• Title/Summary/Keyword: stress voltage

Search Result 1,073, Processing Time 0.04 seconds

Insulation Characteristics of the Model Cable for 22.9 kV Class HTS Power Cable

  • Kim, Hae-Jong;Seong, Ki-Chul;Cho, Jeon-Wook;Kwag, Dong-Soon;Cheon, Hyeon-Gweon;Kim, Sang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.542-543
    • /
    • 2005
  • In this paper, describes the fabrication and dielectric insulation characteristics experimental results of the model cable for the 22.9kV class HTS power cable. The model cable were tested with partial discharge(PD), AC and impulse withstand voltage in liquid nitrogen($LN_2$) and liquid nitrogen pressure. In these test results, PD inception stress and AC, impulse breakdown strength increase as the pressure of the liquid nitrogen increases.

  • PDF

Zero-Ripple Input Current High Step-Up Boost-SEPIC DC-DC Converter with Low Switch Voltage Stress (입력 전류 리플이 없고 낮은 스위치 전압 스트레스를 갖는 고승압 부스트-세픽 DC-DC 컨버터)

  • Lee, Sin Woo;Do, Hyun Lark
    • Proceedings of the KIPE Conference
    • /
    • 2016.11a
    • /
    • pp.117-118
    • /
    • 2016
  • 본 논문은 입력 전류 리플이 없고 낮은 스위치 전압 스트레스를 갖는 고승압 부스트-세픽 DC-DC 컨버터를 제안한다. 제안된 컨버터는 부스트 단의 보조회로에 의해 입력 전류 리플이 상당히 제거되었으며 세픽 단에 결합 인덕터를 적용하여 높은 전압 이득을 달성하였다. 또한 스위치 전압 스트레스는 클램핑 회로에 의해 감소되었으며 따라서 상대적으로 낮은 $R_{ds(on)}$ 갖는 MOSFET을 사용하여 컨버터의 효율이 개선되었다. 추가적으로 결합 인덕터의 누설 인덕터로 인하여 출력 다이오드의 역회복 손실이 완화되었다. 제안된 컨버터는 이론적 해석과 200[V]-200[W]하드웨어 시작품을 제작하여 검증하였다.

  • PDF

Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance (전력용 MOSFET의 온-상태 저항 측정 및 노화 시험 환경 구축)

  • Shin, Joonho;Shin, Jong-Won
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.27 no.3
    • /
    • pp.206-213
    • /
    • 2022
  • This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

Enhancing Mechanical and Electrical Performance through Polymer Blending: A Study on PVA-PDDA Blended Films for Triboelectric Energy Harvesting

  • Nebiyou Tadesse Debele;Alemtsehay Tesfay Reda;Yong Tae Park
    • Composites Research
    • /
    • v.37 no.2
    • /
    • pp.139-142
    • /
    • 2024
  • This study explores the impact of polymer blending on the mechanical properties and triboelectric energy harvesting capability of composite polymers. A multifunctional free-standing polymer blend composed of poly(vinyl alcohol) (PVA) and poly(diallyldimethylammonium chloride) (PDDA) was fabricated using a polymer casting method. Stress-strain analysis of the polymer blend revealed an enhanced stretchability of 308.4% with excellent transparency. Furthermore, triboelectric analysis revealed dynamic energy harvesting capabilities with impressive electrical voltage and current output of 50 V and 5 μA. These results represent a significant improvement compared to individual PVA and PDDA polymers and highlight the potential of polymer blending to enhance both mechanical and electrical properties for energy harvesting applications.

Ginsenosides Inhibit N-, p-, arid Q-types but not L-type of $Ca^{2+}$ Channel in Bovine Chromaffin cells

