• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1A
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• pp.12-17
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• 2009

We consider an OFDM based multiple AF relaying systems. Since the channel between first hop (source station-relay station) and second hop (relay station -destination station) varies independently, the subcarrier in the first hop can be paired to another subcarrier in the second hop for the increase of the system capacity. The conventional pairing which uses the brute force searching requires large complexity while giving optimal pairing for maximum system capacity. In this paper, we present sub-optimal subcarrier pairing scheme with low complexity. Every RS firstly pairs the subcarrier with the highest channel gain in the first hop to the subcarrier with highest channel gain in the second hop. The pair with the highest SNR among all the pairs is determined as final selected pair and the corresponding subcarriers are not selected at other RSs in the next paring iteration. This process is repeated until all the subcarriers are paired. Simulation results show the proposed pairing scheme achieves near optimal performance with low complexity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.6
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• pp.1463-1479
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• 2013

In this paper, we propose an unequal protection physical coding sub-layer (PCS) forward error correction (FEC) scheme for efficient and high-quality transmission of video data over optical access networks. Through identifying and resolving the unequal importance of different video frames and passing this importance information from MAC-layer to PCS, FEC scheme of PCS can be adaptive to application-layer data. Meanwhile, we jointly consider the different channel situations of optical network unit (ONU) and improve the efficiency of FEC redundancy by channel adaptation. We develop a theoretical algorithm and a hardware method to achieve efficient FEC assignment for the proposed unequal protection scheme. The theoretical FEC assignment algorithm is to obtain the optimal FEC redundancy allocation vector that results in the optimum performance index, namely frame error rate, based on the identified differential importance and channel situations. The hardware method aims at providing a realistic technical path with negligible hardware cost increment compared with the traditional FEC scheme. From the simulation results, the proposed Channel and Application-layer data Adaptation Unequal Protection (CAAUP) FEC scheme along with the FEC ratio assignment algorithm and the hardware method illustrates the ability of efficient and high-quality transmission of video data against the random errors in the channel of optical access networks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of Hydrogen and New Energy
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• v.29 no.1
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• pp.105-110
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• 2018

The flow boiling heat transfer of water was experimentally investigated on plain and sintered microporous surfaces in a mini-channel. The effects of microporous coating on flow boiling heat transfer of subcooled water were investigated in a 300 mm long mini-channel with a cross section of $20{\times}10mm^2$. The test section has sufficiently long entrance length of 300 mm which provides a fully-developed flow before the channel inlet. The bottom side of the channel was heated by a copper block assembled with a high-density cartridge heater and other sides of the channel were insulated. The microporous surface was fabricated by sintering copper particles with the average particle size of $50{\mu}m$ on the top side of the copper block. Heat transfer measurement was conducted at the mass flux of $208kg/m^2s$ and the heat flux up to $500kW/m^2$. Microporous coated surface showed an earlier boiling incipience compared with plain surface regardless of the mass flux. Microporous coating were significantly attributed to local wall temperature and local heat transfer coefficient for flow boiling.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.5
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• pp.8-18
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• 2009

CableLAB published DOCSIS 3.0 Specifications to supply broadband access to homes and small businesses. The primary technique of DOCSIS 3.0 Specification is channel bonding which provides cable operators with a flexible way to significantly increase up/downstream speeds. In this paper, we propose the upstream scheduler that serves channel bonding. Proposed scheduler consists of two sub-scheduler: bonding group scheduler and channel scheduler. Also, we propose three scheduling algorithms to allocate request bandwidth of CM to each bonding channel: equivalent scheduling algorithm, current request-based scheduling algorithm, and last grant-based scheduling algorithm. In order to evaluate the performance of these algorithms and DOCSIS 3.0 MAC protocol, we develop the DOCSIS 3.0 simulator with the network simulator, OPNET, to model DOCSIS network, CMTS, and CM. Our results show that equivalent scheduling algorithm is superior to others in the view of transmission delay and throughput and DOCSIS 3.0 protocol provides higher throughput than pre-DOCSIS 3.0 protocol.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.1
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• pp.11-19
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• 2002

This paper gives an optimal step size of E$\sub$b/ /I$\sub$oT/ for outer-loop power control(OLPC) in IMT-2000 system. The performance of outer-loop Power control is affected greatly by the fixed step size according to the channel environments. Conventional methods are inaccurate because they are decided by expert's experiences and the performance is not proved theoretically. In this paper, we show that IMT-2000 system maintains optimal capacity and QoS by the step size of E$\sub$b/ /I$\sub$oT/ obtained from the discrete-time Markov chain model.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1519-1526
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• 2023

For the first time Aluminium-BariumeZinc oxide nanocomposite (ZABONC) was synthesized by solution combustion method where calcination was carried out at low temperatures (600℃) to study the electromagnetic (EM) (X/γ) radiation shielding properties. Further for characterization purpose standard techniques like PXRD, SEM, UV-VISIBLE, FTIR were used to find phase purity, functional groups, surface morphology, and to do structural analysis and energy band gap determination. The PXRD pattern shows (hkl) planes corresponding to spinel cubic phase of ZnAl₂O4, cubic Ba(NO₃)₂, α and γ phase of Al₂O₃ which clearly confirms the formation of complex nano composite. From SEM histogram mean size of nano particles was calculated and is in the order of 17 nm. Wood and Tauc's relation direct energy band gap calculation gives energy gap of 2.9 eV. In addition, EM (X/γ) shielding properties were measured and compared with the theoretical ones using standard procedures (NaI (Tl) detector and multi channel analyzer MCA). For energy above 356 keV the measured shielding parameters agree well with the theory, while below this value slight deviation is observed, due to the influence of atomic/crystallite size of the ZABONC. Hence synthesized ZABONC can be used as a shielding material in EM (X/γ) radiation shielding.

• Advances in nano research
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• v.13 no.6
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• pp.575-585
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• 2022

Due to its biofilm formation and colonization of the osteocyte-lacuno canalicular network (OLCN), Staphylococcus aureus (S.aureus) implant-associated bone infection (SIABI) is difficult to cure thoroughly, and may occur recurrently subsequently after a long period dormant. It is essential to explore an alternative therapeutic strategy that can eradicate the pathogens in the infected foci. To address this, the polymethylmethacrylate (PMMA) bone cement and Fe3O4 nanoparticles compound cylinder were developed as implants based on their size and mechanical properties for the alternative magnetic field (AMF) induced thermal ablation, The PMMA mixed with optimized 2% Fe₃O₄ nanoparticles showed an excellent antibacterial efficacy in vitro. It was evaluated by the CFU, CT scan and histopathological staining on a rabbit 1-stage transtibial screw model. The results showed that on week 7, the CFU of infected soft tissue and implants, and the white blood cells (WBCs) of the PMMA+2% Fe₃O₄+AMF group decreased significantly from their controls (p<0.05). PMMA+2% Fe₃O₄+AMF group did not observe bone resorption, periosteal reaction, and infectious reactive bone formation by CT images. Further histopathological H&E and Gram Staining confirmed there was no obvious inflammatory cell infiltration, neither pathogens residue nor noticeably burn damage around the infected screw channel in the PMMA+2% Fe₃O₄+AMF group. Further investigation of nanoparticle distributions in bone marrow medullary and vital organs of heart, liver, spleen, lung, and kidney. There were no significantly extra Fe₃O₄ nanoparticles were observed in the medullary cavity and all vital organs either. In the current study, PMMA+2% Fe₃O₄+AMF shows promising therapeutic potential for SIABI by providing excellent mechanical support, and promising efficacy of eradicating the residual pathogenic bacteria in bone infected lesions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.