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Wear Mechanism of CrN Coating on Aluminum Alloys Deposited by AIP Method

  • Kim, Seock-Sam;Suh, Chang-Min;Murakami, Ri-ichi
    • KSTLE International Journal
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    • v.3 no.1
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    • pp.43-48
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    • 2002
  • Dry sliding wear and friction test of CrN coaling on two types of aluminum alloy substrates,6061 Al and 7075 Al deposited by arc ion plating, was peformed with a ball-on-disk tribometer. The effects of normal Bead and the mechanical properties of substrate on the friction coefficient and wear-resistance of CrN coating were investigated. The worn surfaces were observed by SEM. The results show that surface micro-hardness of CrN- coated 7075 Al is higher than that of CrN-coated 6061 Al. With an increase in normal lead, wear volume increases, while the friction coefficient decreases. The friction coefficient of CrN-coated 6061 Al is higher than that of CrN-coated 7075 Al, while the wear-resistance of CrN-coated 6061 Al is lower than the CrN-coated 7075 Al's, which indicates that the substrate mechanical properties have strong inf1uences on the friction coefficient and wear of CrN coating. The main wear mechanism was fragments of CrN coating, which were caused by apparent plastic deformation of substrate during wear test.

Fermentation Characteristics and Microbial Protein Synthesis in an In Vitro System Using Cassava, Rice Straw and Dried Ruzi Grass as Substrates

  • Sommart, K.;Parker, D.S.;Rowlinson, P.;Wanapat, M.
    • Asian-Australasian Journal of Animal Sciences
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    • v.13 no.8
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    • pp.1084-1093
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    • 2000
  • An in vitro gas production system was used to investigate the influence of various substrate mixtures on a natural mix of rumen microbes by measurement of fermentation end-products. The treatments were combinations of cassava (15.0, 30.0 and 45.0%) with different roughage sources (ruzi grass, rice straw or urea treated rice straw). Microbial biomass, net $^{15}N$ incorporation into cells, volatile fatty acid production, gas volume and rate of gas production increased linearly with increasing levels of cassava inclusion. There was also an effect of roughage source, with rice straw being associated with the lowest values for most parameters whilst similar values were obtained for ruzi grass and urea treated rice straw. The results suggest that microbial growth and fermentation rate increase as a function of readily available carbohydrate in the substrate mixture. A strong linear relationship between $^{15}N$ enrichment, total volatile fatty acid production and gas production kinetics support the suggestion of the use of the in vitro gas production system as a tool for screening feedstuffs as an initial stage of feed evaluation.

Microcrystalline Silicon Film Growth on a Fluoride Film Coated Glass Substrate

  • Kim, Do-Young;Park, Joong-Hyun;Ahn, Byung-Jae;Yoo, Jin-Su;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.526-529
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    • 2002
  • Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

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Synthesis of Vertically Aligned CuO Nanorods by Thermal Oxidation (열산화법을 이용한 산화구리 나노선 수직성장)

  • Kim, Jimin;Jung, Hyuck;Kim, Dojin
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.1-6
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    • 2013
  • A simple thermal oxidation of Cu thin films deposited on planar substrates established a growth of vertically aligned copper oxide (CuO) nanorods. DC sputter-deposited Cu thin films with various thicknesses were oxidized in environments of various oxygen partial pressures to control the kinetics of oxidation. This is a method to synthesize vertically aligned CuO nanorods in a relatively shorter time and at a lower cost than those of other methods such as the popular hydrothermal synthesis. Also, this is a method that does not require a catalyst to synthesize CuO nanorods. The grown CuO nanorods had diameters of ~100 nm and lengths of $1{\sim}25{\mu}m$. We examined the morphology of the synthesized CuO nanorods as a function of the thickness of the Cu films, the gas environment, the oxidation time, the oxidation temperature, the oxygen gas flow rate, etc. The parameters all influence the kinetics of the oxidation, and consequently, the volume expansion in the films. Patterned growth was also carried out to confirm the hypothesis of the CuO nanorod protrusion and growth mechanism. It was found that the compressive stress built up in the Cu film while oxygen molecules incorporated into the film drove CuO nanorods out of the film.

