• 센서학회지
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• 제13권2호
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• 한국결정성장학회지
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• 제17권5호
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• pp.179-186
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• 2007

[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다.

• 센서학회지
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• 제10권6호
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• pp.328-337
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• 2001

수평 전기로에서 $CdGa_2Se_4$ 다결정을 합성하여 HWE 방법으로 $CdGa_2Se_4$ 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. $CdGa_2Se_4$ 단결정 박막은 증발원과 기판의 온도를 각각 $630^{\circ}C$, $420^{\circ}C$로 성장하였다. 10K에서 측정한 광발광 exciton 스펙트럼과 이중결정 X-선 요동곡선(DCRC)의 반치폭(FWHM)을 분석하여 단결정 박막의 최적 성장 조건을 얻었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $8.27{\times}10^{17}/cm^3$, $345\;cm^2/V{\cdot}s$였다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐(splitting)에 의해서 측정된 ${\Delta}Cr$ (crystal field splitting)은 106.5 meV, ${\Delta}So$ (spin orbit splitting)는 418.9 meV였다. 10K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 주개 bound exciton등의 피크가 관찰되었다. 이때 중성 주개 bound exciton의 반치폭과 결합 에너지는 각각 8 meV와 13.7 meV였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 137 meV 였다.

• 센서학회지
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• 제23권2호
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 한국자기학회지
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• 제15권5호
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• pp.261-264
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• 2005

띠 Jahn-Teller 효과를 기반으로 $Th_{3}P_4$형 구조 화합물인 $La_{3}S_4$와 $Ce_{3}S_4$의 탄성상수 $C'=(C_{11}-C_{12})/2$의 차이점을 연구하였다. 같은 구조를 갖는 두 화합물간의 유일한 차이점은 $Ce_{3}S_4$에는 자기적인 성질을 가진 f 전자가 존재한다는 것이다. 입방 결정장에 의해 둘로 갈라져 있는 $Ce^{3+}$ 이온의 f 전자 에너지 상태가 띠 Jahn-Teller 효과에 의한 탄성유화 현상에 미치는 영향을 조사하고, f 전자가 탄성유화를 억제하는 것을 보였다. 또한, 탄성상수의 계산을 통하여 얻어진 $Ce^{3+}$ 이온의 에너지 갈라짐 값이 자기 감수율의 측정에 의해 얻어진 실험치에 근접함을 확인하였다.

• 콘크리트학회논문집
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• 제19권6호
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• pp.745-754
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• 2007

이 논문은 철근콘크리트 구조 부재의 인장증강효과에 대한 해석적 모델을 제안한 것이다. 이 모델의 정식화를 위해 철근과 콘크리트 경계면에서 발생하는 실제와 유사한 형태의 부착응력과 미끌림 특성과 쪼갬균열의 영향을 고려하였다. 균열 안정화 단계에서의 철근 경계면 미끌림 분포를 선형으로 가정하고, 균열이 발생한 부재의 중앙 단면에서 콘크리트의 분담력이 일정하다는 조건을 CEB-FIP Model Code 1990 및 Eurocode 2에서 제시하고 있는 부착응력-미끌림 관계에 적용하였다. 이로부터 균열 안정화단계에서 부착응력에 의해 철근의 매입길이 방향으로 변화하는 철근의 변형률과 콘크리트 분담력을 계산할 수 있는 평형방정식을 유도하고, 변형적합조건을 고려하여 철근의 평균 변형률과 콘크리트 평균 분담력으로 동시에 표현이 가능한 인장강성 계수를 제안하였다. 이로부터 새롭게 정식화된 인장증강효과 모델을 기존 문헌에 발표된 여러 연구자들의 실험 자료에 적용하여 그 정확성을 검증한 결과, 제안식에 의한 예측값은 실험값을 비교적 정확하게 예측하는 것으로 나타났다.

• 한국재료학회지
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• 제28권4호
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• pp.214-220
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• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

• 한국수소및신에너지학회논문집
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• 제19권6호
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• pp.505-513
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• 2008

The two-step thermochemical cycle was examined on the $CeO_2$, YSZ, and $ZrO_2$-supported $NiFe_2O_4$ to investigate the effects of support material addition. The supported $NiFe_2O_4$ was prepared by the aerial oxidation method. Thermal reduction was conducted at 1573K and 1523K while water-splitting was carried out at 1073K. Supporting $NiFe_2O_4$ on $CeO_2$, YSZ and $ZrO_2$ alleviated the high-temperature sintering of iron-oxide. As a result, the supported $NiFe_2O_4$ exhibited greater reactivity and repeatability in the water-splitting cycle as compared to the unsupported $NiFe_2O_4$. Especially, $ZrO_2$-supported $NiFe_2O_4$ showed better sintering inhibition effect than other supporting materials, but hydrogen production amount was decreased as cycle repeated. In case of $CeO_2$-supported $NiFe_2O_4$, improvement of hydrogen production was found when the thermal reduction was conducted at 1573K. It was deduced that redox reaction of $CeO_2$ activated above 1573K.

• 멤브레인
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• 제13권1호
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• pp.54-63
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• 2003

피리디니움 (pyridunium) 그룹을 포함한 음이온교환막의 제조 및 전기화학적 특성 평가를 수행하였다. 실험 결과, 제조된 피리디니움 음이온교환막은 상용막과 대등한 전기저항 ($3.0 {\Xi}cm^2$>, in 0.5 mol $dm^{-3}$ NaCl) 및 높은 이온선택도 ($Cl^-$ 이온수송수 약 0.97)의 우수한 전기화학적 특성을 나타내었다. 또한 피리니디움 그룹을 함유한 음이온교환막에서의 물분해는 상용막 (AM-1, Tokuyama Corp., Japan)에 비해 동일한 전류밀도 하에서 약 100배 내지 1000배 가량 낮게 측정되었는데 이는 4차 아로마틱 피리디니움 그룹의 공명효과 (resonance effect)가 이온교환기의 분자구조적 안정성에 영향을 미쳤기 때문으로 사료되었다. 또한 피리디니움 음이온교환막의 전기투석 특성이 semi-pilot 스케일에서 평가되었다.

• 대한기계학회논문집A
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• 제29권10호
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• pp.1289-1297
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• 2005

The flow in a microchannel is usually characterized as a low Reynolds number (Re) so that good mixing is quite difficult to be achieved. In this regard, we developed a novel chaotic micromixer, named Serpentine Laminating Micromixer (SLM) in the present study, Part 1. In the SLM, the higher level of chaotic mixing can be achieved by combining two general chaotic mixing mechanisms: splitting/recombination and chaotic advection. The splitting and recombination (in other term, lamination) mechanism is obtained by the successive arrangement of 'F'-shape mixing units in two layers. The chaotic advection is induced by the overall three-dimensional serpentine path of the microchannel. Chaotic mixing performance of the SLM was fully characterized numerically. To compare the mixing performance, a T-type micromixer which has the same width, height and length of the SLM was also designed. The three-dimensional numerical mixing simulations show the superiority of the SLM over the T-type micromixer. From the cross-sectional simulation results of mixing patterns, the chaotic advection effect from the serpentine channel path design acts favorably to realize the ideal lamination of fluid flow as Re increases. Chaotic mixing mechanism, proposed in this study, could be easily integrated in Micro-Total-Analysis-System, Lab-on-a-Chip and so on.