• Journal of the Korea Institute of Information and Communication Engineering
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• 제8권4호
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제8권4호
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• pp.886-893
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• 2004

In this paper, active resonator oscillator using active band pass filter with gain, active resonator with negative resistance using transistor(agilent ATF-34143) is designed and fabricated. Proposed active resonator oscillator for local oscillator in ISM band(5.8GHz) is designed with 5.5 GHz oscillation frequency. Designed active resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. Active resonator oscillators using active band pass filter with gain show the oscillation frequency of 5.6GHz with the output power of -2dBm and phase noise of -81dBc/Hz at the offset frequency of 100kHz. Active resonator oscillators active resonator with negative resistance show the oscillation frequency of 5.6, 5.8GHz with the output power of -4dBm and phase noise of -91dBc/Hz at the offset frequency of 100kHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제7권8호
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.29-30
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• 2001

This paper presents some results of plasma nitriding on hard chromium deposit. The substrates were C45 steel and $30~50{\;}\mu\textrm{m}$ of chromium deposit by electroplating was formed. Plasma nitriding was carried out in a plasma nitriding system with $95NH_3{\;}+{\;}SCH_4$ atmosphere at the pressure about 600 Pa and different temperature from $450^{\circ}C{\;}to{\;}720^{\circ}C$ for various time. Optical microscopy and X-ray diffraction were used to evaluate the characteristics of surface nitride layer formed by nitrogen diffusion from plasma atmosphere inward iCr coating and interface carbide layer formed by carbon diffusion from substrate outward Cr coating. The microhardness was measured using microhareness tester at the load of 100 gf. Corrosion resistance was evaluated using the potentiodynamic measurement in 3.5% NaG solution. A saturated calomel electrode (SiCE) was used as the reference electrode. Fig.1 shows the typical microstructures of top surface and cross-section for nitrided and unnitrided samples. Aaer plasma nitriding a sandwich structure was formed consisting of surface nitride layer, center chromium layer and interface carbide layer. The thickness of nitride and carbide layers was increased with the increase of processing temperature and time. Hardness reached about 1000Hv after nitriding while 900Hv for unnitrided hard chromium deposit. X-ray diffraction indicated that surface nitrided layer was a mixture of $Cr_2N$ and CrN at low temperature and erN at high temperature (Fig.2). Anodic polarization curves showed that plasma nitriding can greatly improve the corrosion resistance of chromium e1ectrodeposit. After plasma nitriding, the corrosion potential moved to noble direction and passive current density was lower by 1 to 4 orders of magnitude compared with chromium deposit(Fig.3).

• Electrical & Electronic Materials
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• 제7권3호
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.154-157
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• 2003

$TiO_2$ thin films were fabricated by RF magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G${\cdot}$C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; 360~370[nm), grain size; 40[nm], gap between two peak binding energy; $5.8{\pm}0.05[eV]$ ($2_{p3/2}$ peak and $2_{p1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05[eV]$, optical energy band gap; 3.4[eV].

• Proceedings of the KIEE Conference
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• Journal of Sensor Science and Technology
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• 제25권1호
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• pp.46-50
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• 2016

During KSTAR plasma experiments, torsional $Alfv\acute{e}n$ waves in the frequency of few GHz or below were detected. To understand this plasma waves during the crash of MHD instabilities, an RF spectrometer has been developed for detection of the radiated RF signals in the KSTAR Tokamak. It has the capability of broadband RF spectral measurement (50 ~ 400 MHz). To detect the broadband RF signals which are radiated from the KSTAR systems, a broadband antenna is the key feature of the RF spectrometer. In this paper, a broadband bowtie antenna for detection of $Alfv\acute{e}n$-waves in the KSTAR Tokamak is presented. Planar-type bowtie antenna is designed and fabricated on an FR4 substrate with thickness of 1.6 mm. The antenna consists of bowtie shaped balanced radiators and broadband planar balun. The antenna is designed to have an input impedance of 50 Ohm, and a taper-shaped balun is adopted for field and impedance matching between 50 Ohm transmission line to 110 Ohm feeding network of balanced radiators. The implemented antenna provides around -3 to 3 dBi of gain for the whole frequency band. The VSWR of the bowtie antenna is less than 12:1 over the frequency bandwidth of 50 to 2000 MHz.

• Journal of Sensor Science and Technology
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• 제25권6호
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• pp.383-387
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• 2016

Well-ordered nanocolumnar indium oxide ($In_2O_3$) thin films have been successfully fabricated by glancing angle deposition (GAD) using an e-beam evaporator. Nanocolumnar structures have a porous and large surface area with a narrow neck between nanocolumns, which allows them to detect minute amounts of gases. The nanocolumnar $In_2O_3$ thin films were fabricated by the GAD process at five different positions, viz. top, bottom, center, left, and right in a four inch substrate holder. There was a divergence in the thickness and the base resistance of each sensor. However, all the sensors exhibited extremely high sensitivity that was greater than $10^3$ times the change in electrical resistance after being exposed to 50 ppm of acetone gas at $300^{\circ}C$. Furthermore, the nanocolumnar $In_2O_3$ sensors displayed an extremely low detection limit (1.2 ppb) in dry atmosphere as well as in high humidity (80%). We demonstrated that the GAD nanocolumnar $In_2O_3$ sensors have an enormous potential for many applications owing to their particularly simple and reliable fabrication process.

• Journal of Sensor Science and Technology
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• 제15권4호
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• pp.237-244
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• 2006

Atomic force microscope (AFM) has become a common tool for the structural and physical studies of biological macromolecules, mainly because it provides the ability to perform experiments with samples in a buffer solution. In this study, structure of proteins and nucleic acids has been studied in their physiological environment that allows native intermolecular complexes to be formed. Cr and Au were deposited on p-Si (100) substrate by thermal evaporation method in sequence with the thickness of $200{\AA}$ and $500{\AA}$, respectively, since Au is adequate for immobilizing biomolecules by forming a self-assembled monolayer (SAM) with semiconductor-based biosensors. The SAM, streptavidin and biotin interacted each other with their specific binding energy and their adsorption was analyzed using the Bio-AFM both in a solution and under air environment. A silicon nitride tip was used as a contact tip of Bio-AFM measurement in a solution and an antimony doped silicon tip as a tapping tip under air environment. Actual morphology could also be obtained by 3-dimensional AFM images. The length and agglomerate size of biomolecules was measured in stages. Furthermore, $R_{a}$ (average of surface roughness) and $R_{ms}$ (mean square of surface roughness) and surface density for the adsorbed surface were also calculated from the AFM image.