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Integrated-Optic Electric-Field Sensor Utilizing a Ti:LiNbO3 Y-fed Balanced-Bridge Mach-Zehnder Interferometric Modulator With a Segmented Dipole Antenna

  • Jung, Hongsik
    • Journal of the Optical Society of Korea
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    • v.18 no.6
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    • pp.739-745
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    • 2014
  • We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

Organic thin-film transistors and circuits manufactured by sub-femtoliter inkjets

  • Someya, Takao;Sekitani, Tsuyoshi;Noguchi, Yoshiaki;Yokota, Tomoyuki;Klauk, Hagen;Zschieschang, Ute
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1229-1232
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    • 2008
  • We have successfully manufactured high-quality top-contact organic thin-film transistors using inkjet technologies with sub-femtoliter droplet volume. Silver fine lines were directly patterned by inkjet on pentacene channel layers. The minimum width of silver lines was $1{\mu}m$ with without the need for pre-patterning or surface pretreatments. The mobility was $0.3\;cm^2/Vs$.

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

Approximate Coordinate Transformations for Simulation of Turbulent Flows with Wall Deformation

  • Kang, Sangmo
    • Journal of Mechanical Science and Technology
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    • v.16 no.5
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    • pp.703-709
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    • 2002
  • In the present paper, approximate coordinate transformations for simulation of turbulent flows with wall deformation, significantly reducing computational cost with little degradation in numerical accuracy, are presented. The Wavier-Stokes equations are coordinate-transformed with an approximation of Tailor-series truncation. The performance is evaluated by performing numerical simulations of a channel flow at Re$\sub$$\tau$/ = 140 with active wall motions of η$\sub$m/$\^$+/ $\leq$5. The approximate transformations provide flow structures as well as turbulence statistics in good agreement with those from a complete transformation [Phys. Fluids 12, 3301 (2000) ] and allow 25-30% savings in the CPU time as compared to the complete one.

Cooling Performance Analysis of Sub-scale Calorimeter (축소형 칼로리미터의 냉각성능 해석)

  • 조원국;문윤완
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2003.05a
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    • pp.9-12
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    • 2003
  • A cooling performance analysis has been made in the 8-channel calorimeter based on sub-scale KSR-III engine. Three-dimensional heat transfer analysis in cooling channels has been performed using the heat flux distribution through the chamber wall predicted from axi-symmetric compressible flow inside the combustion chamber. The heat flux distribution was verified against the published literature. Presented for the development and operation of the calorimeter are the coolant pressure drop, coolant temperature rise and the maximum chamber wall temperature.

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Adaptive Multi-stage Parallel Interference Cancellation Receiver for a Multi-rate DS-CDMA System (다중전송률 DS-CDMA 시스템을 위한 적응다단병렬간섭제거수신기)

  • 한승희;이재홍
    • Proceedings of the IEEK Conference
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    • 2001.06a
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    • pp.89-92
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    • 2001
  • In this paper, adaptive multi-stage parallel interference cancellation (PIC) receiver is considered for a multi-rate DS-CDMA system. In each stage of the adaptive multi-stage PIC receiver, multiple access interference (MAI) estimates are obtained using the sub-bit estimates from the Previous stage and the adaptive weights for the sub-bit estimates. The adaptive weights are obtained by minimizing the mean squared error between the received signal and its estimate through a least mean square (LMS) algorithm. It is shown that the adaptive multi- stage PIC receiver achieves smaller BER than the matched filter receiver, multi-stage PIC receiver, and multi-stage partial PIC receiver for the multi-rate DS-CDMA system in a Rayleigh fading channel.

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Approximate Coordinate Transformations for Simulation of Turbulent Flows with Active Wall Motions (능동적 벽 운동을 수반하는 난류유동의 해석을 위한 근사 좌표변환)

  • Gang, Sang-Mo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.25 no.11
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    • pp.1467-1475
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    • 2001
  • In the present paper, approximate coordinate transformations for simulation of turbulent flows with active wall motions, leading to a significant reduction in the computational cost while maintaining the numerical accuracy, are presented: the Navier-Stokes equations are coordinate-transformed with an approximation of Taylor-series truncation and neglect of some less-significant terms. The performance of the proposed transformations is evaluated in simulation of the channel flow at Re$\sub$$\tau$/=140 with wall deformations of │η$\sub$m/$\^$+/ 5. The approximate transformations provide flow structures as wall as turbulence statistics in good agreement with those from a complete coordinate transformation [Phys. Fluids 12, 3301 (2000)] and allow 25-30% savings in the CPU time as compared to the complete one.

Cooling Performance Analysis of a Sub-scale Calorimeter (축소형 칼로리미터의 냉각성능 해석)

  • 조원국;문윤완
    • Journal of the Korean Society of Propulsion Engineers
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    • v.7 no.3
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    • pp.8-14
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    • 2003
  • A cooling performance analysis has been made in the 8-channel calorimeter based on sub-scale KSR-III engine. Three-dimensional heat transfer analysis in cooling channels has been performed using the heat flux distribution through the chamber wall predicted from axi-symmetric compressible flow inside the combustion chamber. The heat flux distribution is verified against the published literature. Presented for the development and operation of the calorimeter are the coolant pressure drop, coolant temperature rise and the maximum chamber wall temperature. Required coolant flow rate is determined for given chamber pressure. Cooling performance is also predicted for temperature dependant coolant properties.

Sub-1.2-V 1-Gb Mobile DRAM with Ultra-low Leakage Current (극저 누설전류를 가지는 1.2V 모바일 DRAM)

  • Park, Sang-Kyun;Seo, Dong-Il;Jun, Young-Hyun;Kong, Bai-Sun
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.433-434
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    • 2007
  • This paper describes a low-voltage dynamic random-access memory (DRAM) focusing on subthreshold leakage reduction during self-refresh (sleep) mode. By sharing a power switch, multiple iterative circuits such as row and column decoders have a significantly reduced subthreshold leakage current. To reduce the leakage current of complex logic gates, dual channel length scheme and input vector control method are used. Because all node voltages during the standby mode are deterministic, zigzag super-cutoff CMOS is used, allowing to Preserve internal data. MTCMOS technique Is also used in the circuits having no need to preserve internal data. Sub-1.2-V 1-Gb mobile DDR DRAM employing all these low-power techniques was designed in a 60 nm CMOS technology and achieved over 77% reduction of overall leakage current during the self-refresh mode.

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Simulation of Source/Drain Doping Effects and Performance Analysis of MoS2 Transistor

  • Kim, Chul-min;Park, Il Hoo;Lee, Kook Jin
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.285-287
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    • 2016
  • 이황화 몰리브덴(Molybdenum disulfide: $MoS_2$)을 채널(Channel) 물질로 이용하여 metal-oxide-semiconductor(MOS) 구조를 제작하고, 효율적인 제작과정을 제시하였고 특히, Source/Drain의 Doping concentration을 조절하여 효과적인 $MoS_2$ Transistor를 제작 및 시뮬레이션 하였다. 그 후 여러 MOSFET의 특성 분석을 통하여 소자로서의 기능을 확인해보았다. 그리고 특히 채널의 전기적인 특성을 분석하고 채널 내 그리고 contact 사이의 저항 및 mobility의 특성을 알아보았는데, 그 중 Source/Drain Doping Effect와 performance 분석을 통해, 최적화된 $MoS_2$ Transistor를 찾아보았다.

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