• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.224-226
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• 2004

CMP process requirements become tighter especially in sub-100nm technology. Especially, high planarity and low defectivity appear as leading issues in CMP technology. Also, the introduction of new materials and advanced lithography technique increases CMP applications. Here are listed some major issues and challenges in CMP technology, which can be categorized following four items. These have practical significance and should be considered more concretely for future generation.

• Current Applied Physics
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• 제18권11호
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• pp.1201-1204
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• 2018

The effect of electric current pulses on a sub-100 nm magnetic bubble state in a symmetric Pt/Co multilayer was directly observed using a full-field transmission soft X-ray microscope (MTXM). Field-induced evolution of the magnetic stripe domains into isolated bubbles with their sizes down to 100 nm was imaged under varying external magnetic fields. Electric current pulses were then applied to the created magnetic bubbles, and it was observed that the bubbles could be either created or annihilated by the current pulse depending on the strength of applied magnetic field. The results suggest that the Joule heating plays a critical role in the formation and/or elimination of the bubbles and skyrmions. Finally, the schematic phase diagram for the creation and annihilation of bubbles is presented, suggesting an optimized scheme with the combination of magnetic field and electric current necessary to utilize skyrmions in the practical devices.

• Journal of the Korean Ceramic Society
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• 제42권2호
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제22권8호
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• pp.641-644
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• 2009

We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.

• Proceedings of the Korea Crystallographic Association Conference
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• 한국결정학회 2003년도 춘계학술연구발표회
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• pp.9-9
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• 2003

최근에 Fe-CU, Fe-Si 등과 같이 자성금속과 비자성금속화합물에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 기계적 합금법으로 제작한 Co/sub 5/C/sub 95/ 나노미립상 합금의 구조와 자기적 성질을 조사하였다. 그림(1)은 EXAFS 스펙트럼의 푸리에변환이다. 이로부터 합금화시간에 따라 Co-Co 결합은 점차적으로 작아지며 Co-C 결합이 진행됨에 알수 있다. 그림(2)은 합금화시간에 따른 포화자화값과 보자력의 크기이다. 포화자화는 합금화 시간에 따라 연속적으로 작아졌으며 보자력은 커지다가 작아지는 경향을 보였다. 포화자화가 작아지는 것은 Co-C 결합이 생기면서 Co의 쌍을 이루지 않은 전자가 C의 전자와 쌍을 이루면서 상쇄되기 때문인 것으로 보인다. 보자력의 거동은 Co 미립자가 다자구영역으로부터 단자구영역으로 전환되기 때문인 것으로 해석될수 있다. Co 미립자는 C의 캡슐형에 싸여있으며 60시간과 100시간에서 Co 미립자의 크기는 X-ray 회절선의 넓어짐으로부터 Scherrerr 공식을 이용하여 계산한 결과 18nm 와 15nm 정도가 됨을 알 수 있었다. 연구를 통하여 Co/sub 5/C/sub 95/ 나노미립상합금을 기계적합금법으로 만들 수 있음을 알 수 있었다. 이론적인 계산에 의하면 초상자성 Co 입자의 크기는 8.2nm 정도가 되었으며 본 실험에서 최종 입자의 크기는 15nm까지 작아졌다.

• Journal of the Korean Magnetics Society
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• 제23권1호
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제30권7호
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• Korean Journal of Materials Research
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• 제27권2호
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• pp.100-106
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• 2017

Nanosized and aggregated $Y_2O_3:Eu$ Red phosphors were prepared by template method from metal salt impregnated into crystalline cellulose. The particle size and photoluminescent property of $Y_2O_3:Eu$ red phosphors were controlled by variation of the calcination temperature and time. Dispersed nanosol was also obtained from the aggregated $Y_2O_3:Eu$ Red phosphor under bead mill wet process. The dispersion property of the $Y_2O_3:Eu$ nanosol was optimized by controlling the bead size, bead content ratio and milling time. The median particle size ($D_{50}$) of $Y_2O_3:Eu$ nanosol was found to be around 100 nm, and to be below 90 nm after centrifuging. In spite of the low photoluminescent properties of $Y_2O_3:Eu$ nanosol, it was observed that the photoluminescent property recovered after re-calcination. The dispersion and photoluminescent properties of $Y_2O_3:Eu$ nanosol were investigated using a particle size analyzer, FE-SEM, and a fluorescence spectrometer.

• Journal of the Korean Ceramic Society
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• 제41권3호
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• pp.202-209
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• 2004

Hydroxyapatite(HA)/TiO$_2$ composite powders were prepared by mixing of spherical TiO$_2$ (10-15 nm, 500 nm) and needle-shaped HA (50-70 nm, 120-250 nm) powders which had been synthesized through precipitation, sol-gel and hydrothermal methods. From the three types of starting composite powders (HA/TiO$_2$ wt% of 75/25, 50/50, and 25/75), dense $\beta$-TCP/TiO$_2$ composites were prepared by hot-pressing at 800-100$0^{\circ}C$ for 30 min under the pressure of 30 ㎫ in Af atmosphere. The $\beta$-TCP/TiO$_2$ composites showed different microstructures and sintering densities depending on their powder morphology, composition and sintering temperature. With increasing the sintering temperature and the content of TiO$_2$, sintered density was increased and microstructure became more homogeneous.

• Korean Chemical Engineering Research
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• 제62권1호
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• pp.19-26
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• 2024

In this study, the electrochemical properties of SiOx@C composite materials were prepared to alleviate volume expansion and cycle stability of silicon and to increase the capacity of anode material for LIBs. SiO₂ particles of 100, 200, and 500 nm were synthesized by the Stӧber method, and reduced to SiOx (0≤x≤2) through the magnesiothermic reduction method. Then, SiOx@C anode materials were synthesized by carbonization of PVC on SiOx. The physical properties of prepared SiOx and SiOx@C anode materials were analyzed by XRD, SEM, TGA, Raman spectroscopy, XPS and BET. The electrochemical properties were investigated by cycling performance, rate performance, CV and EIS test. As a result, the SiOx@C-7030 manufactured by coating carbon at SiOx : C = 70 : 30 on a 100 nm SiOx with the smallest particle size showed the best electrochemical properties with a discharge capacity of 1055 mAh/g and a capacity retention rate of 81.9% at 100 cycles. It was confirmed that cycle stability was impoved by reducing particle size and carbon coating.