• 센서학회지
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• 제25권1호
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• pp.46-50
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• 2016

During KSTAR plasma experiments, torsional $Alfv\acute{e}n$ waves in the frequency of few GHz or below were detected. To understand this plasma waves during the crash of MHD instabilities, an RF spectrometer has been developed for detection of the radiated RF signals in the KSTAR Tokamak. It has the capability of broadband RF spectral measurement (50 ~ 400 MHz). To detect the broadband RF signals which are radiated from the KSTAR systems, a broadband antenna is the key feature of the RF spectrometer. In this paper, a broadband bowtie antenna for detection of $Alfv\acute{e}n$-waves in the KSTAR Tokamak is presented. Planar-type bowtie antenna is designed and fabricated on an FR4 substrate with thickness of 1.6 mm. The antenna consists of bowtie shaped balanced radiators and broadband planar balun. The antenna is designed to have an input impedance of 50 Ohm, and a taper-shaped balun is adopted for field and impedance matching between 50 Ohm transmission line to 110 Ohm feeding network of balanced radiators. The implemented antenna provides around -3 to 3 dBi of gain for the whole frequency band. The VSWR of the bowtie antenna is less than 12:1 over the frequency bandwidth of 50 to 2000 MHz.

• 센서학회지
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• 제25권6호
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• pp.383-387
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• 2016

Well-ordered nanocolumnar indium oxide ($In_2O_3$) thin films have been successfully fabricated by glancing angle deposition (GAD) using an e-beam evaporator. Nanocolumnar structures have a porous and large surface area with a narrow neck between nanocolumns, which allows them to detect minute amounts of gases. The nanocolumnar $In_2O_3$ thin films were fabricated by the GAD process at five different positions, viz. top, bottom, center, left, and right in a four inch substrate holder. There was a divergence in the thickness and the base resistance of each sensor. However, all the sensors exhibited extremely high sensitivity that was greater than $10^3$ times the change in electrical resistance after being exposed to 50 ppm of acetone gas at $300^{\circ}C$. Furthermore, the nanocolumnar $In_2O_3$ sensors displayed an extremely low detection limit (1.2 ppb) in dry atmosphere as well as in high humidity (80%). We demonstrated that the GAD nanocolumnar $In_2O_3$ sensors have an enormous potential for many applications owing to their particularly simple and reliable fabrication process.

• 센서학회지
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• 제15권4호
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• pp.237-244
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• 2006

Atomic force microscope (AFM) has become a common tool for the structural and physical studies of biological macromolecules, mainly because it provides the ability to perform experiments with samples in a buffer solution. In this study, structure of proteins and nucleic acids has been studied in their physiological environment that allows native intermolecular complexes to be formed. Cr and Au were deposited on p-Si (100) substrate by thermal evaporation method in sequence with the thickness of $200{\AA}$ and $500{\AA}$, respectively, since Au is adequate for immobilizing biomolecules by forming a self-assembled monolayer (SAM) with semiconductor-based biosensors. The SAM, streptavidin and biotin interacted each other with their specific binding energy and their adsorption was analyzed using the Bio-AFM both in a solution and under air environment. A silicon nitride tip was used as a contact tip of Bio-AFM measurement in a solution and an antimony doped silicon tip as a tapping tip under air environment. Actual morphology could also be obtained by 3-dimensional AFM images. The length and agglomerate size of biomolecules was measured in stages. Furthermore, $R_{a}$ (average of surface roughness) and $R_{ms}$ (mean square of surface roughness) and surface density for the adsorbed surface were also calculated from the AFM image.

