• 한국결정성장학회지
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• 제30권6호
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• pp.251-257
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• 2020

디스플레이용 유리를 통해 문자나 이미지를 뚜렷하고 빠르게 인식하기 위해서는 유리의 눈부심 현상(glare)을 억제해야 한다. 본 연구 연구에서는 에칭공정을 통해 유리 표면 형상 및 광학 특성 변화를 분석하여 눈부심 현상을 낮추고자 하였다. 에칭 공정은 에칭 용액인 BOE 및 HF의 농도를 변수로 수행하였다. 에칭과정에서 유리 표면에 F 이온이 포함된 화합물이 생성되어 돌기(projection) 형태로 불규칙한 패턴을 형성되었고, 이로 인해 유리의 광학적 특성이 변화되었다; 반사율은 2.5~4.6 %, 탁도는 4.5~6.6 %, 투과율은 77~9 2 %, 그리고 광택도는 82~107 GU 범위. 그 결과 유리의 눈부심 현상을 억제하면서도 다른 광학적 특성의 손실을 최소화하는 에칭 조건을 확보하였다.

• Composites Research
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• 제34권6호
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• pp.387-393
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• 2021

본 논문에서는 습식 식각으로 제작된 구리 전극을 가진 다중벽 탄소나노튜브 PDMS 복합재료 변형율 센서의 전기적 특성을 고찰하였다. MWCNT의 질량분율에 따라 MWCNT-PDMS 변형율 센서를 제작한 후, 전극 부착 표면을 습식 식각한 후 은-에폭시 전도성 접착제를 이용하여 구리 박판을 부착하였다. 2-프로브 방법으로 변형율 센서의 전기 전도성을 측정한 결과, 초기 저항은 MWCNT 함량과 식각 시간에 반비례하였지만 30% 변형율에 대한 저항 변화율은 MWCNT 함량과식각 시간에 비례하였다. 100회 반복 하중 시험 후 저항 변형율 감소는 MWCNT 함량이 증가할수록 식각 시간이 짧아질수록 상대적으로 작게 나타났다. 이는 식각에 의해 MWCNT-PDMS 변형율 센서의 초기 저항 감소에 기인한 것으로 판단된다.

• The Journal of Advanced Prosthodontics
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• 제9권2호
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• pp.104-109
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• 2017

PURPOSE. The purpose of this study was to evaluate the influence of acid etching treatment on surface characteristics and biological response of glass-infiltrated zirconia. MATERIALS AND METHODS. A hundred zirconia specimens were divided into four groups depending on surface treatments: untreated zirconia (group Z); acid-etched zirconia (group ZE); glass-infiltrated zirconia (group ZG); and glass-infiltrated and acid-etched zirconia (group ZGE). Surface roughness, surface topography, surface morphology, and Vickers hardness of specimens were evaluated. For biological response test, MC3T3-E1 cell attachment and proliferation on surface of the specimens were examined. The data were statistically analyzed using one-way ANOVA and Tukey's HSD test at a significance level of 0.05. RESULTS. Group ZGE showed the highest surface roughness ($Ra=1.54{\mu}m$) compared with other groups (P < .05). Meanwhile, the hardness of group Z was significantly higher than those of other groups (P < .05). Cell attachment and cell proliferation were significantly higher in group ZGE (P < .05). CONCLUSION. We concluded that effective surface roughness on zirconia could be made by acid etching treatment after glass infiltration. This surface showed significantly enhanced osteoblast cell response.

• 한국세라믹학회지
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• 제34권10호
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• pp.1021-1026
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• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• 한국표면공학회지
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• 제5권2호
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• pp.1-4
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• 1972

We have studied about the optimum chemical etching and sensitizing conditions of the plating on plastics. As specimen 'Mitzubishi Nobren MM2A' was used. The results were as follow. 1) The optimum chemical etching conditions. Etched the specimens for $10{\sim}40$ minutes at $70{\sim}80^{\circ}C$ with the etching solution of table 1, and for $10{\sim}15$ minutes at $65{\sim}70^{\circ}C$ with the etching solution of table 2 Table 1. Etching solution (I) Composition : $H_2SO_4(95%)-Component : 250 ml, Composition : $H_3PO_4(85%)$ - Component : 75ml, Composition : $K_2Cr_2O_7$ - Component : 12.5g, 2) The optimum sensitizing conditions. Sensitized the specimens for $60{\sim}90$ seconds at $25^{\circ}C$ with the sensitizing solution of table 3 Table 2. Etching solution (II) Composition : $H_2SO_4(95%)$ - Component : 22.5ml, Composition : $H_3PO_4(85%)$ - Component : 15ml, Composition : $CrO_3$ - Component : 105g, Composition : Water - Component : 150 ml, Table 3. Sensitizing solution Composition : $SnCl_2$ - Component : 9g, Composition : HCl(35%) - Component : 36ml, Composition : Water - Component : 300 ml

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1218-1223
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• 2004

