• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.85-92
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• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.2
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• pp.195-203
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• 2000

The local heat/mass transfer coefficients for arrays of impinging circular air jets on a plane surface are determined by means of the naphthalene sublimation method. Fluid from the spent jets is constrained to flow out of the system in one direction. Therefore, the spent fluid makes a crossflow in the confined space. The present study investigates effects of jet-orifice-plate to impingement-surface spacing and jet Reynolds number. The spanwise- and overall-averaged heat/mass transfer coefficients are obtained by numerical integrating the local heat transfer coefficients. The local maximum heat/mass transfer coefficients move further in the downstream direction due to the increase of crossflow velocity. At the mid-way between adjacent jets, the heat/mass transfer coefficients have a small peak owing to the collision of the adjacent wall jets and are affected strongly by the crossflow. The effect of the crossflow occurs strongly at the small orifice-to-impingement surface distance.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.7 s.262
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• pp.628-634
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• 2007

The present study investigated the heat/mass transfer characteristics in an equilateral triangular channel simulating the leading edge cooling passage in gas turbine blade. Using naphthalene sublimation method and pressure measurement experiments, local mass (heat) transfer and pressure coefficients were obtained. The experiments were conducted with three rotating numbers between 0.0 and 0.1; two channel orientations of $0^{\circ}$ (model A) and $30^{\circ}$ (model B); the fixed Reynolds number of 10,000. The results showed that the channel rotation caused the heat transfer discrepancy between suction and pressure sides. Due to the secondary flow induced by Coriolis force, the high heat transfer appeared on the pressure side. When the channel orientation was $30^{\circ}$ (model B), the secondary flow caused the more uniform heat transfer distribution among leading edge and inner wall on pressure side than that of the model A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• Applied Microscopy
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• v.46 no.2
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• pp.76-82
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• 2016

Aloe vera has been used in the pharmaceutical, food and cosmetic industry for its therapeutic properties. However, there are not many current studies on the microstructure of A. vera compared to studies on the chemical constituents and health efficacy of A. vera. Therefore, we compared the morphology of an A. vera leaf using an optical microscope, a conventional scanning electron microscope (SEM) and a cryo-SEM. Especially, this study focused on observing the gel in the inner leaf of A. vera, which is challenging using standard imaging techniques. We found that cryo-SEM is most suitable method for the observation of highly hydrated biomaterials such as A. vera without removing moisture in samples. In addition, we found the optimal analytical conditions of cryo-SEM. The sublimation conditions of $-100^{\circ}C$ and 10 minutes possibly enable the surface of the inner leaf of A. vera to be observed in their "near life-like" state with retaining moisture. The experiment was repeated with A. arborescens and A. saponaria to confirm the feasibility of the conditions. The results of this study can be applied towards the basic research of aloe and further extend previous knowledge about the surface structures of the various succulent plants.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Journal of Conservation Science
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• v.31 no.4
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• pp.351-360
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• 2015

This is the result of the study on the temporary fortifier using sublimation type Consolidate is Cyclododecane to prepare plan for reinforcement of the surface part that can be damaged during the dismantling of stone cultural heritages. To supplement the disadvantages of the existing reinforcement methods using intumescent urethane foam, Cyclododecane was diluted in solvent to reinforce the surface and inside desquamation, and after dismantling the framework, it sublimated by imposing heat of about $60^{\circ}C$. Such method can guarantee the strength needed for reinforcement of the damaged surface with outstanding reversibility of Cyclododecane being entirely sublimated. But, it shows big difference of effect according to the solvent, so it shall be diluted in petroleum ether or heated in a double boiler. Therefore, considering the working conditions at the site, it seems the most appropriate to use petroleum ether double boiler heating method for injection and filling of the desquamation part and temporary reinforcement processing with Cyclododecane diluted in petroleum ether for surface spraying.

• Journal of the Korean Chemical Society
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• v.39 no.5
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• pp.384-392
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• 1995

Steady-state sublimation vapour pressures of anhydrous bismuth trichloride have been measured by the continuous gravimetric Knudsen effusion method from 370.6 to 488.8 K. Additional effusion measurements have also been made from 438.2 to 495.7 K by the torsion effusion method. Based on a correlation of ${\Delta}_H0298$.15 and ${\Delta}_H0298$.15, a recommended p(T) equation has been obtained for BiCl3(s); log(p/Pa)=－C/(T/K)－2.838log(T/K)－8.097${\times}$10-2(K/T)2＋22.588, where p is in Pa, T in Kelvin and ${\Delta}_H0298$.15 in kJmo1-1 and C=(${\Delta}_H0298$.15＋5.9988)/1.9146${\times}$10-2. Condensation coefficients and their temperature dependence have been derived from the effusion measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.185-190
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• 1997

The 6H-SiC single crystals were grown using a self-designed crystal grower by the sublimation method. The grown crystals were typically 30 mm in diameter and 10 mm in length. Optimum growth conditions were established as follows : the temperature of the raw material was $2150~2250^{\circ}C$, the temperature of the substrate was $1950~2050^{\circ}C$, the temperature difference between the raw material and substrate was about $200^{\circ}C$, growth pressure was 50~200 torr and growth rate was 300~700 $\mu\textrm{m}$/hr. Optical microscopy was used for observing the surface of the 6H-SiC single crystal grown and the phenomenological approach was performed on the formation mechanism of the defects in the 6H-SiC crystal. Especially, the micropipes in the as-grown surface were examined to determine the formation mechanisms of the micropipes.