• 한국전기전자재료학회논문지
• /
• 제18권10호
• /
• pp.909-916
• /
• 2005

The structural and electrical property of RF magnetron sputtered ZnO thin film have been studied as a function of RF power, substrate temperature, oxygen/argon gas ratio and film thickness at constant sputtering power, sputtering working pressure and target-substrate distance. To analyze a crystallo-graphic properties of the films, $\theta$/2$\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio. The resistivity of ZnO thin film(6000 ${\AA}$) rapidly increased with increasing oxygen ratio and the resistivity value of $9 {\ast} 10^7 {\Omega}cm$ was obtained at a working pressure of 10 mTorr with the same oxygen/argon gas ratio. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with the same oxygen/argon gas ratio showed the excellent roughness value of 28.7 ${\AA}$. With increase of the substrate temperature, The C-axis preferred orientation of ZnO thin film increases and the resistivity decreases due to deviation from the stoichiometric ZnO due to oxygen deficiency.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.53-56
• /
• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• 한국재료학회지
• /
• 제22권1호
• /
• pp.8-15
• /
• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• 공업화학
• /
• 제8권1호
• /
• pp.84-91
• /
• 1997

대기압하에서 수소를 첨가한 연소염장치를 이용하여 몰리브덴 기판 위에 다이아몬드 필름을 증착시켰다. 기판 온도의 증가에 따라 핵생성밀도가 증가하였으며, $1000^{\circ}C$ 이상에서는 흑연화되고 이것이 수소 원자에 의해 에칭되었다. $C_2H_2/O_2$ 유량비를 증가시킬수록 핵생성밀도는 증가하였지만 결정형태가 구형화되며 비정질카본이 많이 증착되었다. $H_2$를 첨가하면, 표면 활성도가 향상되어 다이아몬드 핵생성밀도가 증가되었으며, 비정질카본을 에칭시켜 우수한 결정성의 다이아몬드 필름을 얻을 수 있었다. 증착시간을 증가시키면 다이아몬드 필름의 두께가 증가하였다.

• 한국세라믹학회지
• /
• 제44권1호
• /
• pp.65-69
• /
• 2007

For self-developed alkali-alkaline earth-silicate and commercial glass melts for plasma display panel substrate, the corrosion behavior of fused casting refractory consisting of $Al_2O_3-ZrO_2-SiO_2$ was examined at the temperature corresponding to $10^2\;dPa{\cdot}s$ of melt viscosity by static finger methode. The corroded refractory specimens showed a typical concave shape due to interfacial convection of melts at their flux line. However, the corrosion thickness by commercial glass melts was $6\sim10$ times comparing to that by the self?developed melts. From the view point of the glass composition and the role of alkaline earth in glass network, it was discussed the effect of alkali/alkaline earth diffusion and temperature on the refractory corrosion.

• 연구논문집
• /
• 통권27호
• /
• pp.183-200
• /
• 1997

We have calculated the energy of three distinct grain configurations, namely completely connected, partially connected and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. "Stabilitl" diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness vs. equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.

• 한국전자파학회논문지
• /
• 제16권2호
• /
• pp.222-227
• /
• 2005

광대역에서 PCB 기판의 유전율은 개방 단말 동축선 프로브로 측정된 반사계수를 모멘트 방법에 적용하여 얻을 수 있다. 본 논문에서는 유전율과 반사계수의 관계를 적분식으로 나타내었고, 적분식에 사용되는 서로 다른 두께를 갖는 PCB 기판의 반사계수를 분산 FDTD로 수치 계산하였다. 적분식을 모멘트 방법을 사용하여 해석한 결과 PCB기판의 유전율은 최대 $2.015\%$의 오차 범위 안에서 환산됨을 알 수 있었다.

• 전자공학회논문지T
• /
• 제36T권2호
• /
• pp.8-13
• /
• 1999

본 논문은 MOSFET에서 2차원적 전위분포가 채널방향을 따라 준-선형적으로 변한다는 GCA(Gradual Channel Approximation)를 진성영역에서 수직 공핍층 폭이 준-선형적으로 변한다는 가정으로 대치하여 단채널 MOSFET에서도 적용 가능한 문턱전압의 해석적 모형을 제안하였다. 제안된 문턱전압 표현식은 유효 채널길이, 드레인전압, 기판(substrate) 바이어스 전압, 기판 도핑농도, oxide 두께 등에 대한 의존성을 통합적으로 나타내었으며, 계산된 결과는 BSIM3v3의 결과와 유사한 경향을 보이고 있다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2008년도 추계학술대회A
• /
• pp.30-34
• /
• 2008

The transfer assembly (or transfer printing) technique is a promising method for fabricating multi-scale structures on various substrates including semiconductors and polymers, and has been applied to fabrication of flexible devices with superior performance to conventional organic flexible devices. The mechanical behaviors of the structures fabricated by the transfer assembly is a very important information for design and reliability evaluation purpose, but the measurement of the behaviors is difficult since their critical-dimensions are very tiny. In this study, Au films with nano-scale thickness were fabricated on a silicon substrate and their mechanical properties were measured using micro-tensile test. The Au films on the silicon substrate were then transferred to a PDMS substrate using the transfer assembly technique. Self-assembled monolayer (SAM) with a thiol group was used to enhance the transfer of Au films, and the mechanical behaviors were characterized using wrinkle-based test. The test results from micro-tensile and wrinkle-based test are compared to each other, and their implication to the transfer assembly technique is discussed.

• 한국막학회:학술대회논문집
• /
• 한국막학회 2002년도 제15회 심포지움
• /
• pp.23-46
• /
• 2002

The cryogenic, pressure swing adsorption and membrane methods have been used to separate air into nitrogen and oxygen. The air separation membrane is made of the polymers, of which manufacturing process is complicate and it causes a little high production cost. Polymer membrane has temperature limit in usage and low durability even at moderate temperature. Therefore, inorganic membranes have been studied for years. As formation of unit alumino-silicate membrane, unit cells of membrane were made with a few coating methods. In this study the dipping of substrate into sols, application of vacuum to the opposite side of substrate with coating and rotating of the substrate in the sols were found as good coating memthods to make a uniform coating and to control the thickness of membrane. The membrane coats were examined by SEM and XRD. The sample ESZl-1 was compared with those of samples that prepared by another method. The present developed coating methods could be applied to the various types of zeolite membrane formation, that is A- X-, Y- ZSM- and MCM-types of membranes. Also these membrane forming methods could be applied to formation of catalyst absorbed zeolite membrane, of which zeolite absorb the catalytic metals. The product obtained from these coating methods could be applied to the industrial gas and liquid phase catalytic reaction and separation processes.