• Journal of Korean Vacuum Science & Technology
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• 제4권2호
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• pp.50-54
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• 2000

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))

• Journal of Magnetics
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• 제6권3호
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• pp.77-79
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• 2001

The semi-empirical superposition model has been applied to calculate the zero field splitting parameters of $Mn^{2+}$ion in $LiTaO_3$ single crystal, assuming that $Mn^{2+}$ion occupies one of two possible sites: $Li^{l+} \;or\; Ta^{5+}$ site, respectively. The 2nd-order axial zero field splitting parameters are $958\times10^{-4}cm^{-1}\; at\; Li^{1+}$ site and $193\times 10^{-4}cm^{-1} \;at\; Ta^{5+}$ site for $Mn^{2+}$ions. The 4th-order zero field splitting parameters at $Li^{l+} \;and\; Ta^{5+}$ sites are also determined. These calculated zero field splitting parameters are very important to determine the substitutional sites of doped impurity ions in $LiTaO_3$ crystal.

• Animal cells and systems
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• 제2권1호
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• pp.117-122
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• 1998

D-raf, a Drosophila homolog of the human c-raf-1, is known as a signal transducer in cell proliferation and differentiation. A previous study found that the D-raf gene expression is regulated by the DNA replication-related element (DRE)/DRE-binding factor (DREF) system. In this study, we found the sequences homologous to transcription factor C/EBP, MyoD, STAT and Myc recognition sites in the D-raf promoter. We have generated various base substitutional mutations in these recognition sites and subsequently examined their effects on D-raf promoter activity through transient CAT assays in Kc cells with reporter plasmids p5'-878DrafCAT carrying the mutations in these binding sites. Through gel mobility shift assay using nuclear extracts of Kc cells, we detected factors binding to these recognition sites. Our results show that transcription factor C/EBP, STAT and Myc binding sites in D-raf promoter region play a positive role in transcriptional regulation of the D-raf gene and the Myo D binding site plays a negative role.

• 한국전통조경학회지
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• 제40권1호
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• pp.74-80
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• 2022

유적지의 식생은 일부 과거부터 잔존하는 식생형태이지만 근·현대 이르러 산업화에 따른 도시개발로 인해 식생과 지형이 변형되거나 훼손이 많아졌다. 이에 대한 해결방안으로 유적지 내 잔존하는 식생과 경관을 지표로 참고하여 복원 및 관리를 위한 계획을 수립하는 것이 필요하다. 본 연구는 서울 백제역사유적지인 풍납토성과 몽촌토성을 대상으로 입지 특성, 현존식생, 과거 대상식생의 잔존식생을 비교·분석하여 서울 백제역사유적지 식생 및 경관 관리를 위한 기초자료로 제공하기 위해 수행되었다. 연구 결과 풍납토성과 몽촌토성의 입지 특성은 한강 본류 부근에 위치하며 풍납토성은 자연제방과 범람원으로 구성된 평지에, 몽촌토성은 구릉지에 입지하고 있다. 현존식생의 경우, 풍납토성은 조경수목식재지가 주로 나타나는 반면 몽촌토성은 마을과 구릉 저지대에 생육하는 과거의 잔존수종이 분포하는 것으로 확인되었다. 과거 풍납토성과 몽촌토성 주민들에 의해 관리된 대상식생은 입지 특성과 현존식생을 바탕으로 종합한 결과 구릉지에는 갈참나무, 신갈나무 등, 건조지에는 소나무, 하천 및 지류에는 버드나무, 가래나무, 오리나무, 산림 주연부에는 상수리나무, 마을 초입에는 신목으로 소나무, 버드나무, 느티나무 등이 분포하였을 것으로 추정된다. 1960년대 이후 풍납토성과 몽촌토성 내에 외래수종의 도입과 시가지 조성 등으로 과거의 대상식생은 모두 사라졌으며 경관 또한 훼손되었다. 다행히도 성벽을 따라 일부 분포하는 잔존수종과 기후, 입지 특성, 시대상을 고려하여 대상식생을 추정하였으나 본 연구는 문헌과 현존식생 조사를 중심으로 진행된 연구이므로 향후 식물 유체 분석 등 정량적인 실험을 통해 서울 백제역사유적지 내 과거의 대상식생을 보완하는 과정이 필요하다.

• KIEAE Journal
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• 제4권2호
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• pp.37-40
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• 2004

New visible photocatalyst(Nanovis$^{(R)}$) has been synthesized to overcome the barrier of limitation of UV light utilization of current $TiO_2$ photocatalyst. It was found that red shift of absorption spectrum to 550nm was achieved. Its physical properties were characterized by XRD, BET and TEM. It is also observed that Nanovis$^{(R)}$ has a photocatalytic activity for photodegradation of Trichloroethylene under visible light irradiation. V,VII group doped into substitutional sites of $TiO_2$ has proven to be indispensable for band-gap narrowing and photocatalytic activity. These test results lead us to conclude that Nanovis$^{(R)}$ can be used for IAQ improvemen and for photocatalytic water splitting to hydrogen.

• 한국세라믹학회지
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• 제37권8호
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• pp.799-804
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• 2000

Coulometric titration experiments have been done for copper doped cobaltous oxide (Co1-xCux)1-$\delta$ O with various dopant concentrations. We present the obtained experimental data and compare our results to those of previous thermogravimetric investigation. The experimental data are fitted by theoretical calculations based on various defect models. For this modeling, we considered different types fo major defects like copper in substitutional and interstitial lattice sites as well as copper vacancy. We also introduced the copper evaporation effect during titration experiment into our consideration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• 한국분말재료학회지
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• 제24권6호
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• pp.477-482
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• 2017

Nitrogen-doped titanium dioxide (N-doped $TiO_2$) is attracting continuously increasing attention as a material for environmental photocatalysis. The N-atoms can occupy both interstitial and substitutional positions in the solid, with some evidence of a preference for interstitial sites. In this study, N-doped $TiO_2$ is prepared by the sol-gel method using $NH_4OH$ and $NH_4Cl$ as N ion doping agents, and the physical and photocatalytic properties with changes in the synthesis temperature and amount of agent are analyzed. The photocatalytic activities of the N-doped $TiO_2$ samples are evaluated based on the decomposition of methylene blue (MB) under visible-light irradiation. The addition of 5 wt% $NH_4Cl$ produces the best physical properties. As per the UV-vis analysis results, the N-doped $TiO_2$ exhibits a higher visible-light activity than the undoped $TiO_2$. The wavelength of the N-doped $TiO_2$ shifts to the visible-light region up to 412 nm. In addition, this sample shows MB removal of approximately 81%, with the whiteness increasing to +97 when the synthesis temperature is $600^{\circ}C$. The coloration and phase structure of the N-doped $TiO_2$ are characterized in detail using UV-vis, CIE Lab color parameter measurements, and powder X-ray diffraction (XRD).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.