• Title/Summary/Keyword: surface barrier

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SF6 and O2 Effects on PR Ashing in N2 Atmospheric Dielectric Barrier Discharge

  • Jeong, Soo-Yeon;Kim, Ji-Hun;Hwang, Yong-Seuk;Kim, Gon-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.4
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    • pp.204-209
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    • 2006
  • Photo Resist (PR) ashing process was carried out with the atmospheric pressure- dielectric barrier discharge (ADBD) using $SF_6/N_2/O_2$. Ashing rate (AR) was sensitive to the mixing ratio of the oxygen and nitrogen of the blower type of ADBD asher. The maximum AR of 5000 A/min was achieved at 2% of oxygen in the $N_2$ plasma. With increasing the oxygen concentration to more than 2% in the $N_2$ plasma, the discharge becomes weak due to the high electron affinity of oxygen, resulting in the decrease of AR. When adding 0.5% of SF6 to $O_2/N_2$ mixed plasma, the PR AR increased drastically to 9000 A/min and the ashed surface of PR was smoother compared to the processed surface without $SF_6$. Carbon Fluorinated polymer may passivate the PR surface. It was also observed that the glass surface was not damaged by the fluorine.

Fracture Behavior of Ceramic Coatings Subjected to Thermal Shock (열충격에 의한 세라믹코팅재의 파괴거동)

  • Han, Ji-Won
    • Journal of the Korean Society of Safety
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    • v.18 no.4
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    • pp.39-43
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    • 2003
  • An experimental study was conducted to develop and understanding of fracture behavior of ceramic thermal barrier coating when subjected to a thermal shock loading. The thermal loading was applied using a 1.5kW $CO_2$ laser. In the experiments, beam-shaped specimens were subjected to a high heat flux for 4sec and cooling of 7sec in air. The interface crack length was increased as the crack density, the surface pre-crack legth and the coating thickness were increased. The center surface crack length was increased as the maximum surface temperature got higher and the surface pre-crack length for shorter.

Surface treatment of Si wafer for solar cell using reactive plasma method (반응성 플라즈마를 이용한 태양전지용 Si기판의 표면 처리)

  • Park, Byung-Wook;Kwak, Dong-Joo;Sung, Youl-Moon
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1305-1306
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    • 2007
  • To lower the fabrication cost of silicon solar cells, a surface treatment using a dielectric barrier discharge instead of a wet cleaning technique was examined on electrode surfaces on silicon solar cells. The fill factor obtained through measuring current-voltage characteristics was evaluated, and the treated surface state was characterized by energy-dispersive X-ray. It was found that the dielectric barrier discharge effectively activated the electrode surface and the surface treatment on finger electrodes contributed greatly to improve the fill factor.

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Development of surface functional coating thin film utilizing combined processes of plasma activation surface treatment and nanoclay dispersion: In applications for transparent water vapor and oxygen barrier packaging films (플라즈마 활성화 표면처리 공정과 나노클레이 분산 적층 코팅을 이용한 표면 기능성 코팅 박막 개발: 수분 및 산소 차단성이 우수한 투명 포장재)

  • Nam Il Kim;Geug Tae Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.3
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    • pp.97-103
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    • 2023
  • Barrier films for transparent packaging materials with excellent moisture barrier properties are prepared, utilizing a nanoclay dispersion coating layer formed after a pretreatment process of plasma activation surface treatment process under vacuum at room temperature. Attention is paid on optimizing the coupling additive through the appropriate crosslinking process and optimal dispersion process of the coating process to enhance adhesion. Analysis of the functional coating thin film shows that the water vapor transmission rate is less than 10 g/m2/24 hrs (ASTM F-1249) and the oxygen transmission rate is less than 30 cc/m2/24 hrs (ASTM D3985). It is shown that water barrier properties of coating thin film prepared in this study are greater than conventional untreated films by 10 times or more. The thickness of the transparent gas barrier film is within 0.1 mm, and the transparent gas barrier complex is implemented in two layers. In the study of PET thin film interface characteristics, FT-IR experimental analysis shows the reaction activity was optimized at RDS 1.125 %.

