• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.9-15
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• 2004

We present a new unified analytical front surface potential model, which can accurately describe the transitions between the partially-depleted (PD) and the fully-depleted (FD) regimes with an analytical expression for the critical voltage V$_{c}$ delineating the PD and the FD region. It is valid in all regions of operation (from the sub -threshold to the strong inversion) and has the shorter calculation time than the iterative procedure approach. A charge sheet model based on the above explicit surface potential formulation is used to derive a single formula for the drain current valid in all regions of operation. Most of the secondary effects can be easily included in the charge sheet model and the model accurately reproduces various numerical and experimental results. No discontinuity in the derivative of the surface potential is found even though three types of smoothing functions are used. More importantly, the newly introduced parameters used in the smoothing functions do not strongly depend on the process parameter.

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.574-582
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• 1991

The CO molecules adsorbed on Ni(111) surface is studied in the cluster approximation employing EH method with self-consistent charge iteration. The effect of CO coverage is simulated by allowing the variation of valence state ionization potentials of each Ni atom in model cluster according to the self-consistent charge iteration method. The CO coverage dependent C-O stretching frequency shift, adsorption site conversion, and metal work function change are attributed to the charge transfer between metal surface and adsorbate. For CO/Ni(111) system, net charge transfer from Ni surface to chemisorbed CO molecules makes surface Ni atoms be more positive with increasing coverage, and lowers Ni surface valence band. This leads to a weaker interaction between metal surface valence band and Co $2{\pi}^{\ast}$ MO, less charge transfer to a single CO molecule, and the bule shift of C-O stretching frequency. Further increase of coverage induces the conversion of 3-fold site CO to lower coordination site CO as well as the blue shift of C-O stretching frequency. This whole process is accompanied by the continuous increase of metal work function.

• Structural Engineering and Mechanics
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• v.43 no.6
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• pp.835-845
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• 2012

This paper focuses on the stochastic response analysis of industrial masonry chimneys to surface blast-induced random ground motions by using a three dimensional finite element model. Underground blasts induce ground shocks on nearby structures. Depending on the distance between the explosion centre and the structure, masonry structures will be subjected to ground motions due to the surface explosions. Blast-induced random ground motions can be defined in terms of the power spectral density function and applied to each support point of the 3D finite element model of the industrial masonry system. In this paper, mainly a parametric study is conducted to estimate the effect of the blast-induced ground motions on the stochastic response of a chimney type masonry structure. With this purpose, different values of charge weight and distance from the charge centre are considered for the analyses of the chimney. The results of the study underline the remarkable effect of the surface blast-induced ground motions on the stochastic behaviour of industrial masonry type chimneys.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.530-537
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• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1631-1636
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• 1989

A space charge model for semiconductor reduced gas sensors has been roposed and applied to gas sensing mechanism. SnO2-x and SnO2-x/Pt thin film were deposited by vacuum evaporating method. And Hall effect and gas sensitivity characteristics of these sensors were measured. From the space charge model and carrier concentration, the number of the adsorbed gas atom on the solid surface was calculated quantitatively. The gas sensing model was compared with CO gas sensitivities of the fabricated thin film gas sensors.

• 한국전산유체공학회:학술대회논문집
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• 2004.10a
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• pp.161-164
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• 2004

A finite volume numerical model is developed for simulating non-equilibrium electroosmotic flow in micro- and nanochannels. The Guoy-Chapman model is adopted to compute the flow and electric potential. The Nernst-Planck equation is employed to trace unsteady transports of ionic species, i.e., time-dependent net charge density. A new set of boundary conditions based on surface charge density are designed rather than using the conventionally-employed zeta potential. A few issues for an efficient computation of electroosmotic flows are discussed. Representative computational examples are given to illustrate the robustness of the numerical model.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.51 no.11
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• pp.585-590
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• 2002

In this paper, the 3 dimensional surface charge method is applied to calculate electric fields distribution inside a general and an optimal model of GIS with a metal impurity and a void respectively. We know the optimal model can reduce tangential electric fields at solid insulator surface to 70% of the general model and infulence fields distribution near a metal impurity. Meanwhile, we find the optimal model does not decrease field distribution inside a void in the insulator.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1681-1683
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• 1998

Unlike AC, DC dielectric characteristics of the spacer are very influenced by the quantity and the distribution of surface charges. A general impression of the distribution of surface charges is obtained if electrostatic powders are sprinkled over the surface. The distribution of surface charge was investigated with dust figures. Mechanism of charge accumulation on the spacer of $SF_6$ GIS has been studied using various types of model spacers which have different depths. As a result, it was found that charge accumulation was dominantly influenced by the normal component of the electric field and the usage of embedded electrodes was an adequate method to lessen field concentration around the triple junction. The guide of the optimum depth of the spacer was proposed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.338-342
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• 2015

Ripples and charge impurity effect of graphene are considered as the origin of charge puddles in graphene sheet on SiO2. However, this topic is very controversial among researchers in graphene community. In this study, by using density functional theory, we calculate the band structure of the rippled graphene model and charged impurity model that is located close to the (0001) ${\alpha}$-quartz surface. We expect that this study will provide great insight on this matter.