• ETRI Journal
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• v.25 no.2
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.7-12
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• 2002

In the measurement of the RF properties, the LTCC substrate must be considered as a system including various conductor patterning processes. In this paper, the LTCC substrate system is compared with a conventional PCB(Printed Circuit Board) substrate such as FR-4, Duroid and Teflon, etc. The microstrip resonator method is employed for the measurement of the RF properties in the range of DC to 20 GHz. Experimental results show that the ring resonator method is suitable for system loss measurement, and the series gap resonator method for dielectric constant measurement. The process of conductor patterning and its effect on the system loss were also studied.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.80-84
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• 2012

A high reflectance mirror, which has very low absorption and scattering loss, was coated onto a crystalline substrate by ion beam sputtering and then annealed at $450^{\circ}C$. We carefully selected the mirror coating material, and designed the high reflectance mirror, in order to avoid UV degradation which comes from the He-Ne plasma. We measured the surface roughness of the Zerodur substrate using phase shift interferometry and atomic force microscopy, and compared it with the TIS scattering of the mirror. The cavity ring-down method was used to measure the absorption of the mirror, and the thin film structure was correlated to its results. We also compared the optical properties of coated mirrors before and after annealing.

• Journal of Fisheries and Marine Sciences Education
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• v.11 no.2
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• pp.139-149
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• 1999

Thermal sprayed Ni-Cr alloy coating on the carbon steel was carried out erosion-corrosion test and electrochemical corrosion test in the marine environment. The erosion-corrosion behavior and electrochemical corrosion characteristics of substrate(SS400) and thermal sprayed Ni-Cr coating was investigated. The erosion-corrosion control efficiency of Ni-Cr coating to substrate was also estimated quantitatively. The main results obtained are as follows : 1) The weight loss rate of Ni-Cr coating layer by the erosion-corrosion compared with substrate was smaller. With the lapse of time, the weight loss rate of substrate was linearly increased in $25{\Omega}{\cdot}cm$ solution, but that of Ni-Cr coating became stable. 2) The corrosion potential of substrate became less noble than that of Ni-Cr coating layer, and the corrosion current density of Ni-Cr coating became lower than that of substrate. 3) The control efficiency of erosion-corrosion of Ni-Cr coating compared to substrate became more dull than that of corrosion in $25{\Omega}{\cdot}cm$ and $5000{\Omega}{\cdot}cm$ solution.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.408-411
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• 2008

As to this research is new structure of the semiconductor substrate heating apparatus. The fast thermoresponsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. For this, it adheres closely to the substrate, in which the photosensitive film is coated and the heating plate layer, adhering closely to the floor side of a substrate the mica layer which adheres closely to the floor side of the upper heating plate layer in order to minimize an insulation and heat loss, and the lower part of the mica layer and it is comprised of the floor plate layer. The heating plate layer forms the continued groove portion over the floor side whole. The sheath heater for heating a substrate is inserted with the groove portion and the heating plate layer is comprised. It is confirmed that by using the new substrate heating structure, the temperature change of the heating plate against the time is observed. Then, there is the electric power saving effect of about 40% in comparison with the existing method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.532-537
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• 2005

In order to develop a tunable resonator which can be easily operated by DC bias and applied for microwave tunable filters and devices using ferroelectric thin or thick films, the non conductor backed-and conductor backed- coplanar stripline resonators have been designed and analyzed. They have been designed to be operated at 25 GHz which involve coplanar stripline input and output ports. The resonators have been simulated and analyzed using Ansoft HFSS. The research has been focused on the Quality factor of the coplanar stripline resonator. The conductor Q, box Q, and radiation Q of the resonators have been analyzed and calculated according to the substrate thickness & conductor width of the resonators. From these parameters, the loss factors of the coplanar stripline resonator have been investigated. The conducting Q of the coplanar stripline resonator has no relation with the thickness of dielectric substrate and increases as the conductor width increases. The box Q has no much relation with the thickness of substrate and the conductor width, which is above 2000. The radiation loss increases as the thickness of substrate and the conductor width increase. To decrease the radiation loss of the coplanar stripline resonator, a conductor backed coplanar stripline resonator has been proposed which has the unloaded Q of 170.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.1-5
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• 2010

A spurious suppressed bandpass filter is proposed and discussed using the stepped impedance resonator(SIR) on a substrate-integrated waveguide(SIW) structure with a double-layer substrate. The second resonance of the fundamental $TE_{10}$ mode can be controlled by adjusting the electrical length and impedance ratio of each SIR. The spurious suppressed SIW bandpass filter shows the measurement results of the insertion loss of 3.98 dB and return loss of less than 11.58 dB at the center frequency of 12 GHz. Also, the second spurious frequency is improved to about $1.5f_0$ compared with $1.33f_0$.

• Journal of information and communication convergence engineering
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• v.4 no.2
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• pp.88-91
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.255-258
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the $S_{11}-parameter$ of the inductor.