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Surface Reaction Modeling for Plasma Etching of SiO2 Thin Film  

Im, YeonHo (Nanomaterials Research Center and School of Chemical Engineering and Technology, Chonbuk National University)
Publication Information
Korean Chemical Engineering Research / v.44, no.5, 2006 , pp. 520-527 More about this Journal
Abstract
A realistic surface model is presented for prediction of various surface phenomena such as polymer deposition, suppression and sputtering as a function of incidence ion energy in high density fluorocarbon plasmas. This model followed ion enhanced etching model using the "well-mixed" or continuous stirred tank reactor (CSTR) assumption to the surface reaction zone. In this work, we suggested ion enhanced polymer formation and decomposition mechanisms that can capture $SiO_2$ etching through a steady-state polymer film on $SiO_2$ under the suppression regime. These mechanisms were derived based on experimental data and molecular dynamic simulation results from literatures. The model coefficients are obtained from fits to available beam and plasma experimental data. In order to show validity of our model, we compared the model results to high density fluorocarbon plasma etching data.
Keywords
$SiO_2$; Etching; Surface Reaction; High Density Plasma; Modeling;
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