• Korean Journal of Food Science and Technology
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• v.25 no.1
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• pp.9-14
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• 1993

The free, ester and insoluble bound phenolic acids in the extracts from defatted perilla seed flour were isolated and their antioxidative activities were evaluated in comparison with commercial synthetic antioxidants. Total phenolic content of the perilla seed was 0.75% as chlorogenic acid. Each percent ratio of the content of free, ester, and insoluble bound phenolic acid to total phenolic content was 87.5, 7.5 and 5.0% respectively. Chlorogenic acid was identified as a major phenolic acid and a small amount of caffeic acid was also identified in the free phenolic acid extract, but they were not found in soluble ester and insoluble bound phenolic extracts by two dimensional paper chromatography. Each type phenolic extract from 30g of deffated perilla flour showed antioxidant activity similar to that of BHT (0.02%, w/w) in 200g of soybean oil substrate inspite of the difference of each phenolic content.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.83-90
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• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Journal of Plant Biology
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• v.34 no.1
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• pp.53-57
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• 1991

The effect of polyamines and methylglyoxal bis(guanylhydrazone)(MGBG) on the activity of diamine oxidase was studied in soybean (Glycine max) seedlings. $10^{-2}\;M$ of putrescine, spennidine, and spermine inhibited diamine oxidase activity, whereas $10^{-6}\;M$ putrescine increased enzyme activity. These results suggest that diamine oxidase can be induced by a specific substrate, putrescine. The content of putrescine was increased in response to the increase in concentratioin of MGBG. In vitro, 40% of the diamine oxidase activity was inhibited by $10^{-3}\;M$ MGBG. In vivo, the diamine oxidase activity was increased by a low concentrration of MGBG. It was suggested that MGBG inhibited the formation of spermidine and that the accumulated putrescine induced diamine oxidase, whereas the diamine oxidase acitivity was inhibited by a high concentration of MGBG. It is suggested that a high cocentration of MGBG increases the putrescine content by inhibiting diamine oxidase activity which is responsible for putrescine degradation.dation.

• Korean Journal of Environmental Biology
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• v.34 no.4
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• pp.272-280
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• 2016

Changes in land use and increase in urban energy consumption influence urban life. This study analyzed the characteristics and patterns of urban heat and presents management schemes to generate a comfortable and sustainable urban environment. The study aimed to demonstrate the positive effects of artificial ground greening on improving the microclimate through evapotranspiration using perennial herbs. We have designed a chamber that could control constant temperature and humidity, measure temperature reductions in each plant and changes in sensible heat and latent heat. This study identified Sedum kamtschaticum as the most effective plant in controlling temperature. At $22^{\circ}C$, $3.2^{\circ}C$ temperature reduction was observed, whereas four other plants showed a $1.5^{\circ}C$ reduction. At $25^{\circ}C$, $2.0^{\circ}C$ temperature reduction was observed. On the other hand, the use of Sedum sarmentosum resulted in the lowest effect. Zoysia japonica is the most commonly used ground covering plant, although the temperature reduction of Lysimachia nummularia was more effective at high temperature conditions. Sensible heat and latent heat were calculated to evaluate the thermal performance of energy. At a temperature >$30^{\circ}C$, L. nummularia and S. sarmentosum emitted high latent heat. In this study, we analyzed the thermal performance of green roof perennial plants; in particular, we analyzed the evapotranspiration and temperature reduction of each plant. Since the substrate depth and types, plant species, and seasonal change may influence temperature reduction and latent heat of green roofs, further studies are necessary.

• Progress in Superconductivity
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• v.7 no.1
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• pp.87-91
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• 2005

[ $YBa_{2}Cu_{3}O_{7-x}$ ] thin films were fabricated on $LaAlO_3$(100) substrate by TFA-MOD process. Yttrium-excess (0, 2.5, 5, 10, 15, 20 $at\%$) coating solution was prepared by adding extra amount of yttrium into a stoichiometric(Y:Ba:Cu=1:2:3) TFA precursor solution. Results are presented concerning the influence of excess yttrium additions on the microstructure development and superconducting properties of $YBa_{2}Cu_{3}O_{7-x}$ film. Large sized CuO particles was observed by SEM EDS investigation. The addition of excess yttrium affected little on $T_c$ of $YBa_{2}Cu_{3}O_{7-x}$ film. $J_c$ of YBCO film was enhanced with excess yttrium addition. Jc maximum of $2.21\;MA/cm^2$ (77 K, self field) appeared with the $15\;at\%$ addition of excess yttrium. With further yttrium addition up to $20\;at\%$, Jc decreased down to $0.9\;MA/cm^2$.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.328-333
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• 1998

Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.9-13
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• 2006

The copper lines in COF are usually fabricated by subtractive method. As the width of lines are smaller, the subtractive method has a lateral etching problems. In semi-additive method, copper lines are fabricated by lithographic technique followed by electroplating method. Fine line patterns of $10-40{\mu}m$ were used for this study. Two different types of thick photoresist, AZ4620 and PMER900, were employed for PR mold. Copper lines were fabricated by electroplating method. The crack were found in fine copper lines due to high residual stress when normal copper electroplating bath were used. The via filling copper electroplating bath were replaced the normal electroplating bath and then cracks were not found in the fine copper lines. During substrate etching, the lateral etching of copper lines were not occurred.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.411-417
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• 2008

Aerosol Deposition Method (ADM) is a novel technique to grow ceramic thick films with high density and nano-crystal structure at room temperature. $^{1,2)}$ For these unique advantages of ADM, it would be applied to the fabrication process of 3-D integration ceramic modules effectively. However, it is critical to control the properties of starting powders, because a film formation through ADM is achieved by impaction and consolidation of starting powders on the substrates. We fabricated alumina thick films by ADM for the application to integral substrates for RF modules. When the as-received alumina powders were used as a starting material without any treatments, it was observed that the dielectric properties of as-deposited alumina films, such as relative permittivity and loss tangent, showed high dependency on the frequency. In this study, some techniques of powder pre-treatments to improve the dielectric properties of alumina thick films will be shown and the effects of starting powders on the properties of AD films will be discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.1
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• pp.37-46
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• 2003

The transient responses on arbitrarily interconnected digital transmission lines are analyzed by an efficient node discretization technique. Since the proposed node discretization technique offers an efficient means to discretize transmission lines, the transient waveform at any position on the arbitrarily interconnected lines is easily predicted. Dispersive microstrip multiconductor transmission lines arbitrarily connected are analized for generality. The derivation of frequency-dependent equivalent circuit elements of coupled transmission lines have been carried out by the spectral domain approach(SDA). The effects of variations of excited pulse width on the crosstalks of the high-speed microstrip coupled-lines are also investigated. It has been well known that the crosstalk spike level is monotonously increased when the coupling length and effective permittivity of substrate are increased. In this paper, it is found that the variations of crosstalk level are not further monotonous as shortening the exciting pulse width toward several picosecond. The results are verified by the generalized S-parameter technique.