• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.62-66
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• 2000

Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

• Journal of Magnetics
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• v.11 no.3
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• pp.115-118
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• 2006

Co-ferrite nanoparticles have been synthesized by the decomposition of iron(III) acetylacetonate, $Fe(acac)_3$ and Co acetylacetonate, $Co(acac)_2$ in benzyl/phenyl ether in the presence of oleic acid and oleyl amine at the refluxingtemperature of $295^{\circ}C$/$265^{\circ}C$ for 30 min. before cooling to room temperature. Particle diameter detected by PSA can be turned from 4 nm to 20 nm by seed-mediated growth and reaction conditions. Structural and magneticcharacterization of Co-ferrite were measured by use of HRTEM, SAED (selected area electron diffraction), XRD and SQUID. The as-synthesized Co-ferrite nanoparticles have a cubic spinel structure and coercivity of 20 nm $CoFe_{2}O_{4} nanoparticles reached 1 kOe at room temperature and 18 kOe at 10 K.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.141-145
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• 2001

The Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ exchange bias layers (EBLs), which have a small amounts of Pt, exhibit a high value of H$\_$ex/. The Si/Ni-Fe/Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBL shows the largest H$\_$ex/ of 187 Oe, which is equivalent to a exchange energy (J$\_$ex/) of 0.146 erg/cm$^2$. Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBLS are estimated to have blocking temperature of about 250 $\^{C}$, which is higher than those of Mn-Ir EBLs and Mn-Ir-Pt EBLs with higher Pt contents. This result implies that a little addition of Pt element promotes thermal stability in the Mn-Ir-Pt EBLs. The chemical stability of Mn-Ir-Pt EBLs was characterized by potentiodynamic test, which was performed in 0.001 M NaCl solution. The current density of Mn-Ir-Pt films was gradually reduced with increasing Pt content. The present results indicate that the Mn-Ir-Pt with a small amount of Pt is suitable for an antiferromagnetic material for a reliable spin valve giant magnetoresistance device.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.89-93
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• 2010

We study the giant magneto-resistance (GMR), coercivity and their dependence on the ferromagnetic layers adjacent to the nonmagnetic layer in a spin-valve structure, [Pd/ferromagnetic] multilayers with perpendicular anisotropy. We fabricated a basic spinvalve structure of $[Pd/Co]_2$/ferro-magnetic layer/nonmagnet/ferro-magnetic layer/$[Pd/Co]_2$/FeMn and investigated the dependence of its GMR and magnetic properties such ad coercivity on the ferromagnetic material to reduce the coercivity of the free layer. We try to reduce the freelayer coercivity by controlled the anisotropy, we insert the material NiFe, $Co_8Fe_2$, $Co_9Fe_1$ to ferromagnetic layers adjacent to the Cu layer. Then, we have been able to reduce the coercivity as low as 100 Oe, and also achieved 6.7% of magneto-resistance ratio when the ferromagnetic layer thickness was 0,7 nm.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.173-177
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• 2012

The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.362-368
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• 1998

The magnetic properties, thermal stability and anti-corrosion properties of $Cr_86Al_14$ spin valves multilayers were studied. It was found that the magnetic properties of $Cr_86Al_14$ spin valves depend on the thickness of antiferromagnetic, ferromagnetic and non-ferromagnetic layers. Exchange coupled field ($H_{ex}$) and magnetoresistance ratio (%) showed the largest value of 20 Oe, 2 % in $glass/Cr_{86}Al_{14}(600 $\AA$)/Ni_{81}Fe_{19}(50$\AA$)/Cu(40 $\AA$)/Ni_{81}Fe_{19}(40 $\AA$)$ spin valves. The $H_{ex}$ MR ratios (%) of CrAl and FeMn spin valves were decreased with increasing annealing temperatures and were lost at 150 $^{\circ}C$, 250 $^{\circ}C$ respectively. Based on these result, it was elucidated that CrAl is more thermally stable than FeMn. It was also shown that there was no change of $H_{ex}$ MR ratios in CrAl, while FeMn was changed and lost 15 days later in corrosion resistance test under 35 $^{\circ}C$, 90 % humidity condition. FeMn was found to be pitted and peeled off 15 days later by SEM micrographic analysis.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.219-219
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.30-31
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• 2002

100 Gbit/in$^2$ 이상의 자기기록밀도를 달성하기 위해서는 재생헤드로 사용되고 있는 스핀밸브의 자기저항비가 10% 이상을 가지면서 열적 특성이 우수해야 한다. 현재까지 연구되어진 스핀밸브 구조 중 NiO([,2,3], $\alpha$-Fe$_2$O$_3$[4]등의 산화물 반강자성 층을 사용한 스핀밸브의 경우 기본 스핀밸브 구조를 사용하고도 이미 20% 이상의 자기저항비를 달성하였다. 이러한 높은 자기저항비는 절연층인 산화물 반강자성층과 금속 자성층 계면에서 일어나는 전자의 스펙큘라 반사(specular reflection)로부터 기인한다고 보고하고 있다.[2] (중략)