• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.39-44
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• 2016

Determination of the structural, electronic, and magnetic properties of the magnetically doped bismuth-telluride alloys are drawing lots of interest in the fields of the thermoelectric application as well as the research on magnetic interaction and topological insulator. In this study, we performed the first-principles electronic structure calculations within the density functional theory for the Gd doped bismuth-tellurides in order to study its magnetic properties and magnetic phase stability. All-electron FLAPW (full-potential linearized augmented plane-wave) method is employed and the exchange correlation potentials of electrons are treated within the generalized gradient approximation. In order to describe the localized f-electrons of Gd properly, the Hubbard +U term and the spin-orbit coupling of the valence electrons are included in the second variational way. The results show that while the Gd bulk prefers a ferromagnetic phase, the total energy differences between the ferromagnetic and the antiferromagnetic phases of the Gd doped bismuth-telluride alloys are about ~1meV/Gd, indicating that the stable magnetic phase may be changed sensitively depending on the structural change such as defects or strains.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.3
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• pp.185-191
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• 2005

Photo-reactive $TiO_2$ thin films on soda-lime-silica slide glass were prepared by spin coating technique with a Ti-naphthenate precursor. Optical, structural and photo-catalytic properties of the films after annealing at $500^{\circ}C{\sim}600^{\circ}C$ were evaluated. As increase with annealing temperature, absorption bands and total transmittance of the films showing an average transmittance (about 80%) at visible spectra range were shifted to UV spectra range and slightly decreased. Refractive index and thickness of the films were increased from 2.16 to 2.63 and decreased from 484 nm to 439 nm, respectively, with increase of annealing temperature. Anatase phase was visible at all annealing temperature. More rougher surface structure was obtained at $600^{\circ}C$ than those of films annealed at $500^{\circ}C$ and $550^{\circ}C$. The hydrophilic conversion was found within 45 min by UV stimulation and optical activation was UVC>UVA>UVB at the case of $500^{\circ}C{\sim}550^{\circ}C$ and UVA>UVC>UVB at the annealing temperature of $600^{\circ}C$. The lowest initial contact angle was obtained at $600^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of the Korean Magnetics Society
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• v.19 no.2
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• pp.52-56
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• 2009

Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.105-110
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• 2014

It is required to improve the efficiency and the reliability of the polymer solar cells (PSCs) as the energy saving optical device for the future application of the smart farm facilities. In this study, we fabricated the bulk hetero junction PSCs with organic passivation film layer for the reliability improvement of the devices. The effects of the passivation layer on the electrical properties of the PSCs were studied. The materials of passivation layer are composed of poly vinyl alcohol (PVA) and ammonium dichromate, and the passivation films were fabricated by the spin coating method on the P3HT:$PC_{61}BM$/LiF/Al substrate. The prepared structure of the device is the glass/ITO/PEDOT:PSS/P3HT:$PC_{61}BM$/LiF/Al/passivation layer. The performances of the PSCs with the organic passivation film showed better electrical properties compared with the PSCs without passivation layers. The power conversion efficiency (PCE) values of passivated PSCs decreased from 3.0 to 1.3% after air exposure for 140 hrs. In contrast, the PCE values for the devices without passivation decreased sharply from 3.5 to 0.1% under the same exposure condition.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.393-400
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• 2012

In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.