• Title/Summary/Keyword: sub-6 GHz

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Design and Fabrication of Quadruple Band Antenna with DGS (DGS를 적용한 4중대역 안테나의 설계 및 제작)

  • Kim, Min-Jae;Choi, Tea-Il;Choi, Young-Kyu;Yoon, Joong-Han
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.1
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    • pp.31-38
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    • 2020
  • In this paper, we propose a quadruple band antenna for GPS/WLAN/WiMAX application. The proposed antenna has quadruple band characteristics by considering the interconnection of four strip lines and DGS on the ground place. The total substrate size is 20.0 mm (W1) ⨯27.0 mm (L1), thickness (h) 1.0 mm, and the dielectric constant is 4.4, which is made of 20.0 mm (W2)⨯ 27.0 mm (L8 + L6+ L10) antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 60 MHz (1.525 to 1.585 GHz) bandwidth for GPS band, 825 MHz (3.31 to 4.135 GHz) bandwidth for WiMAX band and 480 MHz (2.395 to 2.975 GHz) and 385 MHz (5.10 to 5.485 GHz) bandwidth for WLAN band were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency of triple band as required.

Analysis of PHEMT's Characteristics by Gate Recesses (게이트 리세스 식각 방법에 따른 PHEMT 특성 분석)

  • 임병옥;이성대;김성찬;설우석;신동훈;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.644-650
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    • 2003
  • In this paper, we have studied characteristics of PHEMT's fabricated by two difference types of gate recess for improving performance of the device in millimeter wave applications. PHEMT's were fabricated using wide and narrow recesses. Maximum transconductance(g$_{m}$) of PHEMT's using the wide recess was 332.7 mS/mm, and that of PHEMT's using narrow recess was 504.6 mS/mm. From small signal performance measurements, cutoff frequency(f$_{T}$) and maximum stable oscillation frequency(f$_{max}$) of PHEMT's using wide recess were 113 GHz and 172 GHz, respectively. f$_{T}$ and f$_{max}$ of PHEMT using narrow recess were 101 GHz and 142 GHz, respectively. The measured data of the fabricated PHEMTs' were carefully studied and analyzed.d.tudied and analyzed.

Evaluation of ECCD power requirement for neoclassical tearing modes suppression in the CFETR hybrid scenario

  • L.H. He;P.W. Zheng ;T. Yu
    • Nuclear Engineering and Technology
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    • v.55 no.8
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    • pp.2941-2951
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    • 2023
  • The optimal minimum ECCD power is evaluated numerically for completely suppressing the 3/2 and 2/1 NTMs in the CFETR hybrid scenario. For two typical frequencies of ECCD sources launching from two upper launcher (UL) ports, fec = 210 GHz and 240 GHz with O1-mode, UL1: (Ri, Zi) = (8.47, 5.7) m and UL2: (Ri, Zi) = (8.2, 4.5) m, higher frequency of ECCD source launching from the UL2 port is better than that low frequency counterpart from the UL1 port. Using 240 GHz ECCD source launching from the UL2 port, the minimum power required to fully suppress the two NTMs with precise ECCD alignment is 12.4 MW and 16.7 MW, respectively. When good alignment cannot be achieved, the results suggest that the misalignment should not exceed 0.02α, preferably 0.015α, corresponding to 4.4 cm and 3.3 cm. Considering engineering difficulty of high-frequency gyrotron sources, the optimal minimum ECCD power with the 210 GHz source launching from the UL2 port is 17.9 MW and 20.6 MW for completely suppressing the 3/2 and 2/1 NTMs, respectively. In view of this, it is a good choice to select the 210 GHz ECCD source launching from the UL2 port in the short and medium term.

