• Title/Summary/Keyword: surface carrier density

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A Study on the Synthesis and Electrochemical Characteristics of Carbonized Coffee Powder for Use as a Lithium-Ion Battery Anode (리튬 이온 이차전지 음극 활물질용 탄화 커피 분말 제조 및 전기화학적인 특성연구)

  • Kim, Tae Gyun;Cho, Jin Hyuk;Pham-Cong, De;Jeon, Injun;Hwang, Jin Hyun;Kim, Kyoung Hwa;Cho, Chae Ryong
    • New Physics: Sae Mulli
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    • v.68 no.12
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    • pp.1315-1323
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    • 2018
  • We studied the carbonization due to the annealing condition of waste coffee powder for application as an active anode material for lithium-ion batteries (LIBs). The coffee powder used as an active anode material for LIBs was obtained from coffee beans, not from a coffee shells. The waste coffee powder was dried in air and heat-treated in an $Ar/H_2$ atmosphere to obtain a pore-forming activated carbon powder. The specific capacity of the sample annealed at $700^{\circ}C$ was still 303 mAh/g after 1000 cycles at a current density of 1000 mA/g and with a coulombic efficiency of over 99.5%. The number of pores and the pore size of the waste coffee powder were increased due to chemical treatment with KOH, which had the some effect as an increased specific surface area. The waste coffee powder is considered to be a very promising active anode material because of both its excellent electrochemical properties due to enhanced carrier conduction and its being a cost effective resource for use in LIBs.

Changes of Nitrifying Bacterial Populations in Anaerobic-Anoxic-Oxic Reactors (혐기-무산소-호기 반응조내 질화세균군의 변화)

  • Park, Jong-Woong;Lee, Young-Ok;Go, Jun-Heok;Ra, Won-Sik;Lim, Uk-Min;Park, Ji-Eun
    • Journal of Korean Society of Environmental Engineers
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    • v.27 no.2
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    • pp.138-144
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    • 2005
  • This study was carried out to investigate the changes of nitrifying bacterial populations including Nitrosomonas sp. and Nitrobacter sp. in $A^2/O$ pilot plant with the configuration of anaerobic-anoxic-oxic reactors. The suspended nitrifying bacterial populations in mixed liquor and those of attached populations on granular carrier surface made by molded waste tire were analyzed by Fluorescent in situ Hybridization(FISH) method. The nitrification rate of a pilot plant showed the value of $1.97{\sim}2.98\;mg\;N/g$ MLVSS hr. The ratios of suspended ammonia oxidizer including Nitrosomonas sp. (NSO) to total bacteria in each reactor were oxic < anoxic < anaerobic. On the contrary, the ratios of suspended nitrite oxidizer including Nitrobacter sp. (NIT) were anaerobic < anoxic < oxic. The thickness, dry density and mass of the attached biomass on granular carriers were $180{\sim}188\;{\mu}m$, $38.5{\sim}43.9\;mg/cm^3$, $29.4{\sim}32.5\;mg/g$, respectively. Also, the ratios of attached nitrifier to total bacteria on granular carriers were similar regardless of ammonia/nitrite-oxidizer (NSO; 3.2%, NIT; 2.8%) and very low compared to those(NSO; $22.8{\sim}28.4%$, NIT; $17{\sim}26%$) of suspended nitrifier.

Metalorganic Chemical Vapor Deposition of Copper Films on TiN Substrates Using Direct Liquid Injection of (hfac)Cu(vtmos) Precursor ((hfac)Cu(vtmos)의 액체분사법에 의한 TiN 기판상 구리박막의 유기금속 화학증착 특성)

  • Jun, Chi-Hoon;Kim, Youn-Tae;Kim, Dai-Ryong
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1196-1204
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    • 1999
  • We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

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