• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.6
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• pp.38-43
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• 2007

In this paper, a study is described on finding a relationship between discomfort and body pressure distribution. In the first step, experiments were conducted to find correlation between pressure distribution and discomfort. The experiments of 12 people on 9 seats were performed. In the second step, parameters and correlation coefficients were determined between the measured body pressure distribution and median values of the subjective evaluations of 12 subjects using psychophysical power law.

• Tribology and Lubricants
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• v.11 no.2
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• pp.15-23
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• 1995

A zero-load slider is composed of two outside rails which produce a lift force pushing up the slider from the disk surface and a wide reverse step region which produces a suction force attracting the slider to the disk surface. In this paper, the flying characteristics of zero-load sliders are obtained by using an optimization technique. In the pressure calculation module, the FIFD scheme is used to solve the modified Reynolds equation. The BFGS method and a line search algorithm is employed to predict the static flying attitude. To investigate the effect of the geometric- parameters of zero-load sliders on the flying characteristics, recess depth, front step width, rail width, and taper height are varied and the corresponding flying attitudes are obtained. Simulation results demonstrate that recess depth and rail width have significant influences on the flying characteristics.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.9
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• pp.799-806
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• 2007

Direct Numerical Simulation was carried out to predict mass transfer in turbulent flow around a rotating stepped cylinder. This investigation is a follow-up study of DNS of turbulent flow in Nesic et al. [Corrosion, Vol. 56, No. 10, pp. 1005 - 1014] The original motivation of this work stemmed from the efforts to design a simple device which can generate flows of high turbulence intensity at low cost for corrosion researchers. Two cases were considered; Sc=1 and 10 both at Re=335. Here, Sc and Re stand for Schmidt number and Reynolds number, respectively, based on the step height and the surface speed of the cylinder upstream of the step. Main focus was placed on the correlation between turbulence and mass transfer. The spatio-temporal evolution of concentration field is discussed. The numerical results are qualitatively compared with those of the experiment conducted with a similar flow configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.798-802
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• 2005

The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. In this paper, the bubble flow from the wafer surface during plating process was studied and we designed the tilted electrode ring to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and $\alpha-step$. In a-step measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were $\pm16.6\%,\;\pm4\%$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.31-35
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• 2000

A cantilever deflection measurement system for AFM(atomic force microscope) was constructed by the laser deflection method using LEP type PSD. Design process including sensitivity analysis was presented and the performance of the system was demonstrated by several experiments using a sample specimen with 50nm-step on the surface. The measured displacement-amplification-factor showed good agreement with the expected one with about 8% deviation. The step height measurement data were compared to what were acquired by commercial AFM, and the result showed that there were about 5nm-deviation between the two data. These results satisfies our expectation in the stage of system design.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.9
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• pp.1327-1334
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• 2003

Flow characteristics of the fluid laden with many particles in the two-dimensional channel are investigated using the Navier-Stokes equations coupled with the equation of motion of particles by direct numerical simulation. A four-step fractional step method with Crank-Nicolson scheme and ALE technique is used for P2P1 mixed finite element method. The motion and distribution of particles in the fluid is virtually described as a result of direct numerical simulation and the increase of viscosity is compared with theoretical equations. The effect of channel height on the relative viscosity and the tubular pinch effect are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• Transactions of Materials Processing
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• v.4 no.4
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• pp.302-321
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• 1995

A method of determining an optimum blank shape for the non-circular deep drawing process is investigated. The rigid-plastic finite element method is introduced and the computer program code is developed. The ideal shape of a drawn cup with uniform wall height is assumed and metal flow is traced back-ward step by step to predict an initial blank shape of the ideal cup. For examples of the non-circular deep drawing products, three cases of drawn cup with quadrilateral punch shape are considered and optimum blank shapes for each case are proposed and compared with experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.125-125
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• 2012

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).