• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국세라믹학회지
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• 제51권3호
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• KSBB Journal
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• 제6권3호
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• pp.231-240
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• 1991

Recently, developments of large scale and high density cell culture methods have been the objects of many researches, because the demand of various pharmaceutical products produced by animal cell culture has been rapidly increasing. The cell culture equipment should have the requirements such as sufficient oxygen transfer and mixing, low shear stress and surface tension, and small foaming. In order to develop a proper bioreactor meeting these requirements simultaneously, a perfluorocarbon having high solubility of oxygen was sprayed into the medium as an oxygen carrier instead of air. Also, a new impeller was developed and combined together with the perfluorocarbon spraying system so as to design a new bioreartor for cell cultivation. The new impeller had better characteristics of mixing and oxygen transfer than the paddle and cell-lift impellers based on the same, shear rate. But, it was observed that the volumetric oxygen transfer coefficient of the new bioreactor decreased with increasing cell density during E. coli fermentation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.181-182
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• 2012

본 연구에서는 반도체 기술의 핵심으로 알려있는 플라즈마 표면 처리 공정을 이용하여 인위적으로 그래핀과 기능기 반응을 통한 도핑효과를 일으켜, 전계효과(Electric Field Effect)를 인가하였을 때 그래핀 내에서 발생하는 Electron & Hole carrier 들의 accumulation & Depletion 효과에 의한 Charge Density 변화를 Graphene Field Effect Transistors (GFETs) 소자의 전기적 특성 변화를 확인하였다. 특히, 그래핀 내 Conduction of electron을 높이기 위하여, $N_2+H_2$ 가스 조합을 플라즈마 방전가스로 사용하였으며, Optical Emission Spectroscopy (OES) 및 Langmuir-probe 측정을 통하여 합성가스의 ICP 방전 상태 및 효과를 예측하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.254-255
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• 2014

RF magnetron sputtering법으로 증착한 비정질 IGZO 박막과 이를 Active layer로 이용한 TFT의 Transfer 특성에 대한 RF Power의 영향에 대해 연구하였다. Carrier concentration은 Sputtering 공정 중에 산소 분압으로 조절하였다. RF Power가 75에서 150W로 증가할수록 IGZO 박막의 Roughness는 12.2에서 $6.5{\AA}$ 감소하였고 Density는 6.0에서 $6.1g/cm^3$로 증가하였다. 또한, 모든 IGZO 박막은 가시광 영역에서 85% 이상의 투과율을 보였고 Optical band gap은 미세하게 감소하였다. RF Power가 증가할수록 a-IGZO TFT의 Threshold voltage는 0.9에서 7V로 증가하였고, Subthreshold slope은 0.3에서 0.8 V/decade로 증가하였다. 하지만 Mobility는 11에서 $19cm^2/V{\cdot}s$로 증가하였다.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.65-69
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• 2017

This paper presents a Technology-CAD (TCAD) simulation of the characteristics of crystalline Si pillar array solar cells. The junction depth and the surface concentration of the solar cells were optimized to obtain the targeted sheet resistance of the emitter region. The diffusion model was determined by calibrating the emitter doping profile of the microscale silicon pillars. The dimension parameters determining the pillar shape, such as width, height, and spacing were varied within a simulation window from ${\sim}2{\mu}m$ to $5{\mu}m$. The simulation showed that increasing pillar width (or diameter) and spacing resulted in the decrease of current density due to surface area loss, light trapping loss, and high reflectance. Although increasing pillar height might improve the chances of light trapping, the recombination loss due to the increase in the carrier's transfer length canceled out the positive effect to the photo-generation component of the current. The silicon pillars were experimentally formed by photoresist patterning and electroless etching. The laboratory results of a fabricated Si pillar solar cell showed the efficiency and the fill factor to be close to the simulation results.

• 한국표면공학회지
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• 제29권5호
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• pp.449-453
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• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.214-214
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• 2012

화학기상증착법을 통해 대면적 합성이 가능해진 그래핀의 개발로 인해 그래핀에 관한 연구가 활발히 진행되었다. 특히, 플라즈마 처리에 관한 연구를 통해 그래핀의 도핑이 가능하다는 것이 밝혀졌고 이는 곧 그래핀 내의 전하 농도를 변화시킬 것으로 예상된다. 따라서 본 연구에서는 Van der Pauw 방법을 통해 플라즈마 처리에 따른 그래핀 내의 전하 농도와 면저항을 측정하고 이를 통해 이동도를 계산하는 실험을 진행하였다.