• Title/Summary/Keyword: substrate integrated waveguide

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Design and Analysis of 45°-Inclined Linearly Polarized Substrate Integrated Waveguide(SIW) Slot Sub-Array Antenna for 35 GHz (45도 선형 편파 발생용 SIW 슬롯 Sub-Array 안테나 설계 및 해석)

  • Kim, Dong-Yeon;Nam, Sangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.4
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    • pp.357-365
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    • 2013
  • The 4 by 4 series slot sub-array antenna is proposed using substrate integrated waveguide(SIW) technology for 35 GHz of Ka band application. The proposed antenna is realized with multi-layered structure for compact size and easy integration features. 4 by 4 radiating slots are arrayed on top PCB with equal spacing and the feeding SIWs are arranged on middle and bottom PCBs for uniform power distribution. The multi-layered antenna is realized using RT/Duroid 5880 that has dielectric constant of 2.2 and the total antenna size is $750.76mm^2$. The individual parts such as radiators and feeding networks are simulated using full-wave simulator CST MWS. Furthermore, the total sub-array antenna also fabricated and measured the electrical performances such as impedance bandwidth under the criteria of -10 dB(490 MHz), maximum gain(18.02 dBi), sidelobe level(SLL)(-11.0 dB), and cross polarization discrimination (XPD)(-20.16 dB).

Design of Low-loss Microstrip-to-Waveguide Inline Transition Structure (저손실 마이크로스트립-도파관 inline 전이구조 설계 )

  • Young-Gon Kim;Han-Chun Ryu;Se-Hoon Kwon;Seon-Keol Woo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.4
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    • pp.29-34
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    • 2023
  • A clear and efficient design method for a microstrip-to-waveguide inline transition, which is based on an analytical model, is presented. The transition consists of three parts: a microstrip-to-SIW transition, a dielectric-loaded waveguide with substrate-height, and a stepped-height waveguide. The shape of the transitional structure is formed for impedance matching. Two equivalent type0s of dielectric-loaded transitional structures are proposed. The design method is applicable to any size of the waveguide, but a design method of two Ka-band transitions is demonstrated. The proposed transitions, in a back-to-back configuration, have less than 1.2 dB insertion loss and more than 15 dB return loss from 29.8 GHz to 38.2 GHz.

Design of DNG-type Substrate-Integrated-Waveguide Resonators to Replace the Conventional Metallic Waveguide for the Military Satellite Transceiver (군위성 송수신기용 기존 금속 도파관을 대체하는 DNG형 기판적층 도파관 공진기의 설계)

  • Kahng, Kyung-Seok;Yang, In-Kyu;Kahng, Sungtek;Lee, Ho-Sub;Lee, Hyoung-Jong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.11
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    • pp.1584-1589
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    • 2013
  • A new and significantly small guided and resonant structure is suggested to take over bulky metallic hollow waveguides used in military satellite transceivers. Below Ku-band, the conventional waveguides resulting in quite heavy transceivers will be replaced by the low profile SIW(substrate integrated waveguide) structures that are distinguished from the others in that the suggested ones have much lower cut-off frequencies by the circuital configuration of DNG(dobule negative) constitutive parameters and become even smaller than the other SIWs. The design scheme is validated by the circuit and full-wave simulations from the guided, resonant, and coupled structures. Besides, a bandpass filter as the suggested coupled structure is fabricated with a cheap substrate in a low-budget fabrication process and its frequency response is measured as verification of the purpose of the design.

Low-Phase Noise Oscillator Using Substrate Integrated Waveguide and Complementary Split Ring Resonator (기판 집적형 도파관(SIW)과 Complementary Split Ring Resonator(CSRR)로 구현한 저위상 잡음 발진기 설계)

  • Park, Woo-Young;Lim, Sung-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.4
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    • pp.468-474
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    • 2012
  • A low phase-noise microwave oscillator is presented by a substrate integrated waveguide(SIW) loading a complementary split ring resonator(CSRR) in this paper. The unloaded $Q$-factor of the SIW cavity is increased by loading a complementary split ring resonator(CSRR) and its value exhibits 1960. It is theoretically and experimentally demonstrated that the proposed circuit generates 11.3 dBm of output power at 9.3 GHz and a phase-noise of -127.9 dBc/Hz at 1-MHz offset.

HMSIW Balanced Filter for Improved Isolation between Output Ports (출력 단자 간의 격리 특성이 향상된 HMSIW 평형 여파기)

  • Hwang, Seok-Min;Byun, Jin-Do;Lee, Hai-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.173-181
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    • 2011
  • In this paper, we propose a half mode substrate integrated waveguide(HMSIW) balanced bandpass filter to yield improved isolation between output ports. In order to achieve good isolation, resistive coupling slot is employed in HMSIW filter. The measurement results show that the insertion losses($S_{21}$, $S_{31}$) are $5.4{\pm}0.2$ dB and input return loss($S_{11}$) is more than 10 dB from 5.8 GHz to 6.4 GHz. Moreover isolation between output ports is larger than 18 dB and phase difference of output ports is $180{\pm}10^{\circ}$.

