• Journal of Surface Science and Engineering
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• v.24 no.1
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• pp.16-16
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• 1991

Generally brittle eta phase produced during TiC deposition has a effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η), phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase)have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as follows; 1. by inserting underlayer eta phase were decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest grain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2006.04a
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• pp.49-53
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• 2006

The possibility of removal of PCBs (Polychlorinated Biphenyls) in soil was studied using biological method. The effects of soil and co-substrate on both PCBs reduction rate and chloride ion concentration in soil were investigated. It was shown that PCBs concentration of all the soils used in this study were reduced from 5ppm to below 1ppm after 60days, also chloride ion concentration in slurry increased, Results showed that leaf mold and humic acid as co-substrate do not seem to be effective for biological treatment of PCBs in soil,

• Journal of Surface Science and Engineering
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• v.44 no.1
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• pp.26-31
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• 2011

Numerical modeling is used to investigate the perturbation of a single Langmuir probe (0.2 mm diameter shielded with 6 mm insulator) inserted along the center axis of a cylindrical inductively coupled plasma chamber filled with Ar at 10 mTorr and driven by 13 MHz. The probe was driven by a sine wave. When the probe tip is close to a substrate by 24.5 mm, the probe characteristics was unperturbed. At 10 mm above the substrate, the time averaged electric potential distribution around the tip was severly distorted making a normal probe analysis impossible.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• Journal of Surface Science and Engineering
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• v.25 no.1
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• pp.16-23
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• 1992

Generally brittle eta phase produced during TiC deposition has a bad effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η) phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase) have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as fellows; 1. by inserting underlayer eta phase was decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest gain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Biotechnology and Bioprocess Engineering:BBE
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• v.7 no.1
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• pp.21-25
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• 2002

To maximize and sustain the productivity of Monascus pigments, various environmental and nutritional parameters, such as the initial moisture content, pH, inoculum size, sample size, and nutrient supplement, that influence pigment production were evaluated in solid-state cultures as follows: initial moisture content, $50\%;$ pH, 6.0; inoculum size $1\;\times\;10^4$ spore cells $(grams\;of\;dry\;solid\;substrate)^{-1};$ sample size, 300 g. All supplementary nutrients (carbon, nitrogen, and mineral sources) added has inhibitory effects on the cell growth and red pigment production. In open tray culture the maximum biomass yield and specific productivity of red pigments were 223 mg DCW $(grams\;of\;initial\;dry\;substrate)^{-1}$ and, $47.6\;OD_{500}\;(DCW\;grams)^{-1}h^h{-1}$ respectively.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2018.05a
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• pp.335-336
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• 2018

This study discusses the development of asphalt based waterproofing sheet applied on the blind side of the concrete substrate. The inorganic coating membrane is applied on top of the waterproofing sheet surface for protection, and adhesive bond to the concrete substrate surface is secured via hydration reaction the cement. The study reveals the experimental results of the overlap section tensile strength to observe the effects of the adhesion strength of this material.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.1-6
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• 2002

A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $130^{\circ}C$ and $250^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5 \times10^{-6}$ Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0 $\mu \Omega \cdot \textrm{cm}$ was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.129-135
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• 1996

In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.