Effects of Operating Parameters on Toluene Removal in Dielectric Barrier Discharge Process (무성방전내에서 톨루엔 제거에 미치는 운전변수의 영향)

  • 정재우;이용환;박경렬
    • Journal of Korean Society for Atmospheric Environment
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    • v.18 no.3
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    • pp.173-182
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    • 2002
  • We investigated the effects of operating variables, such as electrical. reactor and gas parameters on toluene removal and discharge property in the dielectric barrier discharge (DBD) process. The toluene removal was initiated with the energy transfer to the reactor by loading of voltages higher than the discharge onset value. The energy transfer and toluene removal increased with the applied voltage. Higher removal rate was observed with smooth surface electrode despite of lower energy transfer compared with the coarse electrode, because more uniform discharge can be obtained on smooth surface state. The decrease of dielectric material thickness enhanced the removal efficiency by increasing the discharge potential. The toluene removal efficiency decreased with the increase of the inlet concentration. The increase of gas retention time enhanced the removal efficiency by the increase of energy density. The oxygen and humidity contents seem to exert significant influences on the toluene removal by dominating the generation of electrons, ions, and radicals which are key factors in the removal mechanism.

Structural Analysis of Low Temperature Processed Schottky Contacts to n-InGaAs (저온공정 n-InGaAs Schottky 접합의 구조적 특성)

  • 이홍주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.533-538
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    • 2001
  • The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

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The Effect of Oxide Formation on the Lifetime of Plasma Sprayed or EB-PVD Thermal Barrier Coatings (플라즈마 용사 및 EB-PVD에 의한 열벽코팅 수명에 대한 산화물 생성의 영향)

  • ;R.D.Sisson;Jr
    • Journal of the Korean institute of surface engineering
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    • v.27 no.2
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    • pp.91-98
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    • 1994
  • For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.

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The Effect of Metallic Barrier on the Surface creeping Flash-over Voltage along the Insulation Materials (절연물의 연면섬락 전압에 미치는 금속 격벽의 영향)

  • Sung Kae Chung
    • 전기의세계
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    • v.14 no.2
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    • pp.8-13
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    • 1965
  • It is expected that the impurities contained in a solid state insulation material will affect a considerable influence on its break-down voltage, dielectric loss, and insulation resistance. In this thesis, as a preliminary experimental research for the investigation described above, the effect of metalic barrier between the electrodes on the creepin flash over discharge voltage along the surface of a solid insulation material has been investigated, and got some interesting results. It was found that generaly the flash over voltage rises when a metalic barrier is located between the electrodes. The results of this investigation will be taken into account as an important components on the insulation design to prevent the creeping flash over discharge in insulators, bushings, and so on.

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Etching Mechanism of Barrier Ribs in Plasma Display Panel (플라즈마 디스플레이 패널의 격벽형성의 에칭 메커니즘)

  • Chong, Eu-Gene;Jeon, Jae-Sam;Sung, Woo-Kyung;Kim, Hyung-Sun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.33-36
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    • 2006
  • To produce a fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_2O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The barrier ribs was etched with several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

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Ceramic barrier coated Pd hydrogen membrane on a porous nickel support (수소 분리용 팔라듐계 분리막의 세라믹 코팅 영향)

  • Lee, Chun-Boo;Lee, Sung-Wook;Park, Jin-Woo;Kim, Kwang-Ho;Hwang, Kyung-Ran;Park, Jong-Soo;Kim, Sung-Hyun
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.114.1-114.1
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    • 2010
  • A highly performed Pd-based hydrogen membrane has prepared successfully on a modified porous nickel support. The porous nickel support modified by impregnation method of $Al(NO_3)_3{\cdot}9H_2O$ (Aldrich Co.) over the nickel powder showed a strong resistance to hydrogen embrittlement and thermal stability. Plasma surface modification treatment was introduced as a pre-treatment process instead of conventional HCl wet activation. Ceramic barrier was coated on the external surface of the prepared nickel supports to prevent intermetallic diffusion and to enhance the affinity between the support and membrane. Palladium and copper were deposited at thicknesses of $4\mu}m$ and $0.5{\mu}m$, respectively, on a barrier-coated support by DC sputtering process. The permeation measurement was performed in pure hydrogen at $400^{\circ}C$. The single gas permeation of our membrane was two times higher than that of the previous membrane which do not have ceramic barrier.

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