• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.

• 한국안광학회지
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• 제6권1호
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• pp.87-91
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• 2001

PECVD 방법으로 60 Hz 상용전원을 사용하여 발생한 아세틸렌 플라스마로부터 다이아몬드성 탄소박막을 제작하고 Raman 분광에 의하여 D($sp^3$)와 G($sp^2$) 피크를 관측하여 박막의 다이아몬드성 정도를 확인하였고 $sp^3$와 $sp^2$의 비율과 FTIR 결과로부터 박막내의 수소함량의 측정을 통하여 아세틸렌 분압비와의 연관성을 확인하였다.

• 통합자연과학논문집
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• 제3권2호
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• pp.84-88
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• 2010

Photonic crystals containing rugate structures from a single crystalline silicon wafer was obtained by using a sinoidal alternating current during an electrochemical etch procedure. Photonic crystals were isolated from the silicon substrate by applying an electropolishing current and were then made into particles by using an ultrasonic fracture in an ethanol solution to give a smart dust. Smart dusts exhibited their unique nanostructures and optical characteristics. They exhibited sharp photonic band gaps in the optical reflectivity spectrum. The size of smart dust obtained was in the range of 10-20 nm.

• 대한화학회지
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• 제25권1호
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• pp.44-49
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• 1981

Acetoacetanilide를 브롬화한 결과 예상한 ${\alpha}$-bromo 유도체가 얻어지지 않고, r-bromo 유도체가 얻어졌다. 이것을 mercaptoethanol과 반응시켜 sulfide 유도체를 만든다음, 산성하에서 고리화시킨 결과 2-(N-phenylcarbamoyl)methylene-1,4-oxathiane이 좋은 수율로 얻어졌다. 이 물질은 살균제 농약으로 널리 사용되고 있는 carboxin과 그 구조가 매우 유사하므로 이 물질의 biological activity는 흥미있는 과제가 될 것이다.

• Journal of Welding and Joining
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• 제18권5호
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• pp.112-116
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• 2000

The development of new spraying processes has increased the demand for high quality protective coatings. Many thermal spraying processes have been developed to obtain coatings for a wide spectrum of materials and substrates. The plasma spray process was used to deposit coatings of WC-12%Co powders on mild steel substrate, and the characteristics of as-sprayed and vacuum heat treated coatings have been investigated. The variations of microhardness and bond strength in WC-12%Co coatings after heat treatment under vacuum circumstance have been investigated. The effects of phases and morphologies of WC-12%Co coatings have been investigated by utilizing X-ray diffraction and scanning electron microscopy, respectively. The microhardness and bond strength of the coatings were increased with increasing the temperature in the temperature range of $700^{circ}C~1000^{\circ}C$. The bond strength was obtained 49 MPa after vacuum heat treatment at $1000^{\circ}C$.

• 통합자연과학논문집
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• 제2권2호
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• pp.82-85
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• 2009

Distributed Bragg reflector (DBR) porous silicon (PSi) was generated by an electrochemical etching a bragg structure into a silicon wafer through electrode current in aqueous ethanolic HF solution. DBR PSi exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer using square current waveform. The multilayered photonic crystals of DBR PSi exhibited the reflection of a specific wavelength with high reflectivity in the optical reflectivity spectrum. In this work, we have developed a method to create refractive index in Si substrate through intensity of an electric current. The electrochemical process allows for precise control of the structural properties of DBR PSi such as thickness of the porous layer, porosity, and average pore diameter. The number of reflection peak of DBR PSi and its pore size increased as the intensity of electric current increased. This might be a demonstration for the fabrication of specific reflectors or filters.

• 한국세라믹학회지
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• 제35권6호
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• pp.619-625
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• 1998

Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin film phosphors were prepared on Si(100) wafers and ITO coated glass substrates by rf magnetron sputtering technique and the effects of the substrates dopant and the sputtering paramet-ers were analyzed, Changes of the oreintation were observed after annealine tratment. The grain size of {{{{ {Zn {Ga }_{2 }O }_{4 } }} : Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate which resulted in higher PL intensity. The PL spectra of Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin films showed sharp green luminescence spec-trum. According to CL spectrum it could be concluded that Mn ions acted as an actuator for green emission by substituting Zn atom sites.

• 한국공작기계학회논문집
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• 제11권6호
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• pp.111-117
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• 2002

The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.5-8
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• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.