• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.11
• /
• pp.837-842
• /
• 2010

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.6
• /
• pp.938-946
• /
• 2008

Fe-base amorphous alloy and two crystalline phases composite were fabricated. The effect of temperature and strain rate on mechanical properties was evaluated utilizing compression test. Mixture of non-crystalline and crystalline phases were found using X-ray diffraction (XRD) and differential thermal analysis (DTA) tests. Based on glass transition temperature and crystallization temperature. compression tests were performed in the temperature ranging from $560^{\circ}C$ to $700^{\circ}C$ with $20^{\circ}C$ interval. Relationship between microstructure, including fracture surface morphology, and mechanical behavior was studied. The peak stress of Fe-base amorphous alloy was over 2GPa and expected to have a good wear resistance, but it is expected hard to deform because of low ductility. The peak stress and elongation of two crystalline phases composite was over 1GPa and about 20%, therefore it is possible to deform high strength wear resistant materials such as engine valve.

• Advances in materials Research
• /
• v.8 no.3
• /
• pp.179-196
• /
• 2019

This paper researches static and dynamic bending behaviors of a crystalline nano-size shell having pores and grains in the framework of strain gradient elasticity. Thus, the nanoshell is made of a multi-phase porous material for which all material properties on dependent on the size of grains. Also, in order to take into account small size effects much accurately, the surface energies related to grains and pores have been considered. In order to take into account all aforementioned factors, a micro-mechanical procedure has been applied for describing material properties of the nanoshell. A numerical trend is implemented to solve the governing equations and derive static and dynamic deflections. It will be proved that the static and dynamic deflections of the crystalline nanoshell rely on pore size, grain size, pore percentage, load location and strain gradient coefficient.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.383-383
• /
• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Journal of the Korean institute of surface engineering
• /
• v.13 no.1
• /
• pp.3-7
• /
• 1980

The crystalline structure and leveling action on the deposit of zinc from the cyanide zinc electroplating bath containing organic additives, such as aldehydes, polymers, amines and condensed product, have been studied by microscope and X-ray diffraction methods. The crystalline structure of the deposit from the bath containing no-additive, polymers and aldehydes appeared very strong orientation on (101) plane and the surface was rough, while from condensed product having remarkable effects in brightness appeared very strong orientation on (110) and the crystallinity was very fine. In the leveling action, the effect of any additives except reaction product was not appreciable, whereas the effect of the reaction product obtained remarkably excellent result.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.04a
• /
• pp.73-77
• /
• 2003

The backlight unit(BLU) is used as a light source of TFT liquid-crystalline-display (TFT-LCD) module. In this backlight unit, one of important components is the light guide, which is usually made of transparent polymers. Currently the screen-printing method is mainly used for the light guide as a manufacturing process. However, it has limitation to the flexibility of three-dimensional optical design. In the present paper a new alternative manufacturing method for the light guide with low-cost is proposed. This manufacturing method is named as direct surface forming (DSF), which is very similar to the well-known hot embossing except for partial contact between mold and substrate. The results of this new manufacturing method are presented in terms of processing condition, dimensional accuracy, productivity, etc.

• Korea-Australia Rheology Journal
• /
• v.15 no.4
• /
• pp.167-171
• /
• 2003

The backlight unit (BLU) is used as a light source of TFT liquid-crystalline-display (TFT-LCD) module. In this backlight unit, one of important components is the light guide, which is usually made of transparent polymers. Currently, the screen-printing method is mainly used for the light guide as a manufacturing process. However, it has limitation to the flexibility of three-dimensional optical design. In the present paper a new alternative manufacturing method for the light guide with low-cost is proposed. This manufacturing method is named as direct surface forming (DSF), which is very similar to the well-known hot embossing except for partial contact between mold and substrate. The results of this new manufacturing method are presented in terms of processing condition, dimensional accuracy, productivity, etc.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.6
• /
• pp.255-259
• /
• 2010

In this work, Ni-Co composites incorporated with nano-sized SiC particles in the range of 45-55 nm are prepared by electroplating. The effects of plating duration on the chemical composition, surface morphology, crystalline structures and hardness have been studied. The maximum hardness of Ni-Co-SiC composite coating is approximately 633 Hv at plating duration of 1 h. The hardness is gradually decreased with increasing plating duration, which can be attributed to the growth of crystalline size and the agglomerates of SiC nano-particles. It is therefore explained that the grain refinement of Ni-Co matrix and stable dispersion of SiC particles play an important role for strengthening, which indicate Hall-Petch relation and Orowan model were dominant for hardening of Ni-Co-SiC composite coatings.

• Proceedings of the KIEE Conference
• /
• 2003.10a
• /
• pp.49-52
• /
• 2003

Single crystalline silicon (SCS) was adopted for a reliable micromirror array of biochip fabrication applications. SCS has excellent mechanical properties and smooth surface, which is the best material for micromirror devices. The mirror array has $16{\times}16$ micromirrors and each mirror has a $120{\mu}m{\times}100{\mu}m$ reflective surface. The micromirror has simple torsional beam springs and electrostatic force was used for driving. The designed tilting angle was $9.6^{\circ}$, and the tilting angles were measured according to applied voltages. The surface roughness was measured by a laser profiler. The response time was measured using He-Ne laser and position sensitive diode (PSD), and the lifetime was checked for reliability proof.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.2
• /
• pp.139-144
• /
• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.