• Title/Summary/Keyword: spin valves

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Switching behavior in Peramlloy/Niobium/Permalloy trilayer

  • Hwang, Tae-Jong;Kim, Dong Ho
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.4
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    • pp.17-20
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    • 2014
  • We have investigated the effect of temperature and bias current on the stability of the inverse spin-switch effect in Permalloy(Py)/Nb/Permalloy pseudo spin-valves. The inverse spin-switch operates between two orientations of the ferromagnetic moments of Py layers; parallel (ON) and antiparallel-domain (OFF) state. Measuring time scans of the resistance changes between the ON and OFF state, ${\Delta}R_{ON-OFF}$, while alternating magnetic fields between the two states at various temperatures and bias currents, revealed that enhancement of ${\Delta}R_{ON-OFF}$ is a key factor to achieve successful operation of superconducting spin switch.

Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

  • Hwang, Tae Jong;Kim, Dong Ho
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.3
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    • pp.23-26
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    • 2017
  • We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices

  • Nguyen Hoang Yen Thi;Yi, Hyun-Jung;Shin, Kyung-Ho
    • Journal of Magnetics
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    • v.12 no.1
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    • pp.12-16
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    • 2007
  • Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.