• 대한기계학회논문집A
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• 제24권7호
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• pp.1703-1711
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• 2000

Microstructural morphology of molded composites of thermotropic liquid crystalline polymer(LCP) and polyamide 6 (PA6) has been studied as a function of epoxy fraction. Injection-moulding of a thin composite plaque at a temperature below the melting point of the LCP fibrils by suing the extruded LCP/PA6 pellets produced multi-layered structures: 1) the surface skin layer with thickness of 65-120 ym exhibiting a transverse orientation, 2) the sub-skin layer with an orientation perpendicular to the surface skin, i.e. in the flow direction, 3) the core layer with arc-curved flow patterns. Similar microstructural orientations were observed in the respective layers for the composite plaques with different fractions of epoxy.

• 한국표면공학회지
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• 제27권2호
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.1-347.1
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• 2016

Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.149-153
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• 2011

The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.112-112
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• 2013

Well-defined surfaces of single-crystalline solid materials are starting points of self-organizationof nanostructures and chemical reactions controlled in nanoscale. Although highly ordered atomicarrangement can be obtained on semiconductor surfaces, they can be maintained only in vacuumand not in air or in aqueous environment. Since single-crystalline metal oxide surfaces arechemically stable and no further oxidation occurs, their atomic structures can be utilized fornanofabrication in liquid processes, nanoelectrochemistry and nanobiotechnology. Sapphire is oneof the most stable metal oxides and its crystalline quality is excellent, as can be applied to electronicdevices that require ultralow defect densities. We recently found that chemical phase separationoccurs on sapphire surfaces by annealing processes and the formed nanodomains exhibit specificproperties in air and in water [1,2]. In our experiments, highly selective and controllable adsorptionof various protein molecules is observed on the phase-separated surfaces though the materials andcrystallographic orientations are identical [3,4]. Planar lipid bilayers supported on thephase-separated sapphire surface also exhibit a specific formation site selectivity [5]. Chemicalnanodomains appear on other metal-oxide surfaces, such as well-ordered titania surfaces. Wedemonstrate that surface chemistry of the nanodomains can be characterized in aqueousenvironment using atomic force microscopy equipped with colloidal tips and then show adsorptionand desorption behaviors of various proteins on the phase-separated surfaces.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• 한국안광학회지
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• 제7권2호
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• pp.181-187
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• 2002

수정체는 조절력의 변화에 의해서 곡률이 변화한다. 조절력은 탄성체인 수정체에 힘을 수직으로 주는 경우 정점 방향으로 길이가 늘어난다. 힘을 받는 수정체는 밀도 분포와 형태가 후면에 치우쳐있어, 후면 방향의 수평 힘 보다 전면 방향의 수평 힘이 더 크다. 그러므로 후면 방향 보다 전면 방향의 두께가 더 많아 늘어난다. 그러나 조절력이 일정 값 보다 커지기 시작하면 전면에서는 팽창률이 한계에 도달하다. 이 때 전면 방향의 수평 힘 보다 후면 방향의 수평 힘이 더 커지게 되어, 전면 방향 보다 후면 방향의 두께가 더 많아 늘어난다. 전면과 후면의 두께변화 차이는 조절력에 대해 2차 곡선(${\Delta}=B_1D+B_2D^2$)을 이룬다. 조절력에 따른 전면과 후면의 두께(${\Delta}t_a$, ${\Delta}t_p$) 차이 변화 곡선은 다음과 같이 표현된다. $${\Delta}t_a=t_a-t_{ao}=t_{max}+t_0{\exp}(-A/B)-t_{ao}$$ $${\Delta}t_p=t_p-t_{po}=t_{min}+t_0{\exp}(A/B)-t_{po}$$ 인간의 수정체에서 구한 각각의 Parameter값은 전면에서 $t_{min}=1.1.06$, $t_0=-0.33$, B=9.32, 후면에서 $t_{max}=1.97$, $t_0=0.10$ B=7.96 등을 얻었다. 조절력에 따른 수정체의 전면과 후면에서 정점 곡률 안정의 변화는 다음과 같다. $$R=R_0+R_1{\exp}(D/k)$$ 수정체에서 구한 각각의 Parameter 값은 전면에서 $R_{min}=5.55$, $R_1=6.87$, k=4.65, 후면에서 $R_{max}=-68.6$, $R_1=76.7$, k=308.5 등을 얻었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1816-1821
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• 2003

The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1039-1040
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• 2006

Vacuum degassing is essential in the preparation of RS P/M aluminum alloys to remove adsorbates and for the decomposition of hydrated-$Al_{2}O_3$ on the powder surface. Changes in the surface characteristics during vacuum degassing were investigated by X-ray photoelectron spectroscopy and temperature-programmed desorption measurement. Hydrated-$Al_{2}O_3$ decomposition to crystalline-$Al_{2}O_3$ and hydrogen desorption on the surface of argon gas-atomized aluminum powder occurred at 623 K and 725 K, respectively. This temperature difference suggests that the reaction converting hydrated-$Al_{2}O_3$ to crystalline-$Al_{2}O_3$ during vacuum degassing should be divided into the two reactions $"2Al+Al_{2}O_3{\cdot}3H_2O\;2Al_{2}O_3+6H_{surf}"and"6H_{surf}3H_2"$.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.18-22
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. This mechanical stress and strain can be cured by thermal anneal ing process. The sapphire crystalline wafers were annealed at $1100~1400^{\circ}C$ and then characterized by double crystal X-ray diffraction. The sample showed good quality of crystalline wafer surface wi th full width at hal f maximum of 16 arcsec for the 4-hour heat-treatment at $1300^{\circ}C$.