• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.24-28
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• 1998

Pd/Ge ohmic contact system on n-type InGaAs was studied. A good ohmic begavior by rapid thermal annealing was shown up to $400^{\circ}C$, and the specific contact resistance was reduced to low-$10^-6\Omega\textrm{cm}^2$EX>. However, above $425^{\circ}C$ it was deteriorated by intermixing and phase reaction of ohmic metals and InGaAs substrate. No remarkable phase change was observed below $350^{\circ}C$, but the reaction was initiated at ~$375^{\circ}C$ and considerable phase change was found above $425^{\circ}C$. Non-spiking and planar interfaces were observed even when annealed at $425^{\circ}C$, and smooth and shiny surface was kept up to $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.420-420
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• 2012

ZnO seed layer were deposited on quartz substrate by sol-gel method and prism-like Al-doped ZnO nanorods (AZO nanorods) were grown on ZnO seed layer by hydrothermal method with various Al concentration ranging from 0 to 2.0 at.%. Structural and optical properties of the AZO nanorods were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), photoluminescence (PL). The diameter of the AZO nanorods was smaller than undoped ZnO nanorods and its diameter of the AZO nanorods decreased with increasing Al concentration. In XRD spectrum, it was observed that stress and full width at half maximum (FWHM) of the AZO nanorods decreased and the 'c' lattice constant increased as the Al concentration increased. From undoped ZnO nanorods, it was observed that the green-red emission peak of deep-level emission (DLE) in PL spectra. However, after Al doping, not only a broad green emission peak but also a blue emission peak of DLE were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.251-251
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• 2012

A lot of studies are undergoing on the magneto-optical (MO) properties of patterned magnetic systems for the reason that they have potential application to information technology such as ultrahigh-speed computing. Moreover, they can be considered as the future candidates for high-density MO storage devices. Not only the technical aspects, but there have been also tremendous interests in studying their properties related to the fundamental physics. The MO Kerr-rotation effects (both in reflected and the diffracted modes) and the magnetic force microscopy (MFM) are very useful techniques to investigate the micromagnetic properties of such periodic structures. Hence, in this study, we report on the MO properties of bilayered Cobalt (Co)/ nickel (Ni) micro-patterned anti-dot arrays. Such a ferromagnetic structure was made by sequentially depositing co (40 nm)/Ni (5 nm) bilayer on a Si substrate. The anti-dot patterning with hole diameter of $1{\mu}m$ was done only on the upper Co layer using photolithography technique, while the Ni underlayer was kept uniform. The longitudinal Kerr rotation (LKR) of the zeroth- and the first-order diffracted beams were measured at an incidence of $30^{\circ}$ by using a photoelastic modulator method. The external magnetic field was applied perpendicularly to the reflected and the diffracted beams using an electromagnet capable of a maximum field of ${\pm}5$ kOe. Significantly, it was observed that the LKR of the first-order diffracted beam is nearly 4 times larger than that of the zeroth-order beam. The simulated results for the hysteresis loops matched qualitatively well with the experimentally obtained ones. In conjunction with the LKR, we also investigated the magnetic-domain structure by using a MFM system, which were analyzed to elucidate the origin of the enhanced MO rotation.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.54-61
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• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.218-224
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• 2006

RF sputtering process was applied to produce thin hydroxyapatite(HAp) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the hardness between HAp thin films and Ti-6Al-4V alloy substrates were studied. Before deposition, the Ti-6Al-4V alloy substrates were heat treated for 1h at $850^{\circ}C\;under\;3.0{\times}10^{-3}torr$, and after deposition, the HAp thin films were heat treated for 1h at $400^{\circ}C,\;600^{\circ}C\;and\;800^{\circ}C$ under the atmosphere, and analyzed FESEM-EDX, FTIR, XRD, nano-indentor, micro-vickers hardness, respectively. Experimental results represented that the surface defects of thin films decreased by relaxation of internal stress and control of substrate structure followed by heat treatment of substrates before the deposition, and the HAp thin films on the heat-treated substrates had higher hardness than none heattreated substrates before the deposition, and the hardness properties of HAp thin films and Ti-6Al-4V alloy substrates appeared independent behavior, and the hardness of HAp thin films decreased by formation of $VTiO_3(OH),\;{\theta}-Al_{0.32}V_2O_5,\;Al_{0.33}V_2O_5$.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.63-70
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• 1996

Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, $SiH_{2}Cl_{2}\;/\;H_{2}$ gas mixtures and various process parameters including $H_{2}$ prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of $900^{\circ}C$. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about $200{\AA}/decade$ in the structure of undoped Si / $n^{+}-Si$ substrate.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.658-664
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• 2006

$\rho$, $\alpha$-dimethyl benzyl alcohol was resolved by the biphasic dynamic kinetic resolution (DKR). Acidic zeolite was used as a racemization catalyst while immobilized enzyme was employed for kinetic resolution. The effects of the process variables including nature of acyl donor, reaction temperature, substrate concentration, ratio of the two catalysts and stirring rate on the conversion and enantiomeric purity of the product were investigated. In DKR of $\rho$, $\alpha$-dimethyl benzyl alcohol, the product of 99% ee was obtained with a maximum yield of 88%. The high performance of the catalyst system was maintained in the condition of higher TON and under repeated use.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.580-585
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• 2006

UV-thermal dually curable coating materials were prepared by the sol-gel method. Nano-sized colloidal boehmite was treated with various organo silane coupling agents. These materials could be well dispersed in various alcohols and relatively polar organic solvents such as tetrahydrofuran and acetonitrile. The coating films were prepared by a spin coating method on various substrates, which were characterized by FT-IR, Si/Al CP MAS NMR spectra, UV-Vis spectrophotometer, FE-SEM, Taber abraser, haze meter, and pencil hardness tester. The effects of molar ratio and types of silane coupling agents, curing method and ion-shower treatment were investigated. Dually curable coating method offered an optimally good quality film in both hardness and transmittance. The transparency and the hardness of the prepared films were increased with amounts of 3-(trimethoxysilyl)propylmethacrylate, and (3-glycidyloxypropyl)trimethoxysilane, respectively. The adhesion between coated layer and substrate could be enhanced by ion-shower treatment.

• Journal of the Korea institute for structural maintenance and inspection
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• v.19 no.3
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• pp.149-160
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• 2015

This study reports the interfacial bond strength between Ultra High Performance Concrete (UHPC) and Normal Strength Concrete (NSC). While previous studies have focused on the interfacial strength between NSC substrate and UHPC overlay, this study use precast UHPC for enhanced constructability and replacement of formwork. The factors affecting the interface strength are comprehensively reviewed. It can be classified into: interface shape, degree of hardening and moisture condition of UHPC before combining with NSC, and curing condition of composite materials. Conducted experiments verify the effects of each factor on the interface strength and, accordingly show different failure modes. In particular, a new failure mode of the failure of a part of UHPC was firstly found in the case of sample with rough interface between UHPC and NSC. The other factors of the degree of hardening and the moisture and curing conditions of UHPC were discussed. This research will provide a valuable foundation to utilize the UHPC as a composite material.