  • Seok Chol;Jung, Se-Yeon;Kim, Hyun-Oh;Kim, Hack-Seang;Hyewhon Rhim;Kim, Seok-Chang;Nah, Seung-Yeol
    • Journal of Ginseng Research
    • /
    • v.24 no.1
    • /
    • pp.18-22
    • /
    • 2000
  • In previous reports we have shown that ginsenosides inhibit high threshold voltage-dependent $Ca^{2+}$ channels in neuronal cells. However, these studies did not show whether ginsenosides-induced inhibition of $Ca^{2+}$ currents discriminates among the various $Ca^{2+}$ channel subtypes, although it is known that there are at least five different $Ca^{2+}$ channel subtypes in neuronal cells. In this study we investigated the effect of ginsenosides on high threshold voltage-dependent $Ca^{2+}$ channel subtypes using their selective $Ca^{2+}$ channel blockers nimodipine (L-type), $\omega$-conotoxin GVIA (N-type), or $\omega$-agatoxin IVA (P-type) in bovine chromaffin cells. We could observe that ginsenosides inhibited high threshold voltage-dependent $Ca^{2+}$ currents in a dose-dependent manner. The $IC_{50}$/ was about 120 $\mu$g/ml. Nimodipine had no effect on ginsenosides response. However, the effect of ginsenosides on $Ca^{2+}$ currents was reduced by $\omega$-conotoxin GVIA, $\omega$-agatoxin IVA, and mixture of nimodipine, $\omega$-contoxin GVIA, and $\omega$-agatoxin IVA. These data suggest that ginsenosides are negatively coupled to three types of calcium channels in bovine chromaffin cell, including an $\omega$-conotoxin GVIA-sensitive (N-type) channel, an $\omega$-agatoxin IVA-sensitive (P-type) channel and nimodipine/$\omega$-conotoxin GVIA/$\omega$-agatoxin IVA-resistant (presumptive Q-type) channel.Q-type) channel.

  • PDF

Design of a Reconfigurable Slot Antenna using Sequentially Voltage-Applied RF MEMS Switches (순차적으로 전압 인가된 RF MEMS스위치를 이용한 재구성 슬롯 안테나의 설계)

  • Shim, Joon-Hwan;Yoon, Dong-Sik;Park, Dong-Kook;Kang, In-Ho;Jung-Chih Chiao
    • Journal of Navigation and Port Research
    • /
    • v.28 no.5
    • /
    • pp.429-434
    • /
    • 2004
  • In this paper, we designed a reconfigurable slot antenna using sequentially voltage-applied RF MEMS switches. In order to obtain pull-in voltage and maximum stress of the MEMS switches, the switch structures in accordance with airgap height was analyzed by ANSYS simulation A actuation voltage of MEMS switches can be determined by switch geometry and airgap height between a movable plate and a bottom plate. The designed lengths of MEMS switches were 240 $\mu\textrm{m}$, 320 $\mu\textrm{m}$, 400 $\mu\textrm{m}$, respectively and the airgap was 6$\mu\textrm{m}$. The total size of the designed slot antenna was 10 mm x 10 mm and the slot length and width were 500 $\mu\textrm{m}$ and 200 $\mu\textrm{m}$, respectively. The length and size of the CPW feedline were 5 mm and 30-80-30 $\mu\textrm{m}$, respectively. and then the size of the CPW in the slot was 50-300-150 $\mu\textrm{m}$. The tuning of the resonant frequency of the proposed device is realized by varying the electrical length of the antenna, which is controlled by applying the DC bias voltages to the RF MEMS switches. The designed slot antenna has been simulated, fabricated and measured.

Background $K^+$ channel currents in WEHI-231 cells, immature B lymphocytes

  • Nam, Joo-Hyun;Woo, Ji-Eun;Kim, Tae-Jin;Uhm, Dae-Yong;Kim, Sung-Joon
    • Proceedings of the Korean Biophysical Society Conference
    • /
    • 2003.06a
    • /
    • pp.39-39
    • /
    • 2003
  • In our previous study, WEHI-231, an immature B cell line, showed intractable increase in [C $a^{2+}$]$_{c}$ after the B-cell receptor (BCR) ligation and treatment with 2-aminoethoxydiphenylborate (2-APB), which was never observed in Bal-17, a mature B cell line (Nam et al., 2003, FEBS Lett). In this study, a whole cell voltage clamp study revealed a specific expression of a novel type of $K^{+}$ current, namely voltage-independent background-type $K^{+}$ channels (IK-bg), in WEHI-231 cells. IK-bg was dramatically increase by the application of 2-APB (50 $\square$M), which induced severe hyperpolarization of WEHI-231 from -45 ㎷ to -90 ㎷, When dialyzed with $Mg^{2+}$ and ATP-free pipette solution, a spontaneous development of IK-bg and membrane hyperpolarization were observed. IK-bg was insensitive to classical $K^{+}$ channel blockers (TEA, glibenclamide, $Ba^{2+}$(1 mM)), whereas blocked by quinine and quinidine in a voltage-dependent manner ($IC_{50}$/=6~9 $\square$M at +60㎷). Phorbol myrstate, a PKC activator, decreased the amplitude of IK-bg. Extracellular acidification (pH 6.5) slightly inhibited IK-bg. Arachidonic acid, riluzole, or hyposmotic stress could not affect the IK-bg after the full development by the intracellular dialysis with Mg-ATP-free solution. In a cell-attached mode of single channel recording from WEHI231, we found two types of voltage-independent $K^{+}$ channels with unitary conductance of 300 pS and 120 pS, respectively. Both channels showed very short mean open times and their open probabilities were increase by the application of 2-APB. In Bal-17 cells, no such $K^{+}$ current was observed in 50 cells tested. In summary, WEHI-231 immature B cells express background $K^{+}$ channels. The pharmacological properties and the large unitary conductance suggest that novel types of two-pore domain $K^{+}$ channels (2-P-K channels) might be expressed in WEHI-231, which may provide an intriguing targets of signal transduction in the immature B lymphocytes.e B lymphocytes.

