• 제목/요약/키워드: surface etching

검색결과 1,601건 처리시간 0.029초

보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향 (Effect of $Al_2O_3$ pre-layers formed using protective Si-oxide layer on the growth of ultra thin ${\gamma}-Al_2O_3$ epitaxial layer)

  • 정영철;전본근;석전성
    • 센서학회지
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    • 제9권5호
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    • pp.389-395
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    • 2000
  • 본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.

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유기용매상에서 제조된 수소제조용 CdS-TiO2 나노복합 광촉매의 특성 연구 (Photoelectrochemical and Hydrogen Production Characteristics of CdS-TiO2 Nanocomposite Photocatalysts Synthesized in Organic Solvent)

  • 장점석;소원욱;김광제;문상진
    • 한국수소및신에너지학회논문집
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    • 제13권3호
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    • pp.224-232
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    • 2002
  • CdS-$TiO_2$ nano-composite sol was prepared by the sol-gel method in organic solvents at room temperature and further hydrothermal treatment at various temperatures to control the physical properties of the primary particles. Again, CdS-$TiO_2$ composite particulate films were made by casting CdS-$TiO_2$ sols onto $F:SnO_2$ conducting glass and then heat-treatment at $400^{\circ}C$. Physical properties of these 61ms were further controlled by the surface treatment with $TiCl_4$, aqueous solution. The photo currents and hydrogen production rates measured under the experimental conditions varied according to the $CdS/[CdS+TiO_2]$ mole ratio and the mixed-sol preparation method. For $CdS-TiO_2$ composite sols prepared in IPA, CdS particles were homogeneously surrounded by $TiO_2$ particles. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$. It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

도재 수리 시스템의 전단결합강도에 관한 연구 (Shear Bond Strength of Porcelain Repair Systems)

  • 우수;신수연;조인호
    • 구강회복응용과학지
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    • 제22권3호
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    • pp.211-220
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    • 2006
  • Need of porcelain-repair system is largely demanding as dental porcelain restorations are increased in clinical dentistry. This study investigated shear bond strength of commercial porcelain-repair systems on dental porcelain and their reliability. Experimental groups were as follows; Group A Super Bond C&B, Group B Porcelain repair kit, Group C Ceramic repair, and Group D Spectrum system as a control. Porcelain disks were fired and embedded in epoxy resin. Porcelain surface were ground using 220 grit SiC disk, then cleaned in ultrasonic bath. Then porcelain specimens were treated with each repair system. A clear polystyrene cylinder 3.5 mm in internal diameter was filled with composite resin. Then the resin cylinder was polymerized with a visible light curing unit. Thirty one specimens at each group were prepared and stored at $37^{\circ}C$ distilled water for 48 h. Specimens were tested in an Instron testing machine according to ISO TR 11405. Mean shear bond strength and standard deviation of each group was $15.7{\pm}4.1MPa$ (Group A), $12.8{\pm}4.9MPa$ (Group B), $7.2{\pm}3.0MPa$ (Group C) and $9.6{\pm}2.2MPa$ (Group D). ANOVA and Tukey HSD post-hoc test showed that there were significant differences between groups (p<0.05). Data of bond strength were analyzed with two-parameter Weibull distribution. Confidence interval of Weibull modulus (m-parameter) at 95% of Group A (3.5-6.3) and Group D (3.6-6.0) were significantly higher than Group B (2.2-3.7) and Group C (2.0-3.4). There was little correlation between mean shear bond strength and Weibull modulus. Results indicated that acid-etching of porcelain surface increased porcelain-resin shear bonding strength.