Bandpass Filter Using Folded Substrate Integrated Waveguide Structure (접힌 기판 집적형 도파관 구조를 이용한 대역통과 필터)

  • Yun, Tae-Soon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.5
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    • pp.965-970
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    • 2018
  • In this paper, the transition of the folded substrate integrated waveguide (FSIW) using two substrates is suggested and applied to the bandpass filter. The FSIW has similar characteristics with the SIW and can be reduced the width of the SIW. The transition between the FSIW to the microstrip is designed by using shorted quarter wavelength line. Also, the bandpass filter is designed by using the FSIW and the elliptic lowpass filter of 5 section. Fabricated bandpass filter has the center frequency of 5.75 GHz and the bandwidth of 33.2%. Also, the insertion loss and return loss at the center frequency are 0.63dB and 19.1dB, respectively.

Design of Frequency-Tunable Microstrip Filter Using Triple-Mode Substrate Integrated Waveguide (SIW) Structure (3중모드 기판집적 도파관(SIW) 구조를 이용한 주파수 가변 마이크로스트립 필터 설계)

  • Kyeong-Min Na;Dong-Woo Kim;Soon-soo Oh
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.72-77
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    • 2024
  • In this paper, a triple-mode frequency-tunable filter is proposed to meet the recent demands of various frequency bands of mobile communication services. This filter has a tunable structure that can adjust the resonance frequency using a variable capacitor. To improve the quality factor, a SIW(Substrate Integrated Waveguide) structure was introduced and a structure that induces three resonance modes was implemented through a circular hole located in the center. The change in electric field distribution and resonance frequency by the variable capacitor was simulated using HFSS, and the change in electric field distribution and resonance frequency of Triple Mode mode was confirmed.

Dual-Band Frequency Reconfigurable Small Eighth-Mode Substrate-Integrated Waveguide Antenna (이중 대역 주파수 가변 1/8차 소형 기판집적형 도파관 안테나)

  • Kang, Hyunseong;Lim, Sungjoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.1
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    • pp.10-18
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    • 2014
  • In this paper, we propose a new frequency reconfigurable dual-band antenna. By using an electronically compact eighth-mode substrate-integrated-waveguide(EMSIW) resonator, we have designed a compact antenna, which performs dual-band movement by additionally loading a complementary split ring resonator(CSRR) structure. The EMSIW and CSRR structures are designed to satisfy the bandwidths of 1.575 GHz(GPS) and 2.4 GHz(WLAN), respectively. We load the CSRR with a varactor diode to allow a narrow bandwidth and to enable the resonance frequency to continuously vary from 2.4 GHz to 2.5 GHz. Thus, we realize a channel selection function that is used in the WLAN standards. Irrespective of how a varactor diode moves, the EMSIW independently resonates so that the antenna maintains a fixed frequency of the GPS bandwidth even at different voltages. Consequently, as the DC bias voltage changes from 11.4 V to 30 V, the resonance frequency of the WLAN bandwidth continuously changes between 2.38 GHz and 2.5 GHz, when the DC bias voltage changes from 11.4 V to 30 V. We observe that the simulated and the measured S-parameter values and radiation patterns are in good agreement with each other.

A Short Wavelength Coplanar Waveguide Employing Periodic 3D Coupling Structures on Silicon Substrate

  • Yun, Young
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.2
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    • pp.118-120
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    • 2016
  • A coplanar waveguide employing periodic 3D coupling structures (CWP3DCS) was developed for application in miniaturized on-chip passive components on silicon radio frequency integrated circuits (RFIC). The CWP3DCS showed the shortest wavelength of all silicon-based transmission line structures that have been reported to date. Using CWP3DCS, a highly miniaturized impedance transformer was fabricated on silicon substrate, and the resulting device showed good RF performance in a broad band from 4.6 GHz to 28.6 GHz. The device as was 0.04 mm2 in size, which is only 0.74% of the size of the conventional transformer on silicon substrate.

Fully Integrated Electromagnetic Noise Suppressors Incorporated with a Magnetic Thin Film on an Oxidized Si Substrate

  • Sohn, Jae-Cheon;Han, S.H.;Yamaguchi, Masahiro;Lim, S.H.
    • Journal of Magnetics
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    • v.12 no.1
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    • pp.21-26
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    • 2007
  • Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.