• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.938-945
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• 2003

We fabricated Ni-substrate for YBCO coated conductors and evaluated the effects of pressing and annealing temperature and time on texture. Ni substrate was fabricated by powder metallurgy technique and compacts were prepared by applying uniaxial or isostatic pressure. The texture of substrate made by applying cold isostatic pressure (CIP) was stronger than that by uniaxial pressure which we attribute to the fact that the CIP method provided higher density and more uniform density distribution. It was observed that the substrate annealed at 400 C showed both retained texture and recrystallized texture. On the other hand, the texture of substrate significantly improved at annealing temperature above 500 C, forming strong 4-fold symmetry, [111] II ND texture, and FWHM of 9∼10 . It is to be noted that the degree of texture was almost independent of annealing temperature (500∼1000 C) and annealing time(1∼54 min, at 1000 C). EBSD and AFM analysis indicated that 99% of grain boundaries was low angle grain boundary and RMS was approximately 3 nm, respectively. Development of strong cube texture and high fraction of low angle grain boundary of Ni-substrate made by powder metallurgy technique in our study is considered to be suitable for the application of YBCO coated conductors.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.55-58
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• 2003

We fabricated the textured Ni substrate and evaluated the effects of processing variables on microstructural evolution and texture transformation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(P/M) and plasma arc melting(PAM) The texture of the substrate was characterized by pole-figure and surface condition was evaluated by atomic force microscopy. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 800~120$0^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$~10$^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the FWHMs of in-plane texture was 9$^{\circ}$~13$^{\circ}$ at the temperature range. In addition, twin texture, (221)＜221＞, was formed as the temperature increased further. The grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.1-5
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• 2016

In this study, we have investigated the effect of the substrate temperature on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at various substrate temperature (room temperature ${\sim}400^{\circ}C$). IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $250^{\circ}C$ or more show crystalline structure having an (222) preferential orientation. The electrical resistivity of IGZO film increased with increasing temperature. The change of electrical resistivity with increasing temperature was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

• Journal of Industrial Technology
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• v.39 no.1
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• pp.7-14
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• 2019

Carbon nanotubes (CNT) on metal substrates are definitely beneficial because they can maintain robust mechanical stability and high conductivity between CNT and metal interfaces. Here, we report direct growth of CNT on Ni-based superalloy, Inconel 600, using thermal chemical vapor deposition (CVD) with acetylene feedstock in the growth temperature range of $400-725^{\circ}C$. Furthermore, we studied the effect of substrate pretreatment on the growth yield enhancement and growth temperature decrease of CNT on Inconel 600. Activation energy (AE) for CNT growth was estimated from the CNT height change with respect to the growth temperature. The AE values significantly decreased from 205.03 to 24.35 kJ/mol by the pretreatment of thermal oxidation of Inconel substrate at $725^{\circ}C$ under ambient. Higher oxidation temperature tends to have lower activation energy. The results have shown the importance of pretreatment temperature on CNT growth yield and growth temperature decrease.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1474-1476
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• 2005

ZnO:Al(AZO) has been investigated for the photovoltaic cell or TCO(Transparent Conductive Oxide) of the display, because it has good electrical and optical properties. In this study, the ZnO:Al(AZO) thin film prepared on variation of substrate temperature by FTS(Facing Targets Sputtering) system. In case of TCO, because resistivity and roughness values affect the lighting of the OLED, their factors are very important. Therefore, in this paper, the electrical and optical properties of the AZO thin film were investigated with the deposition conditions and its roughness was investigated on variation of the substrate temperature. In results, AZO thin film deposited with the transmittance over 80% and the resistivity was reduced from $1.36{\times}10^{-3}$ [O-cm] to $4{\times}10^{-4}$ [O-cm] with increasing the substrate temperature from R.T to $200[^{\circ}C]$. Especially, we could obtain the resistivity $4{\times}10^{-4}$ [O-cm] of AZO thin film prepared at working pressure 1[mTorr], input current 0.4[A] and substrate temperature $200[^{\circ}C]$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.