• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.1-6
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• 2007

In order to raise productivity of the OLED and realization of the OLED TV, the enlargement of the mother glass substrate is required. The large-size glass substrate has some difficulties regarding its deflection during handling operation due to its thin thickness (0.5$\sim$0.7t) which is not even enough to stand its mass itself. This paper is demonstrating a new solution of this difficult through clamping and bending boundary condition, which helps to minimize the deflection of the glass substrate. Based on the developed method, the experiments had been done for verifying the proposed method to minimize the glass-deflection. With the developed method, the new design of glass substrate handler can be proposed to allow the large OLED displays be manufactured.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.12
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• pp.28-32
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• 2015

In this work, we reported fabrication of sealing the glass substrate using laser treatment at low temperature for electrochemical luminescence (ECL) cell. The laser treatment at temperature is using laser diode. The glass substrate sealing by laser treatment tested at 3-10W, 2-5 mm/s for build and tested. The sealing laser treatment method will allow associate coordination between the two glass substrate was enclosed. The effect of laser treatment to sealing the glass substrate was found to have cracks and air gap at best thickness of about 550-600 im for condition 3 W, 3 mm/s. The surface of sealing was roughness which was not influent to electrodes It can reduce the cracks, crevices and air gaps as well, improves the performance viscosity in butter bus bar electrodes. Therefore, it is more effective viscosity between two FTO glasses substrate.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.8
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• pp.67-78
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• 2009

Radiation characteristics of microstrip patch antennas integrated with mushroom-like EBG structures in all directions and length direction on a substrate with the relative dielectric constant of 10 are systematically analyzed. As the substrate thickness increases, the effect of the surface wave on the input impedance and radiation pattern of a patch antenna increases. The effect of EBG structures on the input impedance of a patch antenna is negligible when the distances between EBG structures and the center of a patch antenna are 0.4 ${\gamma}_0$, 0.2 ${\gamma}_0$ and 0.1 ${\gamma}_0$ for the substrate thickness of 3.2 mm, 1.6 mm and 0.8 mm, respectively. The forward radiation is improved due to the suppression of surface wave when the periods of EBG structures integrated are larger than 2, 2, 3 periods for the substrate thickness of 3.2 mm, 1.6 mm and 0.8 mm, respectively. The effects of EBG structures on the radiation characteristics of a patch antenna integrated with EBG structures in all directions and length direction are similar.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.300-305
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• 1998

Crystallinity and structual properties of the epitaxially grown Pt films on $Al_2O_3$(0001) substrate by rf magnetron sputtering at a substrate temperature of $600^{\circ}C$ were studied by using backscattering spectrometry (BS)/channeling and transmission electron microscopy (TEM) measurements. $MeV^4$He ion BS/channeling results showed that the channeling minimum yield of Pt film with a thickness of 3500$\AA$ was 4%. This indicates an excellent crystallinity of Pt film. When the thickness of Pt film was less than 200 $\AA$, the channeling minimum yield of Pt film increased sharply with the decrease in film thickness. The Pt layer on $Al_2O_3$(0001) substrate grew epitaxially to the direction of (111) with six-fold symmetry. Cross-sectional TEM images also showed that Pt film on $Al_2O_3$(0001) substrate consist of twinned domains to release the strain induced by the lattice mismatch and the surface roughness of the film increased at the twin boundaries where the strain was contcentrated.

• Journal of the Korean Society for Nondestructive Testing
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• v.37 no.2
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• pp.75-83
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• 2017

In this paper, we investigate the capacity of the lock-in infrared thermography technique for the evaluation of non-uniform top layers of a silicon carbide coating with a nickel based superalloy sample. The method utilized a multilayer heat transfer model to analyze the surface temperature response. The modelling of the sample was done in ANSYS. The sample consists of three layers, namely, the metal substrate, bond coat and top coat. A sinusoidal heating at different excitation frequencies was imposed upon the top layer of the sample according to the experimental procedures. The thermal response of the excited surface was recorded, and the phase angle image was computed by Fourier transform using the image processing software, MATLAB and Thermofit Pro. The correlation between the coating thickness and phase angle was established for each excitation frequency. The most appropriate excitation frequency was found to be 0.05 Hz. The method demonstrated potential in the evaluation of coating thickness and it was successfully applied to measure the non-uniform top layers ranging from 0.05 mm to 1 mm with an accuracy of 0.000002 mm to 0.045 mm.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.43-47
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• 1996

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.171-177
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• 2021

This paper is concerned with the surface hardness measurement of NiP-coated AA7050 using different loads from 10 to 100 g. The surface hardness was observed to increase from 180 to 600 H_v with increasing NiP layer thickness, depending on the load applied for indentation. When NiP coating thickness is thinner than 2 ㎛, the surface hardness of NiP-coated AA7050 was mainly determined by AA7050 substrate, while it was significantly increased by NiP coating layer when NiP coating thickness is thicker than 2 ㎛. Hardness of AA7050 substrate itself was not dependent on the applied load but the hardness of NiP-coated AA7050 was largely influenced by the load applied for indentation. The largest difference of hardness between 10 g and 100g of applied loads, was obtained at the NiP thickness of about 8 ㎛ above which the measured hardness at 10 g reached a maximum value of about 600 H_v. It was also observed that indentation-induced plastic deformation next to the indented zone occurs when NiP layer is 5.64 times thicker than the depth of impression formed by indentation.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).