• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.72-78
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• 1998

An optical modulator Ti:LiNbO$_3$optical waveguide and CPW electrode structure were fabricated. The optical modulator was packaged using components such as ferrules, dirmy LN block and glass, vibration and shock absorbption pad, and alumina feeder through processings of pigtailing. Au wire bonding, epoxing, SMA connecting, sealing. The electrical and optical characteristics were measured after packaging. The electrical properties of S$_{21}$ and S$_{11}$ were obtained as 9.8 GHz at -3 dB and -8.9dB at 14.4GHz, respectively. Optical waveguide prepared met requirements for a single mode at a 1550nm wavelength range. Insertion loss was 4.3dB at room temperature after packaging, and was varied 4.3~6.4dB at various temperatures, 5~45$^{\circ}C$. E-O bandwidth measurement showed 3dB optical response at 7.8GHz, which means that it is applicable for 10Gbps optical communicationon

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.153-159
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• 2009

A CMOS frequency synthesizer for $5{\sim}6$ GHz UNII-band sub-harmonic direct-conversion receiver has been developed. For quadrature down-conversion with sub-harmonic mixing, octa-phase local oscillator (LO) signals are generated by an integer-N type phase-locked loop (PLL) frequency synthesizer. The complex timing issue of feedback divider of the PLL with large division ratio is solved by using multimodulus prescaler. Phase noise of the local oscillator signal is improved by employing the ring-type LC-tank oscillator and switching its tail current source. Implemented in a $0.18{\mu}m$ CMOS technology, the phase noise of the LO signal is lower than -80 dBc/Hz and -113 dBc/Hz at 100 kHz and 1MHz offset, respect-tively. The measured reference spur is lower than -70 dBc and the power consumption is 40 m W from a 1.8 V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.2
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• pp.49.1-49.1
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• 2021

We carried out simultaneous monitoring observations of five maser lines, H₂O (22 GHz), SiO 𝝊 =1, 2, J =1-0 (43.1, 42.8 GHz), and SiO 𝝊 =1, J=2-1, J =3-2 (86.2, 129.3 GHz), toward the Mira variable star WX Serpentis with the 21-m antennas of the Korean VLBI Network (KVN) in 2009-2021 (~12 years). Most spectra of the H₂O maser are well separated into two parts of two blue- and one redshifted features within ± 10 km s-1 of the stellar velocity. All detected SiO masers are generally concentrated within ± 5 km s-1 of the stellar velocity, and sometimes appear split into two components. Overall, the profiles of SiO and H₂O masers detected in WX Serpentis illustrate typical characteristics of the Mira variable. In addition, flux variations of both SiO and H₂O masers are well correlated with the optical light curve of the central star, showing a phase lag of ~ 0.1 for SiO masers and ~ 0.2 for H₂O maser. This phenomenon is considered to be the direct effect of propagating shock waves generated by the stellar pulsation, because SiO and H₂O masers are sequentially distributed at different positions with respect to the central star. In addition, we analyzed long-term trends and characteristics of maser velocities, maser ratio, and the velocity extents (the full width at zero power; FWZP). We also investigated a spectral energy distribution (SED) ranging from 1.2 to 240 ㎛ obtained using several infrared data: 2MASS, WISE, IRAS, ISO, COBE DIBRE, RAFGL, and AKARI (IRC and FIS). From the IRAS LRS and ISO SWS spectra of this star, we identified 9.7 and 12 ㎛ silicate emission features consistent with the SE6 spectrum model, corresponding to the typical AGB phase.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.1A
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• pp.134-141
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• 2007

This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.360-364
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• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..

• ETRI Journal
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• v.43 no.6
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• pp.957-965
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• 2021

A miniaturized wideband band-pass filter with a 3-dB fractional bandwidth of 109.3% (1.53 GHz to 5.22 GHz), high out-of-band attenuation greater than 25 dB, and wide upper stopband up to 14 GHz is proposed. The design consists of a dual-composite right/left handed resonator, embedded open-circuited stub, and a pair of quarter-wavelength short-circuited stubs. These elements are coupled in the near distance to form a miniature filter with a compact occupied area of 0.21 λ_g×0.19 λ_g (≈ 0.013 cm²). The optimized filter has multitransmission poles in the passband, substantially improving the return loss and insertion loss characteristics. The behavior of the passband and stopband is verified against the results of a lumped element model and matrix analysis with a full-wave moment-based analysis and actual measurements. The results of this verification and a comparison with the performance of filters in other references indicate that the proposed filter is very efficient and applicable to compact microwave systems.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.55-61
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• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.201-205
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• 2007

Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).