• Journal of the Korean Society of Industry Convergence
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• v.5 no.3
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• pp.209-212
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• 2002

The change of surface structures for the deposition of Sn, In on clean Si(111) surface is investigated as a function of surface coverage by RHEED system. For tin submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structures are observed depending on the coverage and substrate temperature. For indium submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$, ${\sqrt{31}}{\times}{\sqrt{31}}$, $1{\times}1$ structures are observed. We find that at substrate temperature of $500^{\circ}C$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is formed at tin coverages of 0.2~0.4 ML and at indium coverages of 0.1~0.3 ML, respectively. From the desorption process, the desorption energies of Sn, In in ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is observed to he 3.25 eV, 2.66eV, respectively.

• Journal of Magnetics
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• v.7 no.4
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• pp.151-155
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• 2002

In situ stress changes at interfaces of ultrathin magnetic films were measured by means of a non-contact optical fiber bundle displacement detector. A bending of the substrate due to stress of a deposited film was detected in cantilever geometry. The highest sensitivity of 134 mV/$\mu$m for the displacement detector was realized with a help of computer simulation. The detector was applied to in situ stress measurements of Co/Pt and Ni/Pd magnetic multilayer films prepared on the glass substrates by dc magnetron sputtering. The detector turned out to have a submonolayer sensitivity that enables to observe coherent-to-incoherent transition in these mismatched multilayers and even detect the stress changes within the monoatomic coverage. This highly sensitive detector paves new way to probe the stress relaxation at an interface in ultrathin films.

• Journal of the Korean Chemical Society
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• v.22 no.5
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• pp.289-294
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• 1978

In this paper, for the purpose of studying the adsorbed states of benzene and p-xylene molecules on both of the Spheron 6(graphitized carbon) and the Alucer(aluminium oxides), we have calculated the differential molar entropies of adsorption in the Submonolayer region, by the use of statistical thermodynamics. The models we have adopted are two-dimensional gases and the harmonic oscillators. The values calculated in this way are compared with experimental values. As a result, it is believed that the adsorbed benzene molecules are localized on the Spheron 6, whereas on the Alucer it is nonlocalized. The molecular frequency, which is an adjustable parameter and is introduced as a result of oscillator model is $10^{11}\;sec^{-1}$ in the order of magnitude. For the case of p-xylene molecules adsorbed on these adsorbents, an abnormal result is obtained quite prior to the monolayer coverage, contrarily to the expectation of similar results as for the case of benzene.

• Journal of Magnetics
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• v.4 no.4
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• pp.107-110
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• 1999

In order to investigate the magnetism of Ru submonolayer on Pb(001), we have performed first-principles calculations for half-layer of Ru on Pd(001) using the full-potential linearzed augmented plane wave (FLAPW) method. We have found that the magnetic moment of Ru for 0.5 layer is 2.21 B. It is found that substrate Pd layers are polarized by the 0.5 Ru overlayer to have significant magnetic moments. Our results are compared with those obtained by the anomalous Hall effect. The calculated electronic structures, i,e., the spin densities and density of states are presented and discussed in relation with magnetic properties.

• Bulletin of the Korean Chemical Society
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• v.12 no.2
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• pp.138-143
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• 1991

Laser Raman spectroscopy has been used to study the interaction of $MoO_3$ with $TiO_2$. The bulk molybdenum oxide appeared to spread on the surface of titania under the submonolayer coverage. The surface polymolybdate was observed to be very stable with respect to the repeated treatment of reduction and subsequent calcination. Owing to the interaction of molybdate and titania, the phase transformation of $TiO_2$ seemed to be strongly retarded. The additives such as Co and Ni reacted readily with $MoO_3$ to form the corresponding molybdate salts. Nevertheless, the polymolybdate species appeared to be more stable on the titania surface than the molybdate salts.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.109-112
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• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.159-164
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• 1997

We have studied initial oxidation of the alkali metal(AM)/Si(111) surface using X-ray photoelectron spectroscopy(XPS) and reflection high energy electron diffraction(RHEED) at room temperature(RT) and high temperature(HT)(300~50$0^{\circ}C$). The oxidation of the Si(111)7$\times$7 surface was promoted by the adsorption of 1 momolayer(ML) AM, whereas no promotion occurred for submonolayer(<0.5 ML) adsorbed Si(111)7$\times$7 surface at RT. O Is core level spectra were measured with increasing oxygen exposure. It was found that the oxygen adsorbed on the Si(111)7$\times$7-AM surface have two different bond configuration, Si-O and Am-O, respectively. From these results, we discussed the role of AM-O bonding in the promoted oxidation. At HT(300~50$0^{\circ}C$), the AM-adsorbed surface became very inactive with the structural transformation to the 3$\times$1-AM. We present the results of the oxidation of the Si(111)3$\times$1-AM(Na, K, Cs) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.