• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.11a
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• pp.13-14
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.315.1-315.1
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1573-1575
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• 2004

An alumina membrane with nano-sized pores was fabricated by anodic oxidation. The shape and structure of the pore on alumina membrane were changed according to the roughness of aluminum surface. The shape and structure of the nano-sized pre were investigated according to purity of aluminum substrate for the anodization process. The aluminum substrates with 99.5% and 99.999% purities were used. The aluminum substrate(99.5%) was anodized after the processes of pressing, mechanical polishing, chemical polishing, and electrochemical polishing. The nano-sized pores with the pore size of 50 - 100nm, the cell size of 20-50nm and the thickness of $10{\mu}m{\sim}45{\mu}m$ were obtained. Even though the electrochemical polishing was used for the aluminum substrate (99.999%), the same characteristics as the aluminum substrate (99.5%) was obtained. The alumina membrane prepared by anodization for 5 min using fixed voltage method shows the pore with irregular shape. The pore shape was changed to regular shape after pore widening process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• BMB Reports
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• v.31 no.4
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• pp.399-404
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• 1998

In order to gain further insight on the relationship between structure and function of glutathione S-transferase (GST), the six active-site mutants, R13T, K44T, Q51A, Q64A, S65A, and D98A, of human GST P1-1 were expressed in Escherichia coli and purified to electrophoretic homogeneity by affinity chromatography on immobilized GSH. The active-site mutants showed marked differences in substrate specificity. The substitution of Gln51 with threonine resulted in a drastic decrease in the specific activities to <10% of the wild-type value. The substitution of Arg13 with threonine resulted in more decreased specific activity toward cumene hydroperoxide and in the $I_{50}$ values of S-(2,4-dinitrophenyl) glutathione and benanstatin A. These results suggest that the substitution of Arg13 with threonine changes the conformation of the active site to increase the affinity for the product or electrophilic substrate. Lys44 seems to be in the vicinity of the H-site of hGST P1-1 or may contribute to some extents to the electrophile binding.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.5
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• pp.187-196
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• 2003

Effects of Airgap and anisotropy substrate on input impedance and radiation pattern of rectangular microstrip patch antenna are studied in terms of an integral equation formulation. The input impedance and radiation pattern of microstrip patch antenna is investigated by using Galerkin's moment method in solving the integral equation. Sinusoidal functions are selected as basis functions, which resemble in the actual standing wave on the Patch. From the numerical results, the variation of input impedance and radiation patterns in the variation of air gap thickness, anisotropy ratio of substrate, and relative permittivity of anisotropy substrate are presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.985-993
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• 2006

An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.