  • PDF

Effects of Seawater & Freshwater Soaking on the Cure Properties of Accelerated Thermally Aged CSPE (가속열화 된 CSPE의 경화특성에 미치는 해수 담수 침지의 영향)

  • Shin, Yong-Deok;Lee, Jeong-U
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.65 no.5
    • /
    • pp.819-824
    • /
    • 2016
  • The accelerated thermal aging of CSPE (chlorosulfonated polyethylene) was carried out for 33.64 and 67.27 days at 110[$^{\circ}C$], equivalent to 40 and 80 years of aging at 50[$^{\circ}C$], respectively. These samples were referred to as CSPE-0y, CSPE-40y and CSPE-80y, respectively. As the accelerated thermally aged years of the CSPE increase, the insulation resistance[$\Omega$] at 20[Hz], 500[Hz], and 2[KHz], and the percent elongation [%EL] of the CSPE decrease. However, the dissipation factor($tan{\delta}$) at 20[Hz], 500[Hz], and 2[KHz], the apparent density[$g/cm^3$], the glass transition temperature and the melting temperature of the CSPE were increased. The period of time that the voltage has to be applied until electric breakdown of the CSPE-0y is longer than that of the CSPE-40y, and the CSPE-80y, but the dielectric strength of the CSPE-80y is lower than that of the CSPE-0y and the CSPE-40y. The differential temperatures after the AC and DC voltages are applied to CSPE-0y, CSPE-40y and CSPE-80y are 0.026~0.028[$^{\circ}C$], 0.030~0.042[$^{\circ}C$], 0.018~0.045[$^{\circ}C$], respectively. The variations of temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE-0y, CSPE-40y and CSPE-80y. It is found that the dielectric loss owing to the dissipation factor[$tan{\delta}$] is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the separation of the branch chain of CSPE polymer from the main chain of the polyethylene as a result of thermal stress due to accelerated thermal aging as well as by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$ after seawater soaking.

Configuration of Test Field for Introduction of IEC 60364-4-44 to Domestic System (IEC 60364-4-44의 국내 도입을 위한 실증시험장 구성)

  • Nam, Kee-Young;Choi, Sang-Bong;Jeong, Seong-Whan;Lee, Jae-Duck;Ryoo, Hee-Suk;Kim, Dae-Kyeong;Jung, Dong-Hak
    • Proceedings of the KIEE Conference
    • /
    • 2007.07a
    • /
    • pp.731-732
    • /
    • 2007
  • This paper presents the final configuration of test field and test items for the application of IEC 60364-4-44 in Korea. IEC 60364-4-44 provides rules for the protection against the effects of conducted and radiated disturbances on electrical installations. Especially this standard deals with the protection of low voltage facility against the ground fault in the high voltage side of power distribution system. Many countries define the regulations on the use of electrical facilities based on their own power system and technical references which are considered to be suitable for them. The background of circuit of IEC 60364-4-44 is based on the ungrounded system as most of European countries. However, domestic electric power distribution system is based on multi-grounding system different from European system. Therefore, it is necessary to evaluate or prove the effect of the IEC 60364-4-44 for introducing and applying it to the domestic grounding system as a national standard. The authors with KEA(Korea Electric Association) carried out a project on the application of IEC 60364-4-44 to Korean electrical installations of buildings sponsored by Korean ministry of commerce, industry and energy for three years(2004.4.1$\sim$2007.3.31). The test field is established in K.E.R.I.(Korea Electrotechnology Research Institute), which is the purpose of evaluating the formula to calculate touch voltage and stress voltage in the IEC standards. This paper presents some considerations and final configuration of test field to evaluate and introduce the IEC 60364-4-44 applicable to domestic rule for the protection against ground fault.

  • PDF

Glass strengthening and coloring using PIIID technology

  • Han, Seung-Hee;An, Se-Hoon;Lee, Geun-Hyuk;Jang, Seong-Woo;Whang, Se-Hoon;Yoon, Jung-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.178-178
    • /
    • 2016
  • Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

  • PDF