• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1063-1066
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• 2006

We report the transparent getter performance of $POCl_3$ and amine based system by using the acid-base reaction in the fastest chemical reaction for top emitting OLEDs. OLED device including synthesized getter component exhibited stable current-voltage curve after 500 hours under $60^{\circ}C$, 90% RH storage condition and showed stable surface performance until 520 hours.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.383-386
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• 2006

Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigating the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1469-1472
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• 2006

We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.732-735
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• 2002

By forming lens-like shapes on the electrode surfaces in OLEDs, the external quantum efficiency is enhanced. The external quantum efficiency of the proposed structure can be much more increased compared to that of the flat structure by decreasing the length of major axis and increasing the length of minor axis for the lens-like shapes.

• Journal of Information Display
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• v.10 no.2
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• pp.68-71
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• 2009

A replica-molding method of fabricating a dual-gap substrate for transflective liquid crystal (LC) displays is demonstrated. The dual-gap substrate provides homeotropic alignment for the LC molecules without any surface treatment and embedded bilevel microstructure on one of the two surfaces to maintain different cell gaps between the transmissive and reflective subpixels. The proposed transflective LC cell shows no electro-optic disparity between two subpixels and reduces the panel thickness and weight by 30% compared to the conventional transflective LC cell, which has two glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.167-170
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• 2005

The mechanism of striation in the coplanar- and matrix-type plasma display panel (PDP) cells has been studied using the particle-in-cell Monte-Carlo Collision (PIC-MCC) model. The striation formation is related to the ionization energy of neutral atoms and the well-like deformation of space potential by space charge distribution. Negative wall charge accumulation by electrons on the MgO surface of the anode region is also one of the key factors for the formation of striation. The clearness of the striation phenomenon in PIC-MCC code in comparison with fluid code can be explained by using nonlocal electron kinetic effect.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1746-1748
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• 1997

The surface discharge type ac plasma display panel(ac PDP) is a flat display devices using gas discharge. In ac PDP, parallel electrodes covered with dielectric layer are on a substrates. The discharge current characteristics are affected by cell structure. In this study, the relationship between the principal design factor and discharge characteristics is discussed, based on experiment, and the current waveform is measured by voltage detector and storage O.S.C. as a parameter of design factor, e.g., electrode gap and width.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• Journal of Information Display
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• v.4 no.3
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• pp.12-16
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• 2003

In connection with the ion exchange strengthening on soda-lime-silicate, substrate glass for display use was investigated. In the processing, the temperature was varied during the ion exchange in order to make stress profile and to determine optimum condition. In the present work, we found that the maximum value of strength was 617.8 MPa after an ion exchange process at 470 $^{\circ}C$ for 1h, and then, at 450 $^{\circ}C$ for 24h. Also, the effect of residual stress placed on the near surface was measured by analyzing the number of crack branches and brittleness. This approach allowed us the residual stress profile to be engineered to improve mechanical reliability.