공기 중에서 자기장 열처리된 CoFeSiB 비정질 리본에서의 자기 바이어스 효과 (Magnetic Bias Effects in Field-annealed CoFeSiB Amorphous Ribbons)

  • 차용준;정종율;김철기;김동영;윤석수
    • 한국자기학회지
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    • 제19권6호
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    • pp.191-196
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    • 2009
  • 비대칭 거대 자기임피던스 효과를 보이는 자기장 열처리된 CoFeSiB 비정질 리본에서 자기 바이어스 현상을 MOKE 방법을 이용하여 연구하였다. 열처리 과정에서 리본의 양 표면에 형성된 경자성 결정층이 내부 연자성 비정질 상의 자화특성에 미치는 영향을 조사하기 위해 열처리 후 화학적 에칭에 의해 한쪽 및 양쪽 표면의 결정층을 깎아낸 시편들을 준비하고 각 시편에 대해 비정질 상의 자화곡선을 MOKE 방법으로 측정하였다. 열처리 과정에서 표면에 형성된 경자성층이 내부의 비정질 연자성 상에 바이어스 자기장을 작용하고 있다는 것과 바이어스 자기장의 방향이 경자성층의 자화방향에 반대 방향임을 자기이력곡선의 이동을 통해 확인하였다.

Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

복합레진과 Glass Ionomer Cement수복물에 대한 Bracket의 접착전단강도 (THE SHEAR BOND STRENGTH OF TWO ADHESIVES BONDED TO COMPOSITE RESIN AND GLASS IONOMER CEMENT RESTORATIONS)

  • 한재익;이병태
    • 대한치과교정학회지
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    • 제20권3호
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    • pp.583-591
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    • 1990
  • If the bond strength is sufficient to resist orthodontic force, orthodontic brackets can be bonded to restorations. Orthodontic brackets were bonded to composite resin and glass ionomer cement restorations with no-mix adhesive or glass ionomer cement. The shear bond strength of adhesives bonded to restorations was studied in vitro. Orthodontic brackets were bonded to 10 extracted natural teeth, 40 composite resin restorations and 40 glass ionomer restorations. The surfaces of composite resin restorations were roughened or applied with bonding agent (Scothbond) after surface roughening. The surfaces of glass ionomer cement restorations were conditioned with acid etching or applied with Scotchbond to etched surface. The adhesive was no-mix resin or glass ionomer cement. The shear bond strength was measured. The results were as follows: 1. Orthodontic brackets could be bonded to composite resin restorations effectively as they could be bonded to acid etched enamel with no-mix adhesive. The shear bond strength was sufficient to resist orthodontic force and was not affected by bonding agent greatly. 2. The shear bond strength of no-mix adhesive bonded to acid etched glass ionomer cement restorations was sufficient to resist orthodontic force. However. the fracture risk of glass ionomer cement restorations was increased during debonding. The bonding agent couldn't increase the shear bond strength greatly. 3. The shear bond strength of glass ionomer cement bonded to glass ionomer cement restorations was lower than that of no-mix adhesive. The shear bond strength was sufficient to resist orthodontic force and was greatly decreased by bonding agent. 4. The shear bond strength of glass ionomer cement bonded to composite resin restorations was too low to resist orthodontic force.

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rf 마그네트론 스퍼링에 의하여 증착된 TiN 박막의 물성에 대한 증착변수의 영향 (Effect of Deposition Parameters on the Properties of TiN Thin Films Deposited by rf Magnetron Sputtering)

  • 이도영;정지원
    • Korean Chemical Engineering Research
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    • 제46권4호
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    • pp.676-680
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    • 2008
  • Radio-frequency (rf) 마그네트론 스퍼터링법을 이용하여 $SiO_2(2000{\AA})/Si$ 기판위에 TiN 박막이 증착되었다. $N_2/Ar$ 혼합가스에서 $N_2$ 가스의 농도, rf power, 공정압력 등을 변화시켜서 TiN 박막이 증착되었고 증착된 박막의 증착속도, 전기저항도 및 표면의 거칠기 등이 조사되었다. $N_2$ 가스의 농도가 증가함에 따라서 증착속도는 감소하였고 저항도는 증가하였으며 표면의 거칠기는 감소하였다. rf power가 증가함에 따라서 증착속도는 증가하였지만 저항도는 감소하였다. 증착압력의 증가에 따라서 증착속도는 큰 변화가 없었지만 저항도가 급격히 증가하였으며, 1 mTorr의 압력에서 $2.46{\times}10^{-4}{\Omega}cm$의 저항도를 갖는 TiN 박막이 얻어졌다. 박막의 증착속도와 저항도는 상관관계가 있는 것이 관찰되었고 특히 증착압력이 박막의 저항도에 가장 큰 영향을 미치는 것을 알 수 있었다.