E-band low-noise amplifier MMIC with impedance-controllable filter using SiGe 130-nm BiCMOS technology

  • Chang, Woojin;Lee, Jong-Min;Kim, Seong-Il;Lee, Sang-Heung;Kang, Dong Min
    • ETRI Journal
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    • v.42 no.5
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    • pp.781-789
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    • 2020
  • In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (Rs) and parallel (Rp) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S21 at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S21 of 16 dB to 21 dB, input matching (S11) of -14 dB to -5 dB, and output matching (S22) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

Fabrication of a Novel Ultra Low Temperature Co-fired Ceramic (ULTCC) Using BaV2O6 and BaWO4 (BaV2O6와 BaWO4을 이용한 초저온 동시소성 세라믹 제조)

  • Kim, Duwon;Lee, Kyoungho
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.11-18
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    • 2021
  • A novel microwave dielectric composite material for ultra-low temperature co-fired ceramics (ULTCC) with (1-x)BaWO4-xBaV2O6 (x=0.54~0.85) composition was prepared by firing a mixture of BaWO4 and BaV2O6. Shrinkage tests showed that the ceramic composite begins to densify at a temperature as low as 550℃ and can be sintered at 650℃ with 98% of relative density under the influence of BaV2O6. X-ray diffraction analysis showed that BaWO4 and BaV2O6 coexisted and no secondary phase was detected in the sintered bodies, implying good chemical compatibility between the two phases. Near-zero temperature coefficients of the resonant frequency (𝛕f) could be achieved by controlling the relative content of the two phases, due to their positive and negative 𝛕f values, respectively. With increasing BaV2O6 (x from 0.53 to 0.85), the 𝛕f value of the composites increased from -7.54 to 14.49 ppm/℃, εr increased from 10.08 to 11.17 and the quality factor (Q×f value) decreased from 47,661 to 37,131 GHz. The best microwave dielectric properties were obtained for x=0.6 samples with εr=10.4, Q×f=44,090 GHz, and 𝛕f=-2.38 ppm/℃. Chemical compatibility experiments showed the developed composites are compatible with aluminum electrode during co-firing process.

Design and fabrications of AlGaAs/InGaAs/GaAs Power PHEMT (AlGaAs/InGaAs/GaAs Power PHEMT 설계.제작)

  • 이응호;조승기;윤용순;이일형;이진구
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.12-15
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    • 2000
  • In this paper, we have fabricated the PHEMT's with AlGaAs/InGaAs/GaAs and measured characteristics of DC and frequencies. The PHEMT's has a 0.35$\mu\textrm{m}$ gate length, gate width of 60$\mu\textrm{m}$ and 80$\mu\textrm{m}$, and fingers of 2 and 4. From the measurements results for the 60$\mu\textrm{m}$ ${\times}$ 2 PHEMT's, we obtained 1.2V of Vk, -3.5V of Vp, 46mA of Idss, 221mS/mmof gm, and 3.6dB of S$\sub$21/ gain, 45GHz of f$\sub$T,/ 100GHz of fmax. And, in case of 80$\mu\textrm{m}$ ${\times}$ 4 PHEMT's, we obtained 1.2V of Vk, -4.5V of Vp, 125mA of Idss, 198mS/mm of gm, and 2.0dB of S$\sub$21/ gain. 44GHz of f$\sub$T/, 70GHz of fmax at 35GHz frequency. Also, MAG are decreased as a number of finger are Increased.

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Influence of Nd2O3 Addition to 0.3CaTiO3-0.7(Li1/2Nb1/2)TiO3 on their Microwave Dielectric Properties (Nd2O3 첨가가 0.3CaTiO3-0.7(Li1/2Nb1/2)TiO3 세라믹스의 마이크로파 유전특성에 미치는 영향)

  • 김범수;박일환;윤상옥;김경용
    • Journal of the Korean Ceramic Society
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    • v.39 no.1
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    • pp.26-32
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    • 2002
  • The effects of $Nd_2O_3$ addition to $Q{\cdot}f_{0}(GHz)$ ceramics with ${\varepsilon}_r$ of 126, $Q{\cdot}f_{0}(GHz)$ of 2240 and of $68\;ppm/^{\circ}C$ on their microwave properties were investigated. For the addition of 5 wt% $Nd_2O_3$, the dielectric constant (${\varepsilon}_r$) showed maximum value of 131, then decreased with the further addition of $Nd_2O_3$. $Q{\cdot}f_{0}(GHz)$ value was still increased to 3533 with 9 wt% $Nd_2O_3$ addition, it is influenced by densification of grain boundary. With more addition of $Nd_2O_3$ up to 18 wt%, the abnormal grain growth have influence on the decreasing of $Q{\cdot}f_{0}(GHz)$ value. But with the further addition of $Nd_2O_3$ over 25 wt%, the $Q{\cdot}f_{0}(GHz)$ value was again increased by the effect of the second phase ($Nd_2Ti_2O_7$) forming. The temperature coefficient of resonant frequency (${\tau}_f$) was decreased from $+\;68\;ppm/^{\circ}C$ with the addition of $Nd_2O_3$, reached $0\;ppm/^{\circ}C$ at 12 wt% addition, and became negative with the further addition of $Nd_2O_3$. The optimum microwave dielectric properties were obtained for $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3$ with 9 wt% $Nd_2O_3$ sintered at $1425^{\circ}C$ for 3 hrs. The dielectric constant (${\varepsilon}_r$), the $Q{\cdot}f_{0}(GHz)$ value, and the temperature coefficient of resonant frequency (${\tau}_f$) were 108, 3533, and $+\;6\;ppm/^{\circ}C$, respectively.