• 한국정보통신학회논문지
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• 제8권3호
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• pp.686-693
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• 2004

WCDMA용 SAW 필터를 제작하기 위하여 mathematica package를 이용한 모의 실험기를 개발하였으며, 전극재료로는 Al-Cu를 사용하였다. 모의실험한 자료를 바탕으로 전극에서 발생하는 ultimate rejection을 줄이기 위해 SFIT형태의 필터를 설계 및 제작하였다. 회절에 의한 현상을 최소화하기 위해 필터의 입력단은 block weighted IDT 형태로, 출력단은 withdrawal weighted IDT형태로 구성하였다. Langasite 기판위에 형성시킨 입 출력 빗살무늬 변환기 전극 수는 50쌍, 두께와 폭은 5000$\AA$와 1λ4(((equation omitted) 3.6$\mu\textrm{m}$)로 하였으며, IDT 전극 폭과 전극간격 은 각각 1λ/16와 1λ/8로 하였다. 제작한 SAW 필터의 특성은 중심주파수는 190MHz, 통과대역은 4MHz이며 저지대역은 -60dB이하로 측정되었다.

• 한국정보통신학회논문지
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• 제18권10호
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• pp.2359-2366
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• 2014

본 논문에서는 S-대역에서 동작하는 구형 마이크로스트립 패치 안테나의 인셋 급전 구조에 대해 연구하였다. 인셋 급전 구조에서 인셋의 길이와 폭의 변화에 따른 안테나의 반사손실 특성을 조사하였고, 결과로부터 최적 인셋 급전 안테나를 설계하고, 이득 및 복사패턴을 구하였다. 2.3 GHz에서 최적화된 안테나의 패치 크기는 $45.0mm{\times}40.9mm$, 인셋의 길이는 14 mm, 인셋의 폭은 1 mm이다. 그리고 유전율이 2.5, 두께가 0.787 mm인 기판을 사용하였으며, HFSS를 이용하여 시뮬레이션을 하였다. 인셋 급전 안테나를 제작하여 반사손실을 측정한 결과, 2.3025 GHz에서 -21.11 dB로 이론 결과와 일치함을 알 수 있었다.

• 한국산학기술학회논문지
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• 제14권3호
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• pp.1445-1450
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• 2013

본 논문에서는 1.7-2.7 GHz 대역에서 동작하는 이동통신 기지국용 광대역 직렬 급전 보우타이 다이폴 쌍(series-fed bow-tie dipole pair; SBDP) 안테나를 제안하였다. 기존의 직렬 급전 다이폴 쌍(series-fed dipole pair; SDP) 안테나에서 사용하는 직선 스트립 다이폴 소자 대신에, 제안된 안테나는 보우타이 모양의 다이폴 소자를 사용하였다. 시뮬레이션 분석 결과, 양 끝으로 벌어진 각도가 증가할수록 안테나의 가장 낮은 동작 주파수가 저주파수 대역으로 이동하였으며, 이를 이용하여 저주파수 대역으로 이동한 만큼 다이폴 소자의 길이를 줄일 수 있다. 양 끝으로 벌어진 각도가 10도인 SBDP 안테나를 FR4 기판(비유전율 4.4, 두께 1.6 mm) 상에 제작하였고, SDP 안테나와 비교하여 폭이 10% 줄어들었다. 제작된 SBDP 안테나를 측정한 결과, 전압 정재파비(voltage standing wave ratio; VSWR)가 2 이하인 임피던스 대역폭은 48.8% (1.69-2.78 GHz), 이득은 5.8-6.3 dBi, 전후방비는 14-17 dB이다.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1106-1115
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• 2006

본 논문은 다층기판으로 구현된 마이크로스트립 전송선로와 여기에 결합된 결함접지구조의 초고주파 특성 및 모델링에 대하여 기술하고 있다. 단층 마이크로스트립 전송선로와 결함접지구조를 지닌 기본형 구조에, 제 2의 유전체 층을 결함접지구조가 있는 바닥 접지면 아래에 적층하여 다층기판 속의 결함접지구조를 형성하였다. 그리고 제2의 유전체 층의 유전율과 두께를 서로 달리해 가면서 초고주파 전송특성을 보고 추가된 유전체 층에 의한 등가회로의 변화를 등가회로 모델링을 통하여 분석하였다. 본 논문에서 제안된 방법에 따르면 적층된 제 2의 유전체 층에 의한 등가회로의 변화를 따로 확인할 수 있어서 추후 초고주파 회로에 유익하게 응용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.141-142
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.