This paper proposes the self-recurrent wavelet neural network (SRWNN) observer based sliding mode control (SMC) method for nonlinear systems. Unlike the classical SMC, we assume that all states of nonlinear systems are not measured and design the SRWNN observer to measure the states of nonlinear systems. The SRWNN in the observer is used for approximating the observer system's gain. To generate the control input for controlling the nonlinear system, the measured states are used. The sliding surface with a boundary layer is defined to remove the chattering of the control input. Simulation result to show the effectiveness of the SRWNN observer is presented.

• ETRI Journal
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• v.45 no.2
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• pp.304-317
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• 2023

With the rapid evolution of quantum computing, digital quantum simulations are essential for quantum algorithm verification, quantum error analysis, and new quantum applications. However, the exponential increase in memory overhead and operation time is challenging issues that have not been solved for years. We propose a novel approach that provides more qubits and faster quantum operations with smaller memory than before. Our method selectively tracks realized quantum states using a reduced quantum state representation scheme instead of loading the entire quantum states into memory. This method dramatically reduces memory space ensuring fast quantum computations without compromising the global quantum states. Furthermore, our empirical evaluation reveals that our proposed idea outperforms traditional methods for various algorithms. We verified that the Grover algorithm supports up to 55 qubits and the surface code algorithm supports up to 85 qubits in 512 GB memory on a single computational node, which is against the previous studies that support only between 35 qubits and 49 qubits.