Dielectric Properties of LCP and $BaTiO_3-SrTiO_3$ Composites for Embedded Matching Capacitors (내장형 capacitor를 위한 LCP와 $BaTiO_3-SrTiO_3$ 복합재의 유전특성)

  • Kim, Jin-Cheol;Yoon, Sang-Jun;Yoon, Keum-Hee;Oh, Jun-Rok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.60-60
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    • 2008
  • We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

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Evaluation of SBBR Process Performance Focused on Nitrogen Removal with External Carbon Addition (외부탄소원을 사용한 SBBR의 공정 특성 및 질소제거)

  • Han, Hyejeong;Yun, Zuwhan
    • Journal of Korean Society on Water Environment
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    • v.22 no.3
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    • pp.566-571
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    • 2006
  • A sequencing batch biofilm reactor (SBBR) operated with a cycle of anaerobic - aerobic - anoxic - aerobic has been evaluated for the nutrient removal characteristics. The sponge-like moving media was filled to about 10% of reactor volume. The sewage was the major substrate while external synthetic carbon substrate was added to the anoxic stage to enhance the nitrogen removal. The operational results indicated that maximum T-N and T-P removal efficiencies were 97% and 94%, respectively were achieved, while COD removal of 92%. The observations of significant nitrogen removal in the first aerobic stage indicated that nitrogen removal behaviour in this SBBR was different to conventional SBR. Although the reasons for aerobic nitrogen removal has speculated to either simultaneous nitrification and denitrification or anoxic denitrification inside of the media, further researches are required to confirm the observation. The specific oxygen uptake rate (SOUR) test with biofilm and suspended growth sludge indicated that biofilm in SBBR played a major role to remove substrates.

The Effect of Substrate Surface Roughness on In-Situ Intrinsic Stress Behavior in Cu Thin Films (기판 표면 조도에 따른 구리박막의 실시간 고유응력 거동)

  • Cho, Moohyun;Hwang, Seulgi;Ryu, Sang;Kim, Youngman
    • Korean Journal of Metals and Materials
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    • v.47 no.8
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    • pp.466-473
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    • 2009
  • Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

Optimization of disposable paper-based test strips for hypochlorous acid detection

  • Rita E. Ampiaw;Muhammad Yaqub;Changyeon Woo;Wontae Lee
    • Membrane and Water Treatment
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    • v.14 no.4
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    • pp.181-189
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    • 2023
  • The Covid-19 pandemic has increased demand for chlorine-based sanitizing solutions, most of which contain hypochlorous acid (HOCl) as an active agent. Free chlorine (HOCl) in these sanitizers is crucial for their efficacy. Disposable test strips are affordable and convenient tools for determining various qualitative and quantitative parameters. In this study, disposable opto-chemical test strips were developed by physically immobilizing 3,3',5,5'-tetramethylbenzidine (TMB) and o-dianisidine (o-D) reagents on chromatography and filter paper-based test strips for the visualization and detection of free chlorine in the form of HOCl. The reagents undergo a rapid color change upon reaction with chlorine through a redox reaction. The paper-based test strips showed rapid color change within a minute and a low sample volume requirement (1 ml). This portable, disposable paper-based test strip is a simple and cost-effective way to rapidly detect the presence of HOCl sanitizers for home and field applications. Both TMB and o-D successfully detected chlorine. Chromatography paper proved to be the more efficient option among the two papers used as substrates for the reagents (TMB and o-D). It exhibited high retention capacity and high performance in terms of color transformation when reacting with HOCl, even after two months of storage.

Study on Pressure-dependent Growth Rate of Catalyst-free and Mask-free Heteroepitaxial GaN Nano- and Micro-rods on Si (111) Substrates with the Various V/III Molar Ratios Grown by MOVPE

  • Ko, Suk-Min;Kim, Je-Hyung;Ko, Young-Ho;Chang, Yun-Hee;Kim, Yong-Hyun;Yoon, Jong-Moon;Lee, Jeong-Yong;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.180-180
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    • 2012
  • Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

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Fabrication of Poly Seed Layer for Silicon Based Photovoltaics by Inversed Aluminum-Induced Crystallization (역 알루미늄 유도 결정화 공정을 이용한 실리콘 태양전지 다결정 시드층 생성)

  • Choi, Seung-Ho;Park, Chan-Su;Kim, Shin-Ho;Kim, Yang-Do
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.190-194
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    • 2012
  • The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.