Porous silicon materials have been shown to have bright prospects for applications in light emitting, solar cell, as well as light- and chemical-sensing devices. In this report, structures of porous silicon prepared by anodic etching in HF-based solution with various etching times were studied in detail by Atomic Force Microscopy and Small Angle X -ray Scattering technique using the high energy beam line at Pohang Light Source in Korea. The results showed the coexistence of the various pores with nanometer and submicrometer scales. For nanameter size pores, the mixed ones with two different shapes were identified: the larger ones in cylindrical shape and the smaller ones in spherical shape. Volume fractions of the cylindrical and the spherical pores were about equal and remained unchanged at all etching times investigated. On the whole uniform values of the specific surface area and of the size parameters of the pores were observed except for the larger specific surface area for the sample with the short etching time. The results implies that etching process causes the inner surfaces to become smoother while new pores are being generated. In all SAXS data at large Q vectors, Porod slope of -4 was observed, which supports the fact that the pores have smooth surfaces.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.520-527
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• 2006

본 연구에서는 FC(fluorocarbon) 플라즈마 반응기에서 입사하는 이온에너지에 따른 고분자 증착, 식각과 증착의 경쟁반응 및 물리적 스퍼터링 등의 여러 표면 현상들을 모델링하였다. $SiO_2$ 식각에 대한 표면반응은 식각반응 영역을 잘 혼합된 CSTR(continuous stirred tank reactor) 가정을 도입하여 이온 도움에 의한 식각으로 모사되었다. 정상상태 고분자층을 통한 식각과 증착의 경쟁반응의 모델링은 이온 도움에 의한 고분자 생성 및 분해 메커니즘을 제안하여 수행하였다. 이러한 메커니즘은 최근 발표된 실험 및 분자동력학적 전산모사 결과에 기초하였으며,모델 계수들은 빔실험 결과 및 플라즈마 실험결과들을 이용하여 구하였다. 최종 개발된 모델의 결과들은 타당성을 검증하기 위해 문헌에 보고된 실험결과들과 비교하였다.

• 대한치과보철학회지
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• 제29권2호
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• pp.117-127
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• 1991

The purpose of this study was to evaluate the effect of surface treatment of fractured metal-ceramic crown on bond strength of porcelain repair resin. The specimens were divided into two groups for metal specimens add five groups for porcelain specimens by surface treatment methods. the metal specimens were treated by 2 methods. : micro-sandblasting with $50{\mu}m$ aluminum oxide and grinding with diamond bur. The porcelain specimens were treated by 5 methods : micro-sandblasting with $50{\mu}m$ aluminum oxide, grinding with diamond bur, etching with porcelain etching agent, combination of micro-sandblasting and etching procedure, and combination of grinding and etching procedure. After surface treatment, each specimen was bonded with composite resin and the bond strength was measured and the surface texture was observed by scanning electromicroscope(SEM). The results were as follows : 1. There was significant difference in shear bond strength between metal specimen and prorcelain specimen. 2. Bood strength of metal specimens treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting. 3. Bond strength of porcelain specimen treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting and porcelain etching agent. 4. There was no significant difference in shear bond strength between the group treated with diamond bur and combined treatment groups respectively. 5. The large undercuts were observed in group treated with diamond bur by SEM.

• Restorative Dentistry and Endodontics
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• 제18권1호
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• pp.1-26
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• 1993

The purpose of this study was to investigate the effect of acid etching on the surface appearance and fracture toughness of five glass ionomer cements. Five kinds of commercially available glass ionomer cements including chemical curing filling type, chemical curing lining type, chemical curing metal reinforced type, light curing tilling type and light curing lining type were used for this study. The specimens for SEM study were fabricated by treating each glass ionomer cement with either visible light curing or self curing after being inserted into a rubber mold (diameter 4mm, depth 1mm). Some of the specimens were etched with 37% phosphoric acid for 0, 15, 30, 60, go seconds, at 5 minutes, 1 hour and 1 day after mixing of powder and liquid. Unetched ones comprised the control group and the others were the experimental groups. The surface texture was examined by using scanning electron microscope at 20 kV. (S-2300, Hitachi Co., Japan). The specimens for fracture toughness were fabricated by curing of each glass ionomer cement previously inserted into a metal mold for the single edge notch specimen according to the ASTME399. They were subjected to a three-point bend test after etching for 0, 30, 60, and 90 seconds at 5 minutes-, 1 hour-and 1 day-lapse after the fabrication of the specimens. The plane strain fracture toughness ($K_{IC}$) was determined by three-point bend test which was conducted with cross-head speed of 0.5 mm/min using Instron universal testing machine (Model No. 1122) following seven days storage of the etched specimens under $37^{\circ}C$, 100% humidity condition. Following conclusions were drawn. 1. In unetched control group, crack was present, but the surface was generally smooth. 2. Deterioration of the surface appearance such as serious dissolving of gel matrix and loss of glass particles occured as the etching time was increased beyond 15 s following Immediate etching of chemical curing type of glass ionomer cements. 3. Etching after 1 h, and 1 d reduced surface damage, 15 s, and 30s etch gave rough surface appearance without loss of glass particle of chemical curing type of glass ionomer cements. 4. Light curing type glass ionomer cement was etched by acid, but there was no difference in surface appearances according to various waiting periods. 5. It was found that the value of plane stram fracture toughness of glass ionomer cements was highest in the light curing filling type as $1.79\;MNm^{-1.5}$ followed by the light curing lining type, chemical curing metal reinforced type, chemical curing filling type and chemical curing lining type. 6. The value of plane stram fracture toughness of the chemical curing lining type glass ionomer cement etched after 5 minutes was lower than those of the cement etched after 1 hour or day or unetched (P < 0.05). 7. Light curing glass ionomer cement showed Irregular fractured surface and chemical curing cement showed smooth fractured surface.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.