• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.7-12
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• 2015

Up to ${\sim}520{\mu}J$ broadband mid-infrared (IR) supercontinuum (SC) generation in telecommunication multimode fiber (MMF) directly pumped by a $2.054{\mu}m$ nanosecond Q-switched Tm, $Ho:YVO_4$ laser is demonstrated. An average output power of 3.64 W is obtained in the band of ~1900 to ~2600 nm, and the corresponding optic-to-optic conversion efficiency is 67% by considering the coupling efficiency. The spectrum has extremely high flatness with negligible intensity variation (<2%) in the wavelength interval of ~2070 to ~2475 nm. The SC long-wavelength edge is limited by the silicon glass material loss, and by optimizing the MMF length, the SC spectrum could extend out to ${\sim}2.6{\mu}m$. The output SC pulse shapes are measured at different output powers, and no splits are found. The SC laser beam is nearly diffraction limited with an $M^2=1.15$ in $2.1{\mu}m$ measured by the traveling knife-edge method, and the laser beam spot is monitored by an infrared vidicon camera.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.35-39
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• 2003

This paper is contents on the orthorhombic crystalline calcined by the solid phase method with LiMnO$_2$ thin film structured as the result which an average pore diameter of power was 132.3${\AA}$ in porosity analysis. Voltage ranges are able to get the properties of charge and discharge for experimental results of LiMnO$_2$ thin film were 2.2V 4.3V. The current density and scan speed were 0. 1㎃/$\textrm{cm}^2$ and 0.2㎷/sec respectively. Properties of the charge and discharge are obtained by optimum experiment condition parameters. Li dense ratio of the LiMnO$_2$ thin film that discharged capacities were 87㎃h/g have been 96.9［ppm］ at 670.784［nm］ wavelength. The dense ratio of Mn analyzed to 837［ppm］ at 257.610［nm］ wavelength. It can be estimated the quality of the LiMnO$_2$ thin film as that the wrong LiMnO$_2$ thin film pulled up from cell of electrolyte and became dry it at 800$^{\circ}C$. The results of SEM and XRD were the same as that of original researchers.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.139-143
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• 2012

Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has been suggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoring capability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically established methods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysis of plasma etch process and this is done by investigating reactants and by-product gas species that reside in the plasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients. Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present the importance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peak selection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosion during a series of $SiO_2$ etch processes using the same recipe. From the experimental verification, we convinced that OES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis of suspicious plasma behavior.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.685-690
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• 2014

Microholographic gratings were prepared on an aluminum oxide ($Al_2O_3$) surface using a 140-fs pulse at a center wavelength of 800 nm. The $Al_2O_3$ was deposited on a silicon wafer and on indium tin oxide glass to a thickness of approximately 25 nm using an atomic layer deposition process. The silicon wafer substrate exhibited reflection-type gratings that were measured as a function of the incidence angle. The diffraction efficiency of the fabricated gratings was measured, with a maximum diffraction efficiency of 45% at an incidence angle of approximately $30^{\circ}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.775-779
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• 2006

In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

• ETRI Journal
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• v.46 no.4
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• pp.716-726
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• 2024

An ultrawide stopband lowpass filter is reported using three stepped impedance resonators with high selectivity. The filter extends the stopband frequency range and attenuation, and two quarter-wave open stubs and three circular ground slots are introduced. The lumped and distributed equivalent models are derived and analyzed. The corresponding results are validated experimentally in a fabricated prototype. The prototype lowpass filter has a 3 dB cutoff frequency (f_c) of 2.9 GHz, and the stopband is extended up to 35 GHz (12.07f_c), with an attenuation level better than 20 dB throughout. The passband-to-stopband transition (3 dB-20 dB) bandwidth is 0.18 GHz, and the roll-off factor is 135 dB/GHz at 30 dB. The insertion loss is 0.3 dB at 1.6 GHz. The normalized circuit size of the proposed filter with respect to the guided wavelength is 0.04.

• Journal of Mushroom
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• v.11 no.1
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• pp.24-31
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• 2013

As a result of advenced research, Penicillium growth inhibition effect in media of cauliflower mushroom by different LED lighting color inhibited all treated groups, but blue wavelength treatment group was unfitted for culture of cauliflower mushroom due to lots of spore of penicillium. So, to investigated characteristics of mycelial growth of cauliflower mushroom according to different LED wavelength and LED wavelength color. As a results, all red wavelength treatment groups found highest mycelial growth tendency. Thus, mycelial growth investigated different quantity of red lighting wavelength conditions. The quantity of lighting wavelength was low intention, 1.41 ${\mu}mol/m^2S$ treatment group found highest mycelial growth. Effects of mycelial growth by subculture found difference of statistical in one time to carry out a subculture treatment group. Mycelial growth by different quantity of LED lighting in different media composition of wood chip media indicated highest trend in the Korean pine treatment groups. To cultured treatment group for 84th days found difference of statistical, when a quantity of LED lighting red wavelength 2.11 ${\mu}mol/m^2S$ treated in wood chip of the Korean pine media. In conclusion, good culture condition of cauliflower mushroom estimated quantity of red lighting wavelength 2.11 ${\mu}mol/m^2S$ in wood chip media of the Korean pine for 84th days.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.1-8
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• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.