Aspect ratio enhancement of ZnO nanowires using silicon microcavity

  • Kar, J.P.;Das, S.N.;Choi, J.H.;Lee, Y.A.;Lee, T.Y.;Myoung, J.M.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.34.1-34.1
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    • 2009
  • A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

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450 mm 웨이퍼 공정용 System의 기하학적 구조에 따른 플라즈마 균일도 모델링 분석 (Plasma Uniformity Numerical Modeling of Geometrical Structure for 450 mm Wafer Process System)

  • 양원균;주정훈
    • 한국진공학회지
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    • 제19권3호
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    • pp.190-198
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    • 2010
  • 450 mm의 웨이퍼 공정용 플라즈마 장비의 개발을 위하여 안테나 형상, 챔버의 직경, 웨이퍼까지의 거리에 따른 플라즈마 균일도를 Ar과 $CF_4$에 대하여 축대칭 2차원으로 수치 모델링하였다. 챔버의 종횡비를 직경, 기판까지의 거리, 배기구의 면적으로 나누어서 결정하고 여기에 안테나 구조를 변경하여서 최적의 플라즈마 균일도를 갖는 조건을 도출하였다. Drift diffusion식과 준중성 조건을 이용한 간략화를 이용하였으며 표면 재결합과 식각 반응을 이온에너지의 함수로 처리하였다. 반응기판 표면에서의 플라즈마 밀도 균일도는 기판 홀더와 챔버 벽면과의 거리, 기판과 소스와의 거리가 멀수록 좋아졌으며, 안테나의 디자인이 4 turn으로 1층인 경우, 두 번째, 네 번째 turn만 사용하여 전류비 1 : 4에서 기판표면에서의 플라즈마 균일도를 4.7%까지 낮출 수 있었다. Ar과 $CF_4$의 반경 방향으로 전자 온도 균일도 50%, 전자 밀도 균일도 19%의 차이가 있었다.

Piezo-electrically Actuated Micro Corner Cube Retroreflector (CCR) for Free-space Optical Communication Applications

  • Lee, Duk-Hyun;Park, Jae-Y.
    • Journal of Electrical Engineering and Technology
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    • 제5권2호
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    • pp.337-341
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    • 2010
  • In this paper, an extremely low voltage operated micro corner cube retroreflector (CCR) was fabricated for free-space optical communication applications by using bulk silicon micromachining technologies. The CCR was comprised of an orthogonal vertical mirror and a horizontal actuated mirror. For low voltage operation, the horizontal actuated mirror was designed with two PZT cantilever actuators, torsional bars, hinges, and a mirror plate with a size of $400{\mu}m{\times}400{\mu}m$. In particular, the torsional bars and hinges were carefully simulated and designed to secure the flatness of the mirror plate by using a finite element method (FEM) simulator. The measured tilting angle was approximately $2^{\circ}$ at the applied voltage of 5 V. An orthogonal vertical mirror with an extremely smooth surface texture was fabricated using KOH wet etching and a double-SOI (silicon-on-insulator) wafer with a (110) silicon wafer. The fabricated orthogonal vertical mirror was comprised of four pairs of two mutually orthogonal flat mirrors with $400{\mu}m4 (length) $\times400{\mu}m$ (height) $\times30{\mu}m$ (thickness). The cross angles and surface roughness of the orthogonal vertical mirror were orthogonal, almost $90^{\circ}$ and 3.523 nm rms, respectively. The proposed CCR was completed by combining the orthogonal vertical and horizontal actuated mirrors. Data transmission and modulation at a frequency of 10 Hz was successfully demonstrated using the fabricated CCR at a distance of approximately 50 cm.