• Journal of Korea Foundry Society
• /
• v.31 no.2
• /
• pp.83-86
• /
• 2011

Ni-Al based intermetallic compounds of self-propagating high-temperature synthesis (SHS) by the heat of molten aluminum and been coated on the aluminum casting alloy. The effects of the pouring temperature in casting and the thickness of casting substrate on SHS of the coating layer have been investigated. The experimental result showed that the reaction of the coating layer was activated with increasing the pouring temperature in casting and the thickness of casting substrate. However, the aluminum substrate was re-melted by the heat of formation for intermetallic compounds. Then, it was considered that some mechanical or thermal treatments for elemental powder mixtures were required to control the heat of formation for intermetallic compounds in advance.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.64 no.4
• /
• pp.277-280
• /
• 2015

In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $300^{\circ}C$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $250^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2003.10a
• /
• pp.42-44
• /
• 2003

The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.331-334
• /
• 1998

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.91-94
• /
• 1997

$\alpha$-sexithienyl($\alpha$-6T) thin films were deposited by Organic Molecular Beam Deposition(OMBD) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature. and vacuum pressure an the formation of these films have been studied. The molecular orientations of $\alpha$-6T films were investigated with the polarized electronic absorption spectroscopy. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The film deposited at an elevated substrate temperature (~9 $O^{\circ}C$) showed higher conductivity than the film deposited at room temperature.

• Electrical & Electronic Materials
• /
• v.9 no.5
• /
• pp.445-449
• /
• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.694-698
• /
• 2002

Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 1999.02a
• /
• pp.26-29
• /
• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.715-722
• /
• 1994

Off-axis supttering using shielder was used to efficiently prevent negative oxygen ions from resputtering deposited films. In this method, the substrate was located vertically to the target and shielded by the semicircled steel plate. By using this method, the resputtering could be reduced, and 2223 high-Tc phase could be formed at the lower substrate temperature and in the broader temperature region. As increasing the substrate temperature, 2212, 2223, 2212 superconducting phases were formed by turns. 2223 phase was formed above 2$\times$10-2 torr, and 2212 phase was formed above 4$\times$10-2 torr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.108-111
• /
• 2000

The Zns thin films were deposited on non-alkali glass substrate by the Hot Wall method. The thin films grown at various evaporation cell and substrate temperature were characterized by spectrophotometer and X-ray diffraction to investigate the optical and structural characteristics. The deposition rates were increased with increasing the cell temperature, and were decreased with increasing substrate. The optical characteristics of thin films depends on the deposition rates. The band gap energies measured at room temperature with 3.4~3.5eV are smaller than the theoretical value of 3.54eV. All ZnS thin films are oriented in (111) of the principal direction of a zincblende structure.