• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Applied Chemistry for Engineering
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• v.8 no.1
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• pp.84-91
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• 1997

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of $H_2$. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above $1000^{\circ}C$, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the $C_2H_2/O_2$ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of $H_2$, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.65-69
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• 2007

For self-developed alkali-alkaline earth-silicate and commercial glass melts for plasma display panel substrate, the corrosion behavior of fused casting refractory consisting of $Al_2O_3-ZrO_2-SiO_2$ was examined at the temperature corresponding to $10^2\;dPa{\cdot}s$ of melt viscosity by static finger methode. The corroded refractory specimens showed a typical concave shape due to interfacial convection of melts at their flux line. However, the corrosion thickness by commercial glass melts was $6\sim10$ times comparing to that by the self?developed melts. From the view point of the glass composition and the role of alkaline earth in glass network, it was discussed the effect of alkali/alkaline earth diffusion and temperature on the refractory corrosion.

• 연구논문집
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• s.27
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• pp.183-200
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• 1997

We have calculated the energy of three distinct grain configurations, namely completely connected, partially connected and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. "Stabilitl" diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness vs. equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.222-227
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• 2005

The permittivity profile of PCB substrate in a wide bandwidth is obtained by applying the moment method to the reflection coefficients measured by an open-ended coaxial probe. In this paper, the relation between a reflection coefficients and the corresponding permittivity is expressed into an integral form and the reflection coefficient of PCB substrates with different thickness are calculated using the dispersive FDTD method. The simulation results assure the validity of our conversion procedure within $2.015\%$ error.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.8-13
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• 1999

In this paper, an analytical threshold voltage model is proposed by replacing the conventional GCA(Gradual Channel Approximation) with the assumption that a normal depletion layer width in the intrinsic region will vary quasi-linearly according to the channel direction. Derived threshold voltage expression is written as a function of the effective channel length, drain voltage, substrate bias voltage, substrate doping concentration, and the oxide thickness. Calculated results show almost similar trends with BSIM3v3's results in a satisfactory accuracy.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.30-34
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• 2008

The transfer assembly (or transfer printing) technique is a promising method for fabricating multi-scale structures on various substrates including semiconductors and polymers, and has been applied to fabrication of flexible devices with superior performance to conventional organic flexible devices. The mechanical behaviors of the structures fabricated by the transfer assembly is a very important information for design and reliability evaluation purpose, but the measurement of the behaviors is difficult since their critical-dimensions are very tiny. In this study, Au films with nano-scale thickness were fabricated on a silicon substrate and their mechanical properties were measured using micro-tensile test. The Au films on the silicon substrate were then transferred to a PDMS substrate using the transfer assembly technique. Self-assembled monolayer (SAM) with a thiol group was used to enhance the transfer of Au films, and the mechanical behaviors were characterized using wrinkle-based test. The test results from micro-tensile and wrinkle-based test are compared to each other, and their implication to the transfer assembly technique is discussed.

• Proceedings of the Membrane Society of Korea Conference
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• 2002.04a
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• pp.23-46
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• 2002

The cryogenic, pressure swing adsorption and membrane methods have been used to separate air into nitrogen and oxygen. The air separation membrane is made of the polymers, of which manufacturing process is complicate and it causes a little high production cost. Polymer membrane has temperature limit in usage and low durability even at moderate temperature. Therefore, inorganic membranes have been studied for years. As formation of unit alumino-silicate membrane, unit cells of membrane were made with a few coating methods. In this study the dipping of substrate into sols, application of vacuum to the opposite side of substrate with coating and rotating of the substrate in the sols were found as good coating memthods to make a uniform coating and to control the thickness of membrane. The membrane coats were examined by SEM and XRD. The sample ESZl-1 was compared with those of samples that prepared by another method. The present developed coating methods could be applied to the various types of zeolite membrane formation, that is A- X-, Y- ZSM- and MCM-types of membranes. Also these membrane forming methods could be applied to formation of catalyst absorbed zeolite membrane, of which zeolite absorb the catalytic metals. The product obtained from these coating methods could be applied to the industrial gas and liquid phase catalytic reaction and separation processes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.