• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.599-602
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• 2008

Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.143-148
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• 2002

Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Journal of Information Display
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• v.9 no.4
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• pp.6-10
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• 2008

In this study, the selective-wettability-inscription (SWI) technique for the wet-etchingless fabrication of surface microstructures applicable to wide-viewing liquid crystal displays (LCDs) on plastic substrates was demonstrated. On the basis of the selective wetting of the photopolymer, the bi-level microstructures were spontaneously formed to serve as spacers for maintaining uniform cell gap and protrusions for the generation of multi-domains. The LC cell that has bi-level microstructures shows good extinction in the field-off state and a wide-viewing property in the field-on state. The SWI technique would be useful for the fabrication of flexible displays on plastic substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• 순환기질환의공학회:학술대회논문집
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• 2004.11a
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• pp.15-16
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• 2004

In summary, we have demonstrated soft lithographic application of HA (or polysaccharides in general) by means of ${\mu}CP$ and molding and constructed well-defined patterns of proteins and cells of various substrates including glass, silicon dioxides, poly(HEMA), polystyrene culture dishes, and biodegradable PLGA. These results suggest that HA could be used as a general platform on hydrophilic substrates.

• ETRI Journal
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• v.19 no.1
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of the Korean Chemical Society
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• v.19 no.4
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• pp.240-245
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• 1975

Substituent effects of benzyl substrates for the reaction of substituted benzyl(Z) arenesulfonate(X) with dimethylanilines in (Y) acetone at $35^{circ}$ were studied. The interactions between Z and Y disappeared when changed from electron withdrawing group to releasing group in benzyl substrates. The disappearance of interactions between Z and Y infers change of mechanism from $S_N2 to S_N1$ in substituent Z.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1315-1322
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• 1994

In this study, stable PbTiO3 coating solution was prepared using diethanolamine(DEA) complexing agent and deposited on indium-tin oxide(ITO) coated glass substrate. Prepared thin films were dense and crack-free. Perovskite-type PbTiO3 thin films could be obtained above 50$0^{\circ}C$, while the films heat-treated above $650^{\circ}C$ showed undesired properties due to interface reactions between films and substrates and warpage phenomena of substrates. Measured maximum dielectric constant and loss tangent were found to be 144 and 0.0163 at 1 kHz, 55$0^{\circ}C$ heat-treatment, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.491-494
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• 2006

A number of research groups and companies have succeeded in employing various SLS schemes to create low defect-density Si films on glass substrates for making high performance TFTs. In this paper, we first point out that SLS can be utilized to just as effectively handle crystallization of thin Si films on polymer substrates, and then present preliminary results on high-performance circuits that are built using the materials.