• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2497-2502
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• 2014

The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Journal of the Society of Disaster Information
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• v.17 no.2
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• pp.195-205
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• 2021

Purpose: The ultraviolet reflectance and transmittance of coastal building materials are one of the important factors of ultraviolet radiation in and out of coastal building. In this research, the ultraviolet spectral reflectance of many kinds of building materials was measured. Also, the relationships with the lightness, roughness, and chromaticity, which are surface characteristics, were reviewed and suggested. Method: In this study, according to the CIE classification, the ultraviolet region was defined as short-wavelength region UV-C(10nm~280nm), medium-wavelength region UV-B (280-315 nm), and long-wavelength region UV-A (315-400nm), and the visible light region was defined as (400nm~780nm). Spectrophotometer was used to continuously measure the reflectance from the ultraviolet region to the visible light region. Results: From the measurement results, the ultraviolet reflectance on Wood was shown to be about Visible 55-68%, UV-A^* 7-12%, and UV-B 4-5%. Wall tiles are about Visible18-40%, UV-A^* 8-20%, and UV-B^* 7-8%. That on concrete was shown to be about Visible 37%, UV-A^* 28%, and UV-B^*19%. Conclusion: The ultraviolet reflectance can be estimated by visible reflectance. Also, it is important to select a variety of materials according to the application when blocking UV.

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.190-198
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• 2013

Purpose: The purposes of this study were to investigate osseointegration around zirconia implants which had machined or alumina sandblasted surface, and to compare the results with titanium implants. Materials and methods: The study was performed on the tibia of 6 pigs. Three types of implants were investigated: group T-titanium implant, group Z-machined zirconia implant, group ZS-alumina sandblasting treated zirconia implant. Zirconia implants were manufactured from yttria-stabilized tetragonal zirconia polycrystalline (Acucera Inc., Pocheon, Korea). A total of 36 implants were installed in pigs' tibias. After 1, 4 and 12 weeks of healing period, the periotest and the histomorphometric analysis were performed. The data were analyzed using one-way ANOVA and significance was assessed by the Scheffe test (${\alpha}=.05$). Results: In the measurement of surface roughness, highest Ra value was measured in group T with significant difference. No significant differences were found among groups regarding Periotest values. After 1 week, in comparison of bone to implant contact (BIC), group Z showed higher value with significant difference. In comparison of bone area (BA), group T and group Z showed higher value with significant difference than group ZS. After 4 weeks, in comparison of BIC, group T showed higher value with significant difference. Comparison of BA showed no significant difference among each implant. After 12 weeks, the highest mean BIC values were found in group T with significant difference. Group ZS showed higher BIC value with significant difference than group Z. In comparison of BA, group T and group ZS showed higher value with significant difference than group Z. Conclusion: Zirconia implant showed low levels of osseointegration in this experiment. Modification of surface structure should be taken into consideration in designing zirconia implants to improve the success rate.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.