• 한국세라믹학회지
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• 제30권1호
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• pp.17-24
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• 1993

Sol-gel spin-coating technique was used to produce Nb2O5 thin films on silicon substrates from Nb(OC2H5)5 precursor. The films were heat-treated at temperatures between $600^{\circ}C$ and 100$0^{\circ}C$ in oxygen atmosphere and their crystalline phases, chemical states, and dielectric characteristics were investigated by X-ray diffractometry (XRD), Auger electron spectroscopy (AES), and C-V measurements, respectively. After 1 hour heat-treatment at 80$0^{\circ}C$, T-type Nb2O5 was formed, and its chemical composition was homogeneous with no appreciable SiO2 oxide at interfaces between the films and substrates. The films heat-treated at temperatures between $600^{\circ}C$ and 80$0^{\circ}C$ exhibit dielectric constant of less than 20 while the films heat treated at 100$0^{\circ}C$ show dielectric constant of 28.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.187-191
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• 1995

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.247-250
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• 한국진공학회지
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• 제6권2호
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• pp.103-108
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• 1997

본 연구에서는 2단계 실리콘 건식식각 공정과 게이트 절연막으로 열산화막과 tetraethylorthosilicate(TEOS) 산화막의 이중막을 사용하고, 스핀-온-그래스 (Spin-on-glass:SOG) 에치백(etch-back) 공정에 의하여 게이트를 제작하는 새로운 방법을 통하여 실리콘 전계방출소자를 제작하고 그 특성을 분석하였다. 게이트 절연막의 누설전류 를 감소시키면서 팁과 게이트의 간격을 줄이는 구조인 이중 게이트 절연막을 형성하기 위하 여 팁 첨예화 산화 공정후 낮은 점도의 감광막(photo resist)을 시료에 도포한 후, $O_2$ 플라 즈마 에싱(ashing)하는 공정을 채택하였다. 이러한 공정으로 제작된 에미터 팁의 높이와 팁 반경은 각각 1.1$\mu\textrm{m}$와 100$\AA$정도이었으며, 256개 팁 어레이에서 전계방출의 문턱전압은 40V 이하이었다. 60V의 게이트전압에서 23$\mu\textrm{A}$(즉, 90nA/팁)의 높은 아노드 전류를 얻을 수 있었 다. 이때, 게이트 전류는 아노드전류의 약0.1%이하였다. 개발된 공정기술로 게이트 개구도 크게 감소시켰을 뿐 아니라, 게이트 누설전류를 현저히 감소시켰다.

• 대한전자공학회논문지
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• 제19권5호
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• pp.5-11
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• 1982

슬라이드 글라스와 위에 1μm 가량의 산화막을 입힌 실리콘 웨이퍼 위에, 폴리우레탄이나 에폭시 등의 유기 물질을 스핀너 (spinner)로 코우팅시켜서 평판형 유전체 도파관(dielectric slab waveguide)을 제작하고, 프리즘으로 빛을 커플링 (coupling) 시켜서 광도파 현상을 화인했다. 실리콘 웨이퍼나 슬라이드 글라스 위에다 알루미늄이나 은(Ag)을 진공증착시킨 것을 기관으로 사용하여 금각판 도파관(metal clad waveguide)을 제작하고, 프리즘 2개로 커플링 (coupling), 디커플링 (decoupling)시켜서 모우드 라인(mode line)을 관찰했다. 포토리지스트 K. P. R.의 굴절율이 폴리우레탄의 굴절율보다 큰 점을 이용하여 2층 구조의 박막 프리즘을 제작하고 빛이 꺾이는 현상을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.467-469
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• 2001

KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.43-46
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• 2000

In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$TiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Structure and electrical characteristics of specimen was analyzed by Fractal Process. Thickness of BST ceramics thin films are about 2800[$\AA$]. Dielectric constant and loss of thin films was little decreased at 1[kHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the relation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].