Development of Printed Bow-tie Antenna with 3 ~ 5 GHz Broadband Characteristics for Testing the Electromagnetic Immunity of Automotive Electrical Components in the 5G Frequency Band (5G 주파수 대역의 자동차 전장품 전자기파 내성 평가를 위한 3 ~ 5 GHz 광대역 특성의 인쇄형 bow-tie 안테나 개발)

  • Ko, Ho-jin;Choi, Beom-jin;Park, Ki-hun;Woo, Jong-myung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.19 no.3
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    • pp.137-147
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    • 2020
  • This paper proposes printed bow-tie antennas with 3 ~ 5 GHz broadband characteristics were proposed for testing the electromagnetic immunity of automotive electrical components in the 5G frequency band. The antenna get -10 dB bandwidth in the 2.75 ~ 6 GHz frequency band and the broadside radiation pattern with S11 characteristic of -16.2 dB at resonant frequency. In testing electromagnetic immunity in the 5G mobile communication frequency band, the VSWR characteristic remained below 2.1, forming a level of 1 W as proposed by international standards. As a result, it is confirmed that the proposed antenna can be applied to antenna testing for electromagnetic immunity verification in the 5G mobile communication frequency band.

Implementation of An 1.5Gbit/s Wireless Data Transmission System at 300GHz Band (300GHz 대역 1.5Gbit/s 무선 데이터 전송 시스템 구현)

  • Lee, Won-Hui;Chung, Tae-Jin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.11 no.2
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    • pp.1-6
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    • 2011
  • In this paper, an 1.5Gbit/s wireless data transmission system using the carrier frequency of 300 GHz band was implemented. The RF front-end was composed of schottky diode sub-harmonic mixer, frequency tripler, and horn antennas for transmitter and receiver, respectively. The LO frequencies of sub-harmonic mixer are 150GHz for transmit chain and 156GHz for receive chain. The ASK(Amplitude Shift Keying) modulation was used in the transmitter and the envelope detection method was used in the heterodyne receiver. The conversion loss of sub-harmonic mixer and implementation system loss were measured to be 9.8dB and 1.2dB, respectively. The 1.5Gbit/s video signal with HD-SDI format was transmitted over wireless distance of 40cm without optical lens(4.2m with optical lens) and displayed on HDTV at the transmitted average output power of $20{\mu}W$.

High-$T_{c}$ Superconducting down-converter for Millimeterwave (밀리미터파용 고온초전도 다운-컨버터의 제작 및 고주파 특성 평가)

  • 강광용;김호영;김철수;곽민환
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.358-361
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    • 2002
  • The millirneterwave high-T$_{c}$ superconducting(HTS) down-converter sub-system with the HTS/III-V integrated mixer as the central device is demonstrated first. The constituent components of HTS down-converter sub-system such as a single balanced type integrated mixer with rat-race coupler, a cavity type bandpass filter (26 GHz), and a HTS planar lowpass filter(1 GHz), semiconductor LNA and IF-power amplifier, a driving electronic module for A/D converter, and a Stirling type mini-cooler module were combined into an International stand- and rack of 19-inch. From the RF(-61 dBm, 26.5GHz)and LO signal(-1 dBm, 25.6 GHz), IF signal(0dBm, 0.9 GHz) agreed with simulated results is obtained.d.

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