• 제어로봇시스템학회논문지
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• 제22권9호
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• pp.710-715
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• 2016

Due to its simplicity and high reliability, the box-counting(BC) method is one of the most frequently used techniques to estimate the fractal dimensions of a binary image with a self-similarity property. The fractal calculation requires data sampling that determines the size of boxes to be sampled from the given image and directly affects the accuracy of the fractal dimension estimation. There are three non-overlapping regular grid methods: geometric-step method, arithmetic-step method and divisor-step method. These methods have some drawbacks when the image size M becomes large. This paper presents a BC algorithm for enhancing the accuracy of the fractal dimension estimation based on a new sampling method. Instead of using the geometric-step method, the new sampling method, called the coverage ratio-step method, selects the number of steps according to the coverage ratio. A set of experiments using well-known fractal images showed that the proposed method outperforms the existing BC method and the triangular BC method.

• 대한전자공학회논문지
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• 제19권6호
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• pp.91-95
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• 1982

LSI나 VLSI 소자의 제조 공정중 금속막이 기존의 스텝 커버리지를 좋게 하는 것은 매우 중요한 일이다. 본 인구에서 얻어진 방법은 8.0∼8.6wt.%의 인을 고함하는 PCG를 증기 (steam) 분위기의 950℃에서 30분간 열처리한 후 250℃에서 1 um의 악루미늄을 증착하는 것이다. One significant problem which arises during the fabrication of LSI and/or VLSI is how to make a good step coverage for aluminum. One way developed in this study is to flow PSG containing 8.0 wt.% - 8.6 wt.% of phosphorus at 950℃ for 30 minutes in steam and to depo3it aluminum of 1 urn thickness at 250℃.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.231-231
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• 2010

현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

• 한국표면공학회지
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• 제47권2호
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• pp.68-74
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• 2014

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si/$SiO_2$/Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.155-157
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• 1991

This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

• Journal of Periodontal and Implant Science
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• 제42권3호
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• pp.105-109
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• 2012

Purpose: Soft tissue recessions frequently cause esthetic disharmony and dissatisfaction. Compared with soft tissue coverage around a tooth, the coverage of an implant site is obviously unpredictable. Particularly in the cases of thin mucosa, a significant greater amount of recession takes place compared to thick mucosa. To overcome this problem, this case report demonstrates a two-step mucosal dehiscence coverage technique for an endosseous implant. Methods: A 33-year-old female visited us with the chief complaint of dissatisfaction with the esthetics of an exposed implant in the maxillary left cental incisor region. A partial-thickness pouch was constructed around the dehiscence. A subepithelial connective tissue graft was positioned in the apical site of the implant and covered by a mucosal flap with normal tension. At 12 months after surgery, the recipient site was partially covered by keratinized mucosa. However, the buccal interdental papilla between implant on maxillary left central incisor region and adjacent lateral incisor was concave in shape. To resolve the mucosal recession after the first graft, a second graft was performed with the same technique. Results: An esthetically satisfactory result was achieved and the marginal soft tissue level was stable 9 months after the second graft. Conclusions: The second graft was able to resolve the mucosal recession after first graft. This two-step approach has the potential to improve the certainty of esthetic results.

• 한국멀티미디어학회논문지
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• 제24권3호
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• pp.431-439
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• 2021

Since the sensor nodes are randomly arranged in the region of interest, it may happen that the sensor network area is separated or there is no sensor node in some area. In addition, after the sensor nodes are deployed in the sensor network, a coverage hole may occur due to the exhaustion of energy or physical destruction of the sensor nodes. The coverage hole can greatly affect the overall performance of the sensor network, such as reducing the data reliability of the sensor network, changing the network topology, disconnecting the data link, and worsening the transmission load. Therefore, sensor network coverage hole recovery has been studied. Existing coverage hole recovery studies present very complex geometric methods and procedures in the two-step process of finding a coverage hole and recovering a coverage hole. This study proposes a method for discovering and recovering a coverage hole in a sensor network, discovering that the sensor node is a boundary node by itself, and determining the location of a mobile node to be added. The proposed method is expected to have better efficiency in terms of complexity and message transmission compared to previous methods.

• 대한심미치과학회지
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• 제1권1호
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• pp.29-33
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• 1992

• 한국군사과학기술학회지
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• 제20권5호
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• pp.688-699
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• 2017

Model-based test, a well-known method of the black box tests, is consisted of the following four steps : model construction using requirement, test case generation from the model, execution of a SUT (software under test) and detection failures. Among models constructed in the first step, state-based models such as UML standard State Machine are commonly used to design event-based embedded systems (e.g., weapon control systems). To generate test cases from state-based models in the next step, coverage-based techniques such as state coverage and transition coverage are used. Round-trip path coverage technique using W-Method, one of coverage-based techniques, is known as more effective method than others. However it has a limitation of low failure observability because the W-Method technique terminates a testing process when arrivals meet states already visited and it is hard to decide the current state is completely same or not with the previous in the case like the GUI environment. In other words, there can exist unrevealed faults. Therefore, this study suggests a Extended W-Method. The Extended W-Method extends the round-trip path to a final state to improve failure observability. In this paper, we compare effectiveness and efficiency with requirement-item-based technique, W-Method and our Extended W-Method. The result shows that our technique can detect five and two more faults respectively and has the performance of 28 % and 42 % higher failure detection probability than the requirement-item-based and W-Method techniques, respectively.

• 한국진공학회지
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• 제1권1호
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• pp.78-82
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• 1992

W(123) 표면위에 수소와 중소수가 흡착될 때 일함수의 변화를 장방출(Field Fmission) 방법으로 측정하였다. 78K에서 이 분자들이 흡착될 때 일함수의 변화는 처음에 는 증가하다가 최대치에 이른 후 감소하였고, 덮임율(coverage)이 증가함에 따라 포화되었 다. 텅스텐 tip의 온도를 200K까지 올렸을 경우에, 일함수의 변화가 최대가 되었을 때의 덮 임율은 78K일 때의 비해 낮은 덮임율 쪽으로 이동하였고, [011] 방향을 갖는 step 혹은 terrace에 의한 일함수의 효과도 동시에 관측되었다.