• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.781-790
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• 2001

The effects of silicon substrate thickness on the performance of thin film PZT IR detectors are theoretically and experimentally investigated. Theoretical analyses show that the pyroelectric current responsivity of a detector without a silicon substrate is about two orders higher than that of a detector with a 450${\mu}{\textrm}{m}$ thick silicon substrate. At a fixed chopping frequency of 100Hz, the pyroelectric current responsivity decreases exponentially with increasing silicon substrate thickness up to 50${\mu}{\textrm}{m}$, and above 50${\mu}{\textrm}{m}$ the decreasing rate become slow. The thinner the silicon substrate is, the less the thermal loss by conduction is , and thus the higher responsivity is resulted. To verify the theoretical analyses, micromachined PZT thin film IR detectors with different silicon substrate thicknesses are fabricated and characterized. The theoretical and experimental results show the similar tendencies for all silicon substrates with varying thickness.

• Progress in Superconductivity
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• v.5 no.1
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• pp.70-74
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• 2003

We fabricated cube textured Ni substrate for YBCO coated conductor and evaluated the effects of processing parameters on microstructural evolution and texture formation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(PM) and plasma arc melting(PAM). Subsequently, the rods were cold rolled to 100 $\mu\textrm{m}$ thick substrate and annealed at temperatures of $700∼1200^{\circ}C$. The texture of the substrate was characterized by pole-figure. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 600∼$l100^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$∼$10^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the corresponding values were $9^{\circ}$ ∼$13^{\circ}$ at the temperature range. In addition, recrystallization twin texture, (221)＜221＞, was formed as the temperature increased further. OM profiles showed that the grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.61-67
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• 2020

In this paper, we calculated the warpage of bare substrates and chip attached substrates by using FEM (Finite Element Method), and compared and analyzed the effect of the chips' attachment on warpage. Also, the effects of layer thickness of substrates for reducing warpage were analyzed and the conditions of layer thickness were analyzed by signal-to-noise ratio of Taguchi method. According to the analysis results, the direction of warpage pattern in substrates can change when chips are attached. Also, the warpage decreases as the difference in the CTE (coefficient of thermal expansion) between the top and bottom of the package decreases and the stiffness of the package increases after chips are loaded. In addition, according to the impact analysis of design parameters on substrates where chips are not attached, in order to reduce warpage, the inner layers of the circuit layer Cu1 and Cu4 has be controlled first, and then concentrated on the thickness of the solder resist on the bottom side and the thickness of the prepreg layer between Cu1 and Cu2.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.107-112
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• 2017

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

• Journal of Surface Science and Engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.31 no.1
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• pp.38-42
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• 2021

In this study, high temperature wetting analysis and AZ80/Ti interfacial structure observation are performed for the mixture of AZ80 and Ti, and the effect of Al on wetting in Mg alloy is examined. Both molten AZ80 and pure Mg have excellent wettability because the wet angle between molten droplets and the Ti substrate is about 10° from initial contact. Wetting angle decreases with time, and wetting phenomenon continues between droplets and substrate; the change in wetting angle does not show a significant difference when comparing AZ80-Ti and Mg-Ti. As a result of XRD of the lower surface of the AZ80-Ti sample, in addition to the Ti peak of the substrate, the peak of TiAl3, which is a Ti-Al intermetallic compound, is confirmed, and TiAl3 is generated in the Al enrichment region of the Ti substrate surface. EDS analysis is performed on the droplet tip portion of the sample section in which pure Mg droplets are dropped on the Ti substrate. Concentration of oxygen by the natural oxide film is not confirmed on the Ti surface, but oxygen is distributed at the tip of the droplet on the Mg side. Molten AZ80 and Ti-based compound phases are produced by thickening of Al in the vicinity of Ti after wetting is completed, and Al in the Mg alloy does not affect the wetting. The driving force of wetting progression is a thermite reaction that occurs between Mg and TiO2, and then Al in AZ80 thickens on the Ti substrate interface to form an intermetallic compound.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.55-62
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• 2024

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω^-1).

• Biomedical Science Letters
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• v.8 no.1
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• pp.13-20
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• 2002

Asadisulphide were purified from Ferrula assafoetida by organic solvent extraction and chromatography. Since ethyl acetate extracts of F. assafoetida has the strongest inhibitory effects on adherence of HL-60 cells, it was reextracted with ethyl acetate, hexane, and ethyl ether and chromatographed three times to isolate asadisulphide. HL-60 cells were grouped into untreated control, TPA-treated, asadisulphide-teated and TPA＋asadisulphide-treated groups, and structural changes of these cells were observed using light microscope, scanning electron microscope and transmission electron microscope to examine the inhibitory effects of asadisulfide on the TPA-induced adherence of HL-60 cells. Light microscopic observations showed that asadisulphide has inhibitory effects on the cell aggregation, extention of cytoplasmic processes and inhibition of substrate adhesion of HL-60 cells. Using scanning and transmission electron microscope, it was observed that cell surfaces and several ultrastructures of TPA-treated HL-60 cell were different from control group, while there were no remarkable differences between asadisulphide-treated and TPA＋asadisulphide-treated group. These results could suggest that asadisulphide has the inhibitory effects on the TPA-induced structural changes of HL-60 cells.

• Korean Journal of Exercise Nutrition
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• v.15 no.4
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• pp.183-189
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• 2011

Caffeine and capsaicin increase resting energy metabolism. However, most measurements have been conducted in short-term studies. Therefore, we investigated the effects of caffeine and capsaicin on energy expenditure and energy substrate utilization in resting rats for 6 h. The caffeine (Experiment 1) experiment included four male rats aged 5 weeks and measured the effects of oral administration of caffeine (10 or 50 mg/kg) on respiratory gas, energy expenditure, and energy substrate oxidation for 6 h. Experiment 2 included four male rats aged 6 weeks to measure the effects of capsaicin (10 mg/kg) using the same method as in Experiment 1. The results of Experiment 1 indicated that O₂ uptake and carbohydrate oxidation after caffeine administration for 2 h was higher in the 10 mg trial than that in the 50 mg or placebo trials (P < 0.05). However fat oxidation was not significantly different. In contrast, capsaicin (Experiment 2) observed no differences between the placebo and the capsaicin trials. In conclusion, caffeine initially increased the resting energy consumption for 2 h, and this energy expenditure was due to carbohydrate oxidation. Capsaicin did not change oxygen uptake, respiratory exchange ratio, fat oxidation, or carbohydrate oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.372-373
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• 2009

In this work, the effects of substrate on the formation of YBaCuO by CVD were investigated by observing the microstructure and the crystallographic orientation and by measuring the temperature dependence of electrical resistance. Source materials used to synthesize the YBaCuO superconducting film were beta-diketone chelates of Y, Ba and Cu. These chelates were evaporated at $137-264^{\circ}C$. The source vapors of Y, Ba and Cu were transported into hot zone by using Ar gas and $O_2$ gas was introduced separately.