• Journal of Practical Agriculture & Fisheries Research
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• v.11 no.1
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• pp.159-171
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• 2009

Required total substrates amounts for mushroom production are 212,186M/T in Korea. 80% of these total substrates amounts, 169,748 M/T is used for main substrates. Also 20%of these total substrates amounts, 42,438 M/T is used for additives. Main substrates 169,748 M/T is composed of sawdust, waste cotton, cotton seed hull, straw and com cob etc.. Additives 42,438 M/T is composed of rice bran, wheat bran and beet pulp etc. In the mushroom management, the cost of substrates purchase is composed for the most of management. Substrates amount is limited to supply, and the demand of mushroom substrates is on the increase continuously. So there is nothing but the cost of substrates are raising. Therefore the most important thing must develop the cheap substrates for the mushroom production.

• Microbiology and Biotechnology Letters
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• v.20 no.1
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• pp.79-84
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• 1992

The Photosynthetic bacterium, Rhodopseudomonas sphaeroides strain B6 was irnmobilized on agar gel. The optimum concentration of agar for hydrogen production was 2% (w/v). Maximum rates of hydrogen production by immobilized (300 ml of gel; 2.85 rng dry cells/ml) and free cells (1l culture; 0.87 mg dry cells/ml) were 47.5 and 48.0 ml/hr/culture, respectively. However, when both cultures were fed by 10 mmoles of lactate as limited electron donor at the later period of incubation, the activity of hydrogen production by free cells was significantly decreased but, immobilized cells continued hydrogen production with almost the same initial rate. Wc examined hydrogen production by immobilized cells of strain B6 under periodic illumination for 12 hr-intervals. When the culture was periodically fed by basal medium containing 9.3 rnmoles of DL-lactate and 1.86 mmoles of L-glutamate as consumed electron donor and nitrogen source, respectively, for every one liter of hydrogen produced, hydrogen was evolved continuously with the average rate of 510 ml/day/300 ml gel (2.9 rng dry cellslml) during the incubation time for 228 hr.

• Transactions of the Korean hydrogen and new energy society
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• v.31 no.1
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• pp.23-32
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• 2020

The intermittent characteristics of renewable energy complicates the process of balancing supply with demand. Electrolysis technology can provide flexibility to grid management by converting electricity to hydrogen. Alkaline electrolysis has been recognized as established technology and utilized in industry for over 100 years. However, high overpotential of oxygen evolution reaction in alkaline water electrolysis reduces the overall efficiency and therefore requires the development of anode catalyst. In this study, Raney Ni-Zn-Fe electrode was prepared by electroplating and the electrode characteristics was studied by varying electroplating parameters like electrodeposition time, current density and substrate. The prepared Raney Ni-Zn-Fe electrode was electrochemically evaluated using linear sweep voltammetry. Physical and chemical analysis were conducted by scanning electron microscope, energy dispersive spectrometer, and X-ray diffraction. The plating time did not changed the morphology and composition of the electrode surface and showed a little effect on overpotential reduction. As the plating current density increased, Fe content on the surface increased and cauliflower-like structure appeared on the electrode surface. In particular, the overpotential of the electrode, which was prepared at the plating current density of 320 mA/㎠, has showed the lowest value of 268 mV at 50 mA/㎠. There was no distinguishable overpotential difference between the type of substrate for the electrodes prepared at 80 mA/㎠.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Textile Coloration and Finishing
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• v.1 no.1
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• pp.7-18
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• 1989

The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

• Progress in Superconductivity
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• v.8 no.1
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• pp.81-86
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• 2006

We investigated resistance development in $Au/YBa_2Cu_3O_7(YBCO)$ thin film meander lines during high-power faults. The meander lines were fabricated by patterning 300 nm thick YBCO films coated with 200 nm thick gold layers into meander lines. A gold film grown on the back side of the substrate was also patterned into a meander line. The front meander line was connected to a high-power fault-test circuit and the back line to a DC power supply. Resistance of both lines was measured during the fault. They were immersed in liquid nitrogen during the experiment. Behavior of the resistance development prior to quench completion could be understood better by comparing resistance of the front meander lines with that of the back. Quench completion point could be determined clearly. Resistance and temperature at the quench completion point were not affected by applied field strength. The experimental results were analyzed quantitatively with the concept of heat transfer within the meander lines/substrate and to the surrounding liquid nitrogen. In analysis, the fault period was divided into three regions: flux-flow region, region prior to quench completion, and region after quench completion. Resistance was calculated for each region, reflecting the observation for quench completion. The calculated resistance in three regions was joined seamlessly and agreed well with data.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• Ocean and Polar Research
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• v.30 no.4
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• pp.509-518
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• 2008

Distribution of bacterial abundance and production was investigated in seawater around Saemangeum dike 7 times during March, $2007{\sim}July$, 2008. In the inner area of the dike, salinity variation was great due to river runoff from Mangyung and Dongjin Rivers and high chlorophyll a (chl a) concentrations up to $124.3{\mu}g\;l^{-1}$ was found. In the outer area of the dike, salinity was higher than in the inner area of the dike, and chl a was lower up to 10 times than in the inner area of the dike. Thus, the area of Saemangeum showed meso- to hypereutrophic conditions. Bacterial abundance and production ranged from 0.3 to $4.3{\times}10^9\;cells\;l^{-1}$ and from 5.2 to $570 pmol\;l^{-1}h^{-1}$ in outer area of the dike, respectively, while in the inner area of the dike bacterial abundance and production was 3 to 4 times higher ($0.4{\sim}12.7{\times}10^9\;cells\;l^{-1}$ and $12.3{\sim}1309\;pmol\;l^{-1}h^{-1}$, respectively) than those in the outer area. In both areas, bacterial abudance and production was highest in summer and lowest in winter. However, the variations of bacterial parameters was very large in each season. These large variations seemed to be related with the supply of organic matter. Bacterial abundance and production showed significant negative correlations with salinity in the inner area, suggesting that allochthonous organic matter input by river runoff could be an important factor in regulating the distribution of bacterial abundance and production. In addition, bacterial production also correlated positively with chl a in the inner area, suggesting that autochthonous substrate might be another regulating factor of bacterial growth in the area. These results suggest that the supply of both allochthonous organic substrates introduced by river runoff and autochthonous substrates produced by phytoplankon could be important in regulating bacterial growth and utilization of organic matter in the area. Thus, to manage water quality in the inner area of dike, it seems to be important to lower the load of both organic and inorganic nutrients from adjacent rivers.