• KSTLE International Journal
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• v.6 no.2
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• pp.39-44
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• 2005

Friction and wear properties of the Boron carbide ($B_{4}C$) coating 100 nm thickness were studied under various relative humidity (RH). The boron carbide film was deposited on silicon substrate by DC magnetron sputtering method using $B_{4}C$ target with a mixture of Ar and methane ($CH_4$) as precursor gas. Friction tests were performed using a reciprocation type friction tester at ambient environment. Steel balls of 3 mm in diameter were used as counter-specimen. The results indicated that relative humidity strongly affected the tribological properties of boron carbide coating. Friction coefficient decreased from 0.42 to 0.09 as the relative humidity increased from $5\%$ to $85\%$. Confocal microscopy was used to observe worn surfaces of the coating and wear scars on steel balls after the tests. It showed that both the coating surface and the ball were significantly worn-out even though boron carbide is much harder than the steel. Moreover, at low humidity ($5\%$) the boron carbide showed poor wear resistance which resulted in the complete removal of coating layer, whereas at the medium and high humidity conditions, it was not. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses were performed to characterize the chemical composition of the worn surfaces. We suggest that tribochemical reactions occurred during sliding in moisture air to form boric acid on the worn surface of the coating. The boric acid and the tribochemcal layer that formed on steel ball resulted in low friction and wear of boron carbide coating.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.783-791
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• 1994

Piezoelectric ZnO thin films were deposited on 7059 glass substrate by rf magnetron sputtering. The effects of deposition parameter, such as rf power, gas pressure and $O_{2}$/Ar gas ratio, on the crystallinity and electrical properties of the deposited ZnO thin films were studied. It was found that the deposition rate was higher than the previously reported values. ZnO films were suitable for SAW filter since a standard deviation of XRD (002) peak rocking curve was less than $6^{\circ}$. ZnO thin films, which were deposited at $O_{2}$/Ar ratio larger than 25%, showed high resistance. SAW filter was fabricated using ZnO film, of which thickness was 0.25 of the wavelength of the propatating surface acoustic wave. The measured frequency response was consistent with the calculated one. The SAW filter had center frequency 39.08 MHz, phase velocity 2501 m/sec and insertion loss 29 dB.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.359-361
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• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4095-4100
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• 2011

In this paper, a log periodic bow-tie dipole array (LPBDA) antenna for UWB communications is investigated. Bow-tie shaped dipole elements are used instead of general dipole elements for LPDA antennas and the input reflection coefficient and realized gain characteristics of the LPBDA as a function of a flare angle are analyzed. It turns out that as the flare angle of the bow-tie dipole elements is increased, the lowest operating frequency is shifted toward lower frequency and the operating frequency band is increased, but the average gain is decreased. However, the gain variation of the LPBDA is much decreased and the front-back ratio is improved compared to the LPDA. Standard LPDA and LPBDA with a flare angle of 13 degrees are fabricated on an FR4 substrate with a dielectric constant of 4.4 and a thickness of 1.6 mm. Measured gain for the LPDA ranges from 4 to 6.5 dBi at 3.1 to 10.6 GHz band, while that for the LPBDA is in the range of 4.2 to 5 dBi.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.184-190
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• 2004

A feedforward linear power amplifier (FLPA) has been developed for UHF-band RFID reader applications. The main and error amplifiers are composed of a 2 stage so that linearity of the FLPA can be improved. The FLPA has been implemented on an FR-4 substrate (Er=4.7 and thickness=0.8 mm) with 3-dB and 10-dB hybrid couplers for input/output power divider and combiner. For 2-tone measurement (input level=-11 dBm at $f_1$=915 MHz and $f_2$=916 MHz), the FLPA exhibits a -18.52 dBm of $IMD_3$, which indicates that $IMD_3$ cancellation with feedforward loop is more than 27 dB. From 890 to 960 MHz, 1-dB gain compression output power and power gain of the FLPA are higher than 30 dBm and 40 dB, respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2374-2381
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• 2007

.We have studied to obtain the properly conditions about impedance matching of the SAW filter for the SPUDT type and the bidirectional transducer type later. And we have studied to obtain the SAW filter for the Slanted Finger Interdigital Transducer(SFIT), was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator In case the SPUDT, we have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000{\AA}$ and $3.6{\mu}m$, respectively. And the of the bidirectional transducer, the width of IDT' fingers and the space between IDT' finger and reflector is $1.8{\mu}m$, respectively. Also, we have performed to series connected the SPUDT type with the bidirectional transducer type filter. The frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bahdwidth at the 3dB is probably 5.3MHz after when we have matched impedance. Also, we could obtain that ripple characteristics is less than 0.3dB and insert loss is probably -20dB after when we have matched impedance.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1130-1135
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• 2010

Cu/carbon nano-particle hybrids were fabricated through the cathodic electrophoretic deposition (EPD) process. CNT and CNF nano-particles were modified to give positive charges by polyethyleneimine (PEI) treatment before depositing them on the substrate. Since a Cu plate was used as an anode in the EPD process, Cu particles were also deposited along with the carbon nano-particles. Experimental observation showed the nano-hybrids constructed a novel formicary-like nano-structure which is strong and highly conductive. Utilizing the hybrids, carbon fiber composites were manufactured, and their electrical conductivity and interlaminar shear strength were measured. In addition, the deposition morphology and failure surface were examined by SEM observations. Results demonstrated that the electrical conductivities in the through-the-thickness direction and the interlaminar shear strength significantly increased by 350~2100% and 14%, respectively.