• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.22-26
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• 2008

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present simulation, we adopt capacitively coupled plasma with asymmetrical electrodes. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 전기전자학회논문지
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• 제17권3호
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• pp.229-233
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• 2013

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

• 전자공학회논문지D
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• 제35D권2호
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• pp.60-69
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• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.215-222
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• 2007

Coating of Hot-dip galvannealed steel consists of various Fe-Zn intermetallic compounds. Since the coating is hard and there for is very brittle, the surface of steel sheet is easy to be ruptured during second manufacturing processing. This is called as powdering. In addition, forming equipment might be polluted with debris by powdering. Therefore, various research have been carried out to prohibit powdering fur improving the quality of GA steel. This paper carried out finite element analysis combined with damage model which simulate the failure of local layer of hot-dip galvannealed steel surface during v-bending test. Since the mechanical property of intermetallic compound was unknown exactly, we used the properties calculated from measurements. The specimen was divided into substrate, coating layer and interface layer. Local failure at coating layer or interface layer was simulated when elemental strain reached a prescribed strain.

• Smart Structures and Systems
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• 제23권3호
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• pp.215-225
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• 2019

In the present paper, the nonlocal strain gradient refined model is used to study the thermal stability of sandwich nanoplates integrated with piezoelectric layers for the first time. The influence of Kerr elastic foundation is also studied. The present model incorporates two small-scale coefficients to examine the size-dependent thermal stability response. Elastic properties of nanoplate made of functionally graded materials (FGMs) are supposed to vary through the thickness direction and are estimated employing a modified power-law rule in which the porosity with even type of distribution is approximated. The governing differential equations of embedded sandwich piezoelectric porous nanoplates under hygrothermal loading are derived through Hamilton's principle where the Galerkin method is applied to solve the stability problem of the nanoplates with simply-supported edges. It is indicated that the thermal stability characteristics of the porous nanoplates are obviously influenced by the porosity volume fraction and material variation, nonlocal parameter, strain gradient parameter, geometry of the nanoplate, external voltage, temperature and humidity variations, and elastic foundation parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• 대한전자공학회논문지SD
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• 제37권9호
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• pp.78-85
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• 2000

본 논문에서는 고속 VLSI 회로 내의 전송선에서 발생하는 전달지연시간을 계산하는 해석적 모델을 제시하고 그 모델의 정확성을 실험적으로 검증한다. 새로 제시한 모델은 표피효과, 근접효과 그리고 실리콘 기판에 의한 전성선 파라미터 변화를 고려하기 때문에 이들 영향을 반영한 새로운 인터커넥트 회로모델에 대하여 시간지연 모델을 구현한다. 모델의 정확성을 검증하기 위해 코플레너(coplanar)와 마이크로 스트립구조가 결합한 패턴의 모델을 0.35${\mu}m$ CMOS 공정을 사용하여 제작하였다. 이들 테스트 패턴에 대한 실험적 검증을 통하여 모델이 약 10% 이내의 오차범위에서 정확하다는 것을 보인다.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• 대한환경공학회지
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• 제29권7호
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• pp.839-845
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• 2007

용해성 glucose를 기질로 하여 혐기성 산발효조에서 동역학정수에 대한 온도의존성을 검토하였다. 온도범위는 $15^{\circ}C$에서 $30^{\circ}C$이며, 포화정수$(K_s\upsilon)$와 증식수율(Y)은 온도의 상승에 따라 감소하였지만, 최대비기질소비속도$(\upsilon_{max})$는 증가하였다. 기질소비속도와 균체 증식속도의 온도보정인자$(Q_{10})$ 값은 각각 1.3에서 2.2, 1.5에서 2.2의 범위를 보였다. 최대비기질소비속도$(\upsilon_{max})$가 증식수율(Y) 보다 온도의 변화에 대하여 더 민감하였다. $20^{\circ}C$에서 $30^{\circ}C$까지의 온도영역에서 체류시간과 기질농도의 관계에 대한 시물레이션 모델은 $1/SRT={(6.53){\cdot}(1.038)^{T-20}{\cdot}(S/X)}/{(1.38){\cdot}(0.983)^{T-20}+(S